Dielectric thin film on electrodes for resistance change memory devices

Patent metadata

Field	Value
Publication number	US-9287498-B2
Application number	US-201113993302-A
Country	US
Kind code	B2
Filing date	Sep 14, 2011
Priority date	Sep 14, 2011
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. An apparatus comprising:
a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material and having a first surface and a second surface that is disposed opposite to the first surface;
a first electrode having a first electrically conductive material, the first electrode having a first surface that is directly coupled with the first surface of the storage structure;
a dielectric film consisting of a single layer of a dielectric material, wherein the dielectric film has a thickness of less than 0.7 nanometers, wherein the dielectric film is directly coupled with a second surface of the first electrode that is disposed opposite to the first surface of the first electrode, and wherein the dielectric film includes a ceramic selected from the group consisting of titanium oxide (TiO 2 ) magnesium oxide (MgO), tungsten oxide (WO), and tantalum oxide (Ta 2 O 5 ); and
a second electrode having a second electrically conductive material, the second electrode being directly coupled with the second surface of the storage structure.

2. The apparatus of claim 1 , further comprising:
a third electrode having a third electrically conductive material, the third electrode being directly coupled with the dielectric film such that the dielectric film is disposed between the first electrode and the third electrode.

3. The apparatus of claim 2 , wherein the second electrically conductive material and the third electrically conductive material are a same material.

4. The apparatus of claim 2 , wherein the dielectric film is a first dielectric film having a first dielectric material, the apparatus further comprising:
a second dielectric film having a second dielectric material, the second dielectric film being directly coupled with the second electrode.

5. The apparatus of claim 4 , further comprising:
a fourth electrode having a fourth electrically conductive material, the fourth electrode being directly coupled with the second dielectric film such that the second dielectric film is disposed between the second electrode and the fourth electrode.

6. The apparatus of claim 1 , wherein the dielectric film is a first dielectric film having a first dielectric material and the storage structure includes a first surface that is directly coupled with the first electrode, the apparatus further comprising:
a second dielectric film having a second dielectric material, the second dielectric film being directly coupled with a second surface of the storage structure that is disposed opposite to the first surface of the storage structure.

7. The apparatus of claim 1 , wherein the first electrically conductive material and the second electrically conductive material includes tungsten, TiN, TiSiN, doped silicon, doped germanium, or carbon.

8. The apparatus of claim 1 , further comprising:
a word-line or a bit-line, wherein the electrode is an intervening structure between the storage structure and the word-line or the bit-line and the dielectric film is part of an electrical pathway between the word-line or the bit-line and the storage structure.

9. A system comprising:
a processor; and
a phase change memory (PCM) device coupled to the processor, the PCM device including:
a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material and having a first surface and a second surface that is disposed opposite to the first surface;
a first electrode having a first electrically conductive material, the first electrode having a first surface that is directly coupled with the first surface of the storage structure;
a dielectric film consisting of a single layer of a dielectric material with a thickness of less than 0.7 nanometers, wherein the dielectric film is directly coupled with a second surface of the first electrode that is disposed opposite to the first surface of the first electrode, and wherein the dielectric film includes a ceramic selected from the group consisting of titanium oxide (TiO 2 ), magnesium oxide (MgO), tungsten oxide (WO), and tantalum oxide (Ta 2 O 5 ); and

a second electrode having a second electrically conductive material, the second electrode being directly coupled with the second surface of the storage structure.

10. The system of claim 9 , wherein:
the PCM device is a phase change memory and switch (PCMS) device; and
the storage structure is a storage element of the PCMS device.

11. An apparatus comprising:
a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material and having a first surface and a second surface that is disposed opposite to the first surface;
a first electrode having a first electrically conductive material, the first electrode having a first surface that is directly coupled with the first surface the storage structure;
a dielectric film consisting of a single layer of a dielectric material with a thickness of less than 0.7 nanometers, wherein the dielectric film is directly coupled with a second surface of the first electrode that is disposed opposite to the first surface of the first electrode, and wherein the dielectric film includes a ceramic selected from the group consisting of titanium oxide (TiO 2 ), magnesium oxide (MgO), tungsten oxide (WO), and tantalum oxide (Ta 2 O 5 ); and
a second electrode having a second electrically conductive material, the second electrode being directly coupled with the second surface of the storage structure.

Assignees

• Kau Derchang
• Intel Corp

Inventors

• Kau Derchang

Classifications

• H01L27/2427

  Electricity · mapped topic

• H01L45/1293

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/16

  Electricity · mapped topic

• H01L45/06 Primary

  Electricity · mapped topic