Oxynitride semiconductor thin film

Patent metadata

Field	Value
Publication number	US-9543447-B2
Application number	US-201414773531-A
Country	US
Kind code	B2
Filing date	Mar 6, 2014
Priority date	Mar 8, 2013
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.

First claim

What is claimed is:

1. An oxynitride semiconductor thin film comprising:
a crystalline oxynitride semiconductor comprising In as a main component, O, N, and added element M, where M is one or more element selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y, and rare-earth elements, the amount of added element M included in terms of atomic ratio M/(In+M) is greater than 0 but no greater than 0.20;
a crystal structure of In 2 O 3 phase of Bixbyite structure with N atoms solid-soluted in the In 2 O 3 phase, the amount of N included in the crystalline oxynitride semiconductor being 3×10 20 atoms/cm 3 or more but less than 1×10 22 atoms/cm 3 , and
a carrier density of 1×10 17 cm −3 or less, and
a carrier mobility of 5 cm 2 /Vsec or more.

2. The oxynitride semiconductor thin film according to claim 1 , wherein the carrier mobility is 15 cm 2 /Vsec or greater.

3. The oxynitride semiconductor thin film according to claim 1 , wherein the carrier mobility is 25 cm 2 /Vsec or greater.

4. The oxynitride semiconductor thin film according to claim 1 , wherein the film thickness is 15 nm to 200 nm.

5. The oxynitride semiconductor thin film according to claim 1 , wherein the film thickness is 40 nm to 100 nm.

6. A manufacturing method for the oxynitride semiconductor thin film comprising a step of:
performing an annealing process at a heating temperature of 200° C. or greater, and heating time of 1 minute to 120 minutes on an amorphous oxynitride semiconductor thin film that includes In as a main component, O, N, and added element M, where M is one or more element selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y, and rare-earth elements to obtain the oxynitride semiconductor thin film according to claim 1 .

7. A thin-film transistor that is a thin film transistor comprising a source electrode, a drain electrode, a gate electrode, a channel layer, and a gate insulation film, wherein the channel layer comprises the oxynitride semiconductor thin film of claim 1 .

Assignees

• Sumitomo Metal Mining Co

Inventors

• Nishimura Eiichiro
• Nakayama Tokuyuki
• Iwara Masashi

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H01L29/66969

  Electricity · mapped topic