Molybdenum containing targets
US-2015332903-A1 · Nov 19, 2015 · US
Oxide sputtering target, and thin film transistor using the same
US9543444B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9543444-B2 |
| Application number | US-201414487916-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2014 |
| Priority date | Mar 6, 2014 |
| Publication date | Jan 10, 2017 |
| Grant date | Jan 10, 2017 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
First claim
Opening claim text (preview).
What is claimed is: 1. An oxide sputtering target comprising: at least one of indium (In), zinc (Zn), tin (Sri), and gallium (Ga); and tungsten (W) in an amount from 0.005 mol % to 1 mol %, wherein each of the atoms in the oxide sputtering target is arranged with a hexagonal close packed structure. 2. The oxide sputtering target of claim 1 , wherein an indium content is from 10 mol % to 60 mol %, a zinc content is from 10 mol % to 65 mol %, and a tin content is 0.1 mol % to 60 mol %. 3. An oxide sputtering target comprising: at least one of thallium (Ti), indium (In), zinc (Zn), tin (Sn), and gallium (Ga); and tungsten (W) in an amount from 0.005 mol % to 0.1 mol %; wherein each of the atoms in the oxide sputtering target is arranged with a hexagonal close packed structure. 4. The oxide sputtering target of claim 3 , wherein a sum of contents of thallium and indium is 10 mol % to 60 mol %, a zinc content is from 10 mol % to 65 mol %, and a tin content is from 0.1 mol % to 60 mol %.
Assignees
Inventors
Classifications
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Manufacturing of targets · CPC title
- H01J37/3429Primary
Plural materials · CPC title
- H01L29/7869Primary
Electricity · mapped topic
Subject matter not provided for in other groups of this subclass · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9543444B2 cover?
- An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
- Who is the assignee on this patent?
- Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01J37/3429. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).