Vapor deposition of chalcogenide-containing films

Patent metadata

Field	Value
Publication number	US-9543144-B2
Application number	US-201414587833-A
Country	US
Kind code	B2
Filing date	Dec 31, 2014
Priority date	Dec 31, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.

First claim

We claim:

1. A method of forming a chalcogenide-containing film, the method comprising introducing into a reactor having a substrate therein a vapor of a chalcogenide-containing film forming precursor having the following formula:
(RO) 2 M

wherein, M is S, Se, or Te; E is Si or Ge; and R is independently selected from H, a linear or branched C1-C6 alkyl, C1-C6 alkoxy, C1-C6 alkylsilyl, C1-C6 alkygermyl, C1-C6 perfluorocarbon, C1-C6 alkylsiloxy, C1-C6 alkylamino, alkylsilylamino, or aminoamido group; and
depositing at least part of the chalcogenide-containing film forming precursor onto the substrate.

2. The method of claim 1 , wherein the precursor is selected from the group consisting of (MeO) 2 Te, (EtO) 2 Te, (iPrO) 2 Te, (BuO) 2 Te, (MeO) 2 Se, (EtO) 2 Se, (iPrO) 2 Se, (BuO) 2 Se, (MeO) 2 S, (EtO) 2 S, (iPrO) 2 S, and (BuO) 2 S.

3. The method of claim 2 , wherein the precursor is (MeO) 2 Te, (EtO) 2 Te, (iPrO) 2 Te, or (BuO) 2 Te.

4. The method of claim 3 , wherein the precursor is (MeO) 2 Te.

5. The method of claim 3 , wherein the precursor is (EtO) 2 Te.

6. The method of claim 3 , wherein the precursor is (iPrO) 2 Te.

7. The method of claim 3 , wherein the precursor is (BuO) 2 Te.

8. The method of claim 2 , wherein the precursor is (MeO) 2 Se, (EtO) 2 Se, (iPrO) 2 Se, or (BuO) 2 Se.

9. The method of claim 8 , wherein the precursor is (MeO) 2 Se.

10. The method of claim 8 , wherein the precursor is (EtO) 2 Se.

11. The method of claim 8 , wherein the precursor is (iPrO) 2 Se.

12. The method of claim 8 , wherein the precursor is (BuO) 2 Se.

13. The method of claim 2 , wherein the precursor is (MeO) 2 S, (EtO) 2 S, (iPrO) 2 S, or (BuO) 2 S.

14. The method of claim 13 , wherein the precursor is (MeO) 2 S.

15. The method of claim 13 , wherein the precursor is (EtO) 2 S.

16. The method of claim 13 , wherein the precursor is (iPrO) 2 S.

17. The method of claim 13 , wherein the precursor is (BuO) 2 S.

Assignees

• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
• Air Liquide

Inventors

• Ishii Hana
• Schneider Nathanaelle
• Gatineau Julien

Classifications

• H10P14/3424

  being Group IIB-VIA materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3436 Primary

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/305

  Sulfides, selenides, or tellurides · CPC title