Film forming method, film forming apparatus and recording medium

Patent metadata

Field	Value
Publication number	US-9540733-B2
Application number	US-201514697824-A
Country	US
Kind code	B2
Filing date	Apr 28, 2015
Priority date	May 7, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A film forming method in which in a state in which a target substrate is loaded on a loading table body of a loading table installed in a processing container and an interior of the processing container is evacuated, a film forming material gas is supplied into the processing container while heating the target substrate with a heater installed in the loading table body, to be thermally decomposed or reacted on a surface of the target substrate to form a predetermined film on the target substrate, includes introducing a heat transfer gas containing an H 2 gas or an He gas into the processing container to transfer heat of the loading table body to a radially outer side of the loading table body, before the film forming material gas is supplied.

First claim

What is claimed is:

1. A film forming method in which in a state in which a target substrate is loaded on a loading table body of a loading table installed in a processing container and an interior of the processing container is evacuated, a film forming material gas is supplied into the processing container while heating the target substrate with a heater installed in the loading table body, to be thermally decomposed or reacted on a surface of the target substrate to form a predetermined film on the target substrate, the method comprising:
heating the loading table body with the heater; and
introducing a heat transfer gas containing an H 2 gas or an He gas into the processing container and increasing a temperature of the heat transfer gas based on to transfer heat of the heated loading table body, the heat transfer gas flowing to a radially outer side of the loading table body, before the film forming material gas is supplied.

2. The method of claim 1 , wherein the loading table comprises an outer member having a temperature set to be lower than that of the target substrate in the radially outer side of the loading table body.

3. The method of claim 1 , wherein, before the target substrate is loaded to the processing container, the heat transfer gas is introduced into the processing container to transfer heat of the loading table body to the radially outer side of the loading table body and then is exhausted from the processing container, and after that, the target substrate is loaded on the loading table in the processing container for a film forming process.

4. The method of claim 3 , wherein, after the target substrate is loaded on the loading table in the processing container, a temperature increasing gas is introduced into the processing container to increase a temperature of the target substrate, and the film forming process is then performed thereon.

5. The method of claim 1 , wherein a Ru 3 (CO) 12 gas is used as the film forming material gas and is thermally decomposed to form a ruthenium film as the predetermined film.

6. The method of claim 5 , wherein the ruthenium film as the predetermined film is used as a base for a copper film in forming a copper wiring.

7. The method of claim 1 , wherein an orifice forming member having a ring shape is installed along a circumferential direction of the loading table and extends toward a center of the processing container, and an orifice portion is formed between a lower surface of the orifice forming member and a peripheral portion of the loading table to communicate with a gas outlet, and
wherein the heat transfer gas flows to a radially outer side of the loading table body and is exhausted through the orifice portion.

8. A non-transitory computer-readable recording medium storing a program that operates on a computer to control a film forming apparatus,
wherein, when executed, the program controls the firm forming apparatus on the computer such that the method of claim 1 is performed.

Assignees

• Tokyo Electron Ltd

Inventors

• Ishizaka Tadahiro

Classifications

• H10P14/60

  of insulating materials · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/033

  in openings in dielectrics · CPC title