Deposition of titanium nanolaminates for use in integrated circuit fabrication

Patent metadata

Field	Value
Publication number	US-9540729-B1
Application number	US-201514835456-A
Country	US
Kind code	B1
Filing date	Aug 25, 2015
Priority date	Aug 25, 2015
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

Processes are provided for depositing titanium nanolaminate thin films that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. In some embodiments a titanium nanolaminate film comprising titanium oxide layers and titanium nitride layers is deposited on a three-dimensional feature, such as an existing mask feature. The conformal titanium nanolaminate film may be directionally etched so that only the titanium nanolaminate deposited or formed on the sidewalls of the existing three-dimensional feature remains. The three-dimensional feature is then removed via an etching process, leaving the pitch doubled titanium nanolaminate film.

First claim

What is claimed is:

1. A process for depositing a titanium nanolaminate thin film in integrated circuit fabrication comprising:
depositing a first titanium material layer comprising nitrogen, oxygen, and/or carbon by at least one cycle of a first deposition process;
depositing a second titanium oxide layer by at least one cycle of a second deposition process, wherein the second titanium oxide layer is a different material from the first titanium material; and
repeating at least the depositing a first titanium material layer step until a titanium nanolaminate thin film of a desired thickness has been formed, wherein the first titanium material comprises at least one of titanium oxynitride, titanium oxycarbide, titanium nitride, and titanium carbide, and wherein the titanium nanolaminate film comprises multiple alternating layers of the first titanium material layer and the second different titanium oxide layer.

2. The process of claim 1 , wherein the process is used to form spacers in an integrated circuit fabrication process.

3. The process of claim 1 , wherein the first titanium material layer comprises titanium nitride and the second titanium oxide layer comprises titanium oxide.

4. The process of claim 1 , wherein a number of cycles of the first titanium material deposition process is more than about 2 times a number of cycles of the second titanium oxide deposition process.

5. The process of claim 1 , wherein a cycle of the second titanium oxide deposition process is carried out for between about every 1 cycle to about every 100 cycles of the first titanium material deposition process.

6. The process of claim 1 , wherein a ratio of a number of first titanium material layers to a number of second titanium oxide layers in the titanium nanolaminate thin film is from about 1:1 to about 100:1.

7. The process of claim 1 , wherein a ratio of a number of first titanium material layers to a number of second titanium oxide layers in the titanium nanolaminate thin film is from about 1:1 to about 30:1.

8. The process of claim 1 , wherein at least one of the first cyclical deposition process and the second cyclical deposition process is a plasma enhanced atomic layer deposition (PEALD) process.

9. The process of claim 1 , wherein the first cyclical deposition process comprises at least one cycle, the cycle comprising:
contacting the substrate with a first vapor phase titanium precursor;
removing excess first vapor phase titanium precursor and reaction by-products, if any;
contacting the substrate with a first vapor phase reactant;
removing excess first vapor phase reactant and reaction by-products, if any;
repeating the contacting and removing steps until a first titanium material layer comprising nitrogen, oxygen, and/or carbon of a desired thickness is formed.

10. The process of claim 9 , wherein the first vapor phase titanium precursor comprises an alkylamine ligand.

11. The process of claim 9 , wherein the first vapor phase titanium precursor comprises at least one of titanium tetraisopropoxide (TTiP), tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium (TDEAT), and tetrakis(ethylmetylamino)titanium (TEMAT).

12. The process of claim 9 , wherein the first vapor phase reactant comprises at least one of NH 3 , N 2 H 2 , nitrogen plasma, nitrogen radicals, nitrogen atoms, O 2 , O 3 , H 2 O, oxygen plasma, oxygen radicals, oxygen atoms, H 2 , hydrogen plasma, hydrogen radicals, and hydrogen atoms.

13. The process of claim 1 , wherein the second cyclical deposition process comprises at least one cycle, the cycle comprising:
contacting the substrate with a second vapor phase titanium precursor;
removing excess second vapor phase titanium precursor and reaction by-products, if any;
contacting the substrate with a second vapor phase reactant comprising oxygen;
removing excess second vapor phase reactant and reaction by-products, if any;
repeating the contacting and removing steps until a second titanium oxide layer of a desired thickness is formed.

14. The process of claim 13 , wherein the second vapor phase titanium precursor comprises an alkylamine ligand.

15. The process of claim 13 , wherein the second vapor phase titanium precursor comprises at least one of titanium tetraisopropoxide (TTiP), tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium (TDEAT), and tetrakis(ethylmetylamino)titanium (TEMAT).

16. The process of claim 13 , wherein the second vapor phase reactant comprises at least one of O 2 , O 3 , H 2 O, oxygen plasma, oxygen radicals, oxygen atoms.

17. The process of claim 1 , wherein the first vapor phase titanium precursor and the second vapor phase titanium precursor are the same.

18. The process of claim 1 , wherein a ratio of an etch rate of the titanium nanolaminate thin film to an etch rate of silicon dioxide is from about 1:10 to about 1:3.

19. The process of claim 1 , wherein the titanium nanolaminate has a surface roughness, Rq, less than about 0.2 microns.

20. A process for depositing a titanium nanolaminate thin film on a substrate in a reaction chamber by an atomic layer deposition (ALD) process comprising at least one supercycle, the supercycle comprising:
a first titanium material deposition process comprising at least one cycle, the cycle comprising:
alternately and sequentially contacting the substrate with a first vapor phase titanium precursor and a first reactant; and

a second titanium oxide layer deposition process comprising at least one cycle, the cycle comprising:
alternately and sequentially contacting the substrate with a second vapor phase titanium precursor and a second reactant comprising oxygen;
wherein the second titanium oxide is a different material from the first titanium material; and

repeating at least the first titanium material deposition process until a titanium nanolaminate thin film of a desired thickness is formed, wherein the titanium nanolaminate film comprises multiple alternating layers of the first titanium material and the second different titanium material.

21. The process of claim 20 , wherein the process is used to form spacers for use in integrated circuit fabrication.

22. The process of claim 20 , wherein the first vapor phase titanium precursor and the second vapor phase titanium precursor comprise at least one of titanium tetraisopropoxide (TTiP), tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium (TDEAT), and tetrakis(ethylmetylamino)titanium (TEMAT).

23. The process of claim 20 , wherein the first reactant comprises at least one of NH 3 , N 2 H 2 , nitrogen plasma, nitrogen radicals, nitrogen atoms, O 2 , O 3 , H 2 O, oxygen plasma, oxygen radicals, oxygen atoms, H 2 , hydrogen plasma, hydrogen radicals, and hydrogen atoms.

24. The process of claim 20 , wherein the second reactant comprises at least one of O 2 , O 3 , H 2 O, oxygen plasma, oxygen radicals, oxygen atoms.

25. The process of claim 20 , wherein a number of first titanium material deposition cycles is more than about 2 times a number of second titanium oxide deposition cycles.

Assignees

• Asm Ip Holding Bv

Inventors

• Okura Seiji
• Suemori Hidemi
• Pore Viljami J

Classifications

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/45531

  specially adapted for making ternary or higher compositions · CPC title

• C23C16/45538

  Plasma being used continuously during the ALD cycle · CPC title

• C23C16/45529 Primary

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title