Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Patent metadata

Field	Value
Publication number	US-9540727-B2
Application number	US-201414192165-A
Country	US
Kind code	B2
Filing date	Feb 27, 2014
Priority date	Mar 1, 2013
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.

First claim

What is claimed is:

1. A cleaning method for a process container in which a process of forming a film on a substrate is performed, the method comprising:
removing a deposit including the film adhered to an interior of the process container by supplying a cleaning gas into the process container after performing the process of forming a film,
wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixing and reacting the fluorine-containing gas and a nitrogen monoxide gas in a mixture part, removing exothermic energy generated from the reaction of the fluorine-containing gas and the nitrogen monoxide gas by cooling at least one of the mixture part and a downstream side of the mixture part, and supplying the mixture gas from the mixture part into the process container after the cooling, and
wherein the act of removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.

2. The cleaning method of claim 1 , wherein the act of removing the deposit further includes setting a ratio (B/A) of a flow rate (B) of the fluorine-containing gas to a flow rate (A) of the nitrosyl fluoride gas in the mixture gas to be equal to or more than 0.5 and less than 1.

3. The cleaning method of claim 1 , wherein the act of removing the deposit further includes setting a ratio (B/A) of a flow rate (B) of the fluorine-containing gas to a flow rate (A) of the nitrosyl fluoride gas in the mixture gas to be equal to or more than 0.5 and equal to or less than 0.75.

4. The cleaning method of claim 1 , wherein the act of removing the deposit further includes setting a ratio (B/A) of a flow rate (B) of the fluorine-containing gas left without being consumed by the reaction to a flow rate (A) of the nitrosyl fluoride gas generated by the reaction to be equal to or more than 0.5 and less than 1.

5. The cleaning method of claim 1 , wherein the act of removing the deposit further includes setting a ratio (B/A) of a flow rate (B) of the fluorine-containing gas left without being consumed by the reaction to a flow rate (A) of the nitrosyl fluoride gas generated by the reaction to be equal to or more than 0.5 and equal to or less than 0.75.

6. The cleaning method of claim 1 , wherein the act of removing the deposit further includes generating the mixture gas on-site and supplying the generated mixture gas into the process container.

7. The cleaning method of claim 1 , wherein the fluorine-containing gas includes at least one selected from a group consisting of a fluorine gas, a chlorine fluoride gas, a nitrogen fluoride gas and a carbon fluoride gas.

8. The cleaning method of claim 1 , wherein the fluorine-containing gas includes at least one selected from a group consisting of a fluorine gas and a chlorine fluoride gas.

9. The cleaning method of claim 1 , wherein the fluorine-containing gas includes at least one selected from a group consisting of a nitrogen fluoride gas and a carbon fluoride gas, and the act of removing the deposit includes mixing the fluorine-containing gas after being decomposed and the nitrogen monoxide gas in the mixture part.

10. The cleaning method of claim 1 , wherein the mixture part is configured by a pipe arrangement.

11. The cleaning method of claim 1 , wherein the mixture part is configured by a mixture chamber.

12. A method of manufacturing a semiconductor device, comprising:
performing a process of forming a film on a substrate in the process container; and
removing a deposit including the film adhered to an inside of the process container by supplying a cleaning gas into the process container after performing the process,
wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixing and reacting the fluorine-containing gas and a nitrogen monoxide gas in a mixture part, removing exothermic energy generated from the reaction of the fluorine-containing gas and the nitrogen monoxide by cooling at least one of the mixture part and a downstream side of the mixture part, and supplying the mixture gas from the mixture part into the process container after the cooling, and
wherein the act of removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.

13. A substrate processing apparatus comprising:
a process container in which a process of forming a film on a substrate is performed;
a fluorine-containing gas supply system configured to supply a fluorine-containing gas;
a nitrogen monoxide gas supply system configured to supply a nitrogen monoxide gas;
a mixture part configured to mix and react the fluorine-containing gas with the nitrogen monoxide gas;
an energy removal mechanism configured to remove exothermic energy generated from the reaction of the fluorine-containing gas and the nitrogen monoxide gas by cooling at least one of the mixture part and a downstream side of the mixture part; and
a control part configured to control the fluorine-containing gas supply system, the nitrogen monoxide gas supply system and the energy removal mechanism to generate a mixture gas of the fluorine-containing gas and a nitrosyl fluoride gas as a cleaning gas by mixture and reaction of the fluorine-containing gas supplied from the fluorine-containing gas supply system and the nitrogen monoxide gas supplied from the nitrogen monoxide gas supply system in the mixture part and supply the mixture gas from the mixture part into the process container after removing exothermic energy generated from the reaction by means of the energy removal mechanism, such that a deposit including the film adhered to an interior of the process container is removed, while the energy removal mechanism for removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.

14. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of:
performing a process of forming a film on a substrate in a process container; and
removing a deposit including the film adhered to an interior of the process container by supplying a cleaning gas into the process container after performing the film forming process,
wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixing and reacting the fluorine-containing gas and a nitrogen monoxide gas in a mixture part, removing exothermic energy generated from the reaction by cooling at least one of the mixture part and a downstream side of the mixture part, and supplying the mixture gas from the mixture part into the process container after the cooling, and wherein the act of removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.

Assignees

• Hitachi Int Electric Inc
• Air Liquide
• Hitachi Int Electric Inc

Inventors

• Kameda Kenji
• Sonobe Jun
• Tadaki Yudai

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H01L21/02271

  Electricity · mapped topic

• H01L21/02211

  Electricity · mapped topic