Laser diode apparatus

Patent metadata

Field	Value
Publication number	US-9537285-B2
Application number	US-201414787680-A
Country	US
Kind code	B2
Filing date	Apr 25, 2014
Priority date	May 7, 2013
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

Laser diode apparatus, comprising a carrier ( 1 ) having a carrier top ( 11 ), a laser diode chip ( 4 ) arranged on the carrier top ( 11 ) emitting, during operation, electromagnetic radiation through a radiating face ( 5 ), which radiating face ( 5 ) runs perpendicularly to the carrier top ( 11 ), and at least one optical element ( 6 ) to deflect at least some of the electromagnetic radiation radiated by the laser diode chip ( 4 ) perpendicularly to the carrier top ( 11 ). By the use of a plurality of laser diode chips having wavelengths that differ very slightly from one another, speckles can be reduced. By means of a retarder plate ( 8 ) between the laser diode chip and the optical element it is possible to influence the polarization. A polarization cube enables the deflected light beam bundles to fully cover one another as differently polarized light beam bundles.

First claim

The invention claimed is:

1. A laser diode apparatus, comprising:
a carrier having a carrier top;
a plurality of laser diode chips arranged on the carrier top, the laser diode chips emitting, during operation, electromagnetic radiation through a radiating face, which radiating face runs perpendicularly to the carrier top; and
at least one optical element by means of which at least some of the electromagnetic radiation radiated by the laser diode chips is deflected perpendicularly to the carrier top,
wherein the laser diode chips have different emission wavelengths and the emission wavelengths of the laser diode chips differ from one another by at most 15 nm.

2. The laser diode apparatus according to claim 1 , comprising a mounting plate which is arranged on the carrier top and covers at least a portion thereof, the mounting plate being located between the at least one laser diode chip and the carrier.

3. The laser diode apparatus according to claim 2 , wherein the mounting plate is formed by a copper plate.

4. The laser diode apparatus according to claim 2 , wherein the mounting plate has a thickness of at least 0.5 mm and at most 2 mm.

5. The laser diode apparatus according to claim 1 , wherein the plurality of laser diode chips is arranged on a chip carrier.

6. The laser diode apparatus according to claim 1 , wherein the optical element is a prism.

7. The laser diode apparatus according to claim 1 , wherein the optical element is a mirror.

8. The laser diode apparatus according to claim 1 , wherein the optical element is a polarisation cube.

9. The laser diode apparatus according to claim 1 , wherein at least one retarder plate is arranged between the laser diode chip and the optical element.

10. The laser diode apparatus according to claim 9 , wherein the retarder plate is a λ/2 plate.

11. The laser diode apparatus according to claim 1 , wherein the laser diode chips are directed towards the optical element in such a way that light beam bundles of the laser diode chips deflected by the optical element at least partially overlap.

12. The laser diode apparatus according to claim 1 , wherein the laser diode chips are directed towards the optical element in such a way that light beam bundles of the laser diode chips deflected by the optical element do not overlap.

13. The laser diode apparatus according to claim 1 , wherein the laser diode apparatus comprises a housing which is a TO housing.

14. The diode apparatus according to claim 13 , wherein the housing is hermetically sealed with respect to the environment and is evacuated or filled with a protective gas.

15. A laser diode apparatus, comprising:
a carrier having a carrier top;
a plurality of laser diode chips are arranged on the carrier top, the laser diode chips emitting, during operation, electromagnetic radiation through a radiating face, which radiating face runs perpendicularly to the carrier top; and
at least one optical element by means of which at least some of the electromagnetic radiation radiated by the laser diode chips is deflected perpendicularly to the carrier top, wherein the laser diode chips have different emission wavelengths and the emission wavelengths of the laser diode chips differ from one another by at most 15 nm,
wherein all the laser diode chips have wavelengths of an identical color impression, and wherein wavelengths of identical color impression are superimposed by deflection.

16. The laser diode apparatus according to claim 1 , wherein the emission wavelengths of the laser diode chips differ from one another by at most 10 nm.

17. The laser diode apparatus according to claim 15 , wherein the emission wavelengths of the laser diode chips differ from one another by at most 10 nm.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Horn Markus
• Rozynski Andreas
• Auen Karsten
• Haneder Stephan
• Dobbertin Thomas

Classifications

• H01S5/4087

  emitting more than one wavelength · CPC title

• H01S5/02248

  Electricity · mapped topic

• H01S5/0222

  Gas-filled housings · CPC title

• H01S5/02476

  Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements · CPC title

• H01S5/02212 Primary

  Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis · CPC title