Magnetic random access memory with ultrathin reference layer
US-2015311431-A1 · Oct 29, 2015 · US
Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
US9537090B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9537090-B1 |
| Application number | US-201514749770-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jun 25, 2015 |
| Priority date | Jun 25, 2015 |
| Publication date | Jan 3, 2017 |
| Grant date | Jan 3, 2017 |
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Abstract
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A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.
First claim
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What is claimed is: 1. A method of making a STT MRAM device, the method comprising: forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a magnetic layer, a CoFeB alloy layer, a spacer layer between the magnetic layer and the CoFeB alloy layer, and an Fe layer on the CoFeB alloy layer; and performing a sputtering process to form a metal oxide layer on the free layer. 2. The method of claim 1 , wherein the CoFeB alloy layer comprises boron (B) in an amount in a range from about 20 to about 30 at. %. 3. The method of claim 1 , wherein the CoFeB alloy layer comprises Fe in an amount in a range from about 20 to about 60 at. %. 4. The method of claim 1 , wherein the CoFeB alloy layer comprises cobalt (Co) in an amount in a range from about 20 to about 40 at. %. 5. The method of claim 1 , wherein the sputtering process is RF sputtering. 6. The method of claim 5 , wherein the RF sputtering comprises sputtering a metal oxide onto the CoFeB alloy layer. 7. The method of claim 6 , wherein the metal oxide is MgO, tantalum oxide (TaOx), titanium oxide (TiOx), aluminum oxide (AlOx), magnesium titanium oxide (MgTiOx), or any combination thereof. 8. A method of making a STT MRAM device, the method comprising: forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a magnetic layer, a CoFeB alloy layer, a spacer layer between the magnetic layer and the CoFeB alloy layers, and an Fe layer disposed on the CoFeB alloy layer; and performing a sputtering process to form a metal oxide layer on the free layer; wherein sputtering process comprises RF sputtering a metal oxide onto the Fe layer under a pressure in a range from about 0.1 to about 10 milli-Torr (mTorr). 9. The method of claim 8 , wherein the Fe layer comprises at least 99 at. % Fe. 10. The method of claim 8 , wherein the free layer has a thickness in a range from about 0.6 to about 6 nm. 11. The method of claim 8 , wherein the metal oxide layer has a thickness in a range from about 0.2 to about 2 nm. 12. The method of claim 8 , wherein the sputtering process further comprises depositing the metal oxide at a deposition rate in a range from about 0.0005 nm/second to 0.005 nm/second.
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- What does patent US9537090B1 cover?
- A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L43/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 03 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).