Magnetic tunnel junctions

Patent metadata

Field	Value
Publication number	US-9537088-B1
Application number	US-201514797622-A
Country	US
Kind code	B1
Filing date	Jul 13, 2015
Priority date	Jul 13, 2015
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

First claim

We claim:

1. A magnetic tunnel junction, comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic insulator material between the first and second electrodes;
the magnetic reference material of the second electrode comprising an iridium-containing material over a stack comprising Co and one or more of platinum, palladium and nickel;
the magnetic reference material of the second electrode comprising a polarizer region over the iridium-containing region, the polarizer region containing a cobalt material consisting essentially of cobalt, a cobalt-and-iron-containing material directly against the non-magnetic insulator material and an amorphous buffer region between the cobalt material and the cobalt-and-iron-containing material; and
wherein the iridium-containing material and the stack have a first crystalline lattice, and the non-magnetic insulator material and the cobalt-and-iron-containing material have a second crystalline lattice which is different from the first crystalline lattice.

2. The magnetic tunnel junction of claim 1 wherein the iridium-containing material has a thickness within a range of from about 2 Å to about 20 Å.

3. The magnetic tunnel junction of claim 1 wherein the iridium-containing material has a thickness within a range of from about 4 Å to about 8 Å.

4. The magnetic tunnel junction of claim 1 wherein the first crystalline lattice is face centered cubic (fcc) 111; and wherein the second crystalline lattice is body centered cubic (bcc) 001.

5. The magnetic tunnel junction of claim 1 wherein the buffer region consists of one or more of tantalum, ruthenium, tungsten, molybdenum.

6. The magnetic tunnel junction of claim 1 wherein the buffer region consists of tantalum.

7. The magnetic tunnel junction of claim 1 wherein the cobalt-and-iron-containing material further comprises one or more of B, Ta, W, Re and Mo.

8. The magnetic tunnel junction of claim 1 wherein the cobalt-containing material consists of cobalt.

9. The magnetic tunnel junction of claim 1 wherein the cobalt-containing adhesion material has the first crystalline lattice.

10. A magnetic tunnel junction, comprising:
a conductive first magnetic electrode comprising magnetic recording material;
a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material;
a non-magnetic insulator material between the first and second electrodes;
the magnetic reference material of the second electrode comprising a stack of alternating first and second layers; the first layers comprising cobalt and the second layers comprising one or more of Pt, Pd and Ni;
the magnetic reference material of the second electrode comprising an iridium-containing region over the stack; and
the magnetic reference material of the second electrode comprising a polarized region between the iridium-containing region and the non-magnetic insulator material; the polarized region including a material comprising cobalt and iron, a material consisting of cobalt, and a buffer region disposed between the material consisting of cobalt and the material comprising cobalt and iron; and
wherein:
the iridium-containing region consists of iridium;
the material consisting of cobalt is directly against the iridium-containing region, the material consisting of cobalt and the iridium-containing region having a first crystalline lattice;
and
the material comprising cobalt and iron of the polarized region being over the buffer material and comprising a second crystalline lattice which is different from the first crystalline lattice.

11. The magnetic tunnel junction of claim 10 wherein the buffer region comprises one or more of tantalum, ruthenium, tungsten and molybdenum.

12. The magnetic tunnel junction of claim 11 wherein the buffer region has a thickness of from about 1 Å to about 5 Å.

13. The magnetic tunnel junction of claim 1 wherein the buffer region has a thickness of from about 1 Å to about 5 Å.

Assignees

• Micron Technology Inc

Inventors

• Harms Jonathan D
• Chen Wei
• Murthy Sunil S

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/85 Primary

  Materials of the active region · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic