Metrology method and apparatus, substrate, lithographic system and device manufacturing method

Patent metadata

Field	Value
Publication number	US-9535338-B2
Application number	US-201314403010-A
Country	US
Kind code	B2
Filing date	May 1, 2013
Priority date	May 29, 2012
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.

First claim

The invention claimed is:

1. A method of measuring a property of a lithographic process, using a composite target structure including a plurality of component structures that have been formed by the lithographic process on a substrate, the method comprising:
detecting an image of the composite target structure using a predetermined portion of radiation diffracted by the plurality of component target structures under predetermined illumination conditions;
identifying one or more regions in the detected image, each region corresponding to a respective one of the plurality of component structures; and
processing pixel values within the one or more regions to obtain a measurement of the property of the lithographic process,
wherein the composite target structure is formed with separation zones between the plurality of component structures and each region corresponding to the respective one of the plurality of component structures includes an entire image of the respective one of the plurality of component structures and part of an image of the separation zone.

2. The method of claim 1 , wherein the plurality of component structures comprise overlaid gratings, and wherein different component structures within the composite target structure are formed with different overlay bias values.

3. The method of claim 2 , wherein:
the plurality of component structures comprise overlaid gratings, and
wherein different component structures within the composite target structure are formed with different orientations to measure overlay in different directions.

4. The method of claim 1 , wherein:
two or more images of the composite target structure are detected using different portions of the diffracted radiation, and
the processing comprises comparing the pixel values from corresponding regions identified in the images to obtain a measurement of asymmetry of the plurality of component structures.

5. The method of claim 1 , wherein the identifying and the processing comprises:
identifying regions corresponding to at least two component structures in the detected image; and
processing pixel values within the regions corresponding to the at least two component structures separately.

6. The method of claim 1 , wherein the separation zones occupy more than 5% of the composite target structure in a given direction.

7. The method of claim 1 , wherein the separation zones in the composite target structure contain filling structures having an average density similar to that of the plurality of component structures but with higher spatial frequencies, whereby radiation diffracted by the filling structures falls outside the portion of radiation used in the formation of the detected image.

8. A non-transitory computer-readable storage medium having instructions stored thereon that, when executed by at least one computing device, causes the at least one computing device to perform operations comprising:
detecting an image of a composite target structure including component target structures using a predetermined portion of radiation diffracted by the component target structures under predetermined illumination conditions;
identifying one or more regions in the detected image, each region corresponding to a respective one of the component target structures; and
processing pixel values within the one or more regions to obtain a measurement of property of a lithographic process,
wherein the composite target structure is formed with separation zones between the component target structures and each region corresponding to the respective one of the component target structures includes an entire image of the respective one of the component target structures and part of an image of the separation zone.

9. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method comprising:
inspecting at least one composite target structure formed as part of or beside the device pattern on at least one of the substrates using an inspection method comprising:
detecting an image of the composite target structure including component target structures using a predetermined portion of radiation diffracted by the component target structures under predetermined illumination conditions;
identifying one or more regions in the detected image, each region corresponding to a respective one of the component target structures; and
processing pixel values within the one or more regions to obtain a measurement of a property of the lithographic process,
wherein the composite target structure is formed with separation zones between the component target structures and each region corresponding to the respective one of the component target structures includes an entire image of the respective one of the component target structures and part of an image of the separation zone; and

controlling the lithographic process for later substrates in accordance with the measured property of the lithographic process.

10. The method of claim 1 , wherein the separation zones occupy more than 10% of the composite target structure in a given direction.

11. The method of claim 1 , wherein the separation zones occupy more than 15% of the composite target structure in a given direction.

Assignees

• Asml Netherlands Bv

Inventors

• Jak Martin Jacobus Johan
• Koolen Armand Eugene Albert
• Smilde Hendrik Jan Hidde

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/70483 Primary

  Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring · CPC title

• G03F7/70625 Primary

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title