Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
US-2024234132-A1 · Jul 11, 2024 · US
US9534293B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9534293-B2 |
| Application number | US-88210010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2010 |
| Priority date | Nov 2, 2006 |
| Publication date | Jan 3, 2017 |
| Grant date | Jan 3, 2017 |
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The purpose of the invention is a process for obtaining a material comprising a substrate at least part of whose surface and at least one of whose faces is based on organic compounds, the said process being implemented at atmospheric pressure comprises moreover the following stages: In the immediate vicinity of the said substrate a zone containing active species of a non-thermal plasma is created; into the said zone is injected at least one precursor of a chemical element so as to deposit upon at least one face of the said substrate (at least part of whose surface comprises an organic compound base), a first thin layer capable of protecting the said substrate against oxidation reactions, specifically those due to radicals. A further purpose of the invention is the material obtainable according to this process.
Opening claim text (preview).
The invention claimed is: 1. A process whereby a material obtained comprising a substrate of which at least a part of the surface of at least one of the faces of the substrate is based on organic compounds, the process being implemented at atmospheric pressure and without heating the totality of the said substrate, the process comprising the following stages: (a) in immediate proximity to the substrate, creating a region containing active species of a non-thermal plasma; (b) into said region injecting at least one precursor of a chemical element, the at least one precursor being selected from the group consisting of (i) precursors of zirconium, (ii) precursors of aluminum, (iii) mixtures including at least one precursor of silicon oxide, and at least one precursor of zirconium, (iv) mixtures including at least one precursor of silicon dioxide and at least one precursor of aluminum, (v) mixtures including at least one precursor of silicon oxide, at least one precursor of zirconium, and at least one precursor of aluminum, and (vi) mixtures including at least one precursor of zirconium, and at least one precursor of aluminum; so as to deposit onto at least one face of the said substrate, at least one part of the surface being based on organic compounds, a first thin layer able to protect said substrate against oxidation reactions due to radicals; and (c) subsequently depositing a second thin layer with photocatalytic properties onto the first thin layer. 2. A process according to claim 1 such that the active species of the non-thermal plasma are generated in immediate proximity to the substrate by positioning said substrate between two electrodes, or are generated in an enclosure by means of an electric field before being blown out of said enclosure in the direction of the said substrate. 3. A process according to claim 1 such that the first thin layer is a hybrid organic/inorganic layer comprising carbon species covalently bonded to silicon, the concentration of carbon species decreasing linearly within the thickness of the said thin layer from the region nearest the substrate up to the surface of the material. 4. A process according to claim 1 , such that the thin layer with photocatalytic properties includes titanium oxide at least partially crystallized in anatase form. 5. A process according to claim 4 , such that the titanium oxide is present in the form of nanoparticles distributed in an inorganic binder based on silicon oxide obtained by a sol-gel process. 6. A process according to claim 1 , such that the second thin layer with photocatalytic properties is obtained by injecting into the region containing the active species of the non-thermal plasma at least one material selected from the group consisting of gaseous titanium precursor, liquid titanium precursor, and nanoparticles of titanium oxide. 7. A process according to claim 1 , such that the surface of the substrate is subjected to the action of active species of the non-thermal plasma before deposition of the first thin layer. 8. A process whereby a material obtained comprising a substrate of which at least a part of the surface of at least one of the faces of the substrate is based on organic compounds, said process being implemented at atmospheric pressure and without heating the totality of said substrate, said process comprising moreover the following stages: (a) in immediate proximity to said substrate creating a region containing active species of a non-thermal plasma, (b) into said region injecting at least a first precursor of a chemical element and a second precursor of a chemical element so as to deposit onto at least one face of said substrate, at least one part of the surface being based on organic compounds, a thin layer able to protect said substrate against oxidation reactions due to radicals, said precursors being selected to provide a thin layer comprising silicon, oxygen, and titanium, the concentrations precursors being controlled during deposition so as to create an increasing concentration gradient of titanium within the thin layer, and providing a photocatalytically active surface. 9. A process according to claim 8 such that the active species of the non-thermal plasma are generated in immediate proximity to the substrate by positioning said substrate between two electrodes, or are generated in an enclosure by means of an electric field before being blown out of said enclosure in the direction of the said substrate. 10. A process according to claim 9 , such that said thin layer includes titanium oxide at least partially crystallized in anatase form. 11. A process according to claim 9 , such that said thin layer with photocatalytic properties is obtained by injecting into the region containing the active species of the non-thermal plasma at least one material selected from the group consisting of gaseous titanium precursor, liquid titanium precursor, and nanoparticles of titanium oxide. 12. A process according to claim 9 , such that the surface of the substrate is subjected to the action of active species of the non-thermal plasma before deposition of the first thin layer. 13. A process according to claim 8 such that the thin layer is a hybrid organic/inorganic layer comprising silicon, oxygen and carbon species covalently bonded to silicon, the concentration of carbon species decreasing linearly within the thickness of the said thin layer from the region nearest the substrate up to the surface of the material. 14. A process whereby a material obtained comprising a substrate of which at least a part of the surface of at least one of the faces of the substrate is based on organic compounds, said process being implemented at atmospheric pressure and without heating the totality of said substrate, said process comprising moreover the following stages: (a) in immediate proximity to said substrate creating a region containing active species of a non-thermal plasma; (b) Into said region injecting at least one precursor of a chemical element so as to deposit onto at least one face of said substrate, at least one part of the surface being based on organic compounds, a first thin layer able to protect said substrate against oxidation reactions due to radicals, said at least one precursor being selected to provide a hybrid organic/inorganic layer comprising silicon, oxygen and carbon species covalently bonded to silicon; and (c) subsequently depositing a second thin layer with photocatalytic properties onto the first thin layer. 15. A process according to claim 14 such that the active species of the non-thermal plasma are generated in immediate proximity to the substrate by positioning said substrate between two electrodes, or are generated in an enclosure by means of an electric field before being blown out of said enclosure in the direction of the said substrate. 16. A process according to claim 14 , such that the thin layer with photocatalytic properties includes titanium oxide at least partially crystallized in anatase form. 17. A process according to claim 16 , such that the titanium oxide is present in the form of nanoparticles distributed in an inorganic binder based on silicon oxide obtained by a sol-gel process. 18. A process according to claim 14 , such that the second thin layer with photocatalytic properties is obtained by injecting into the region containing the active species of the non-thermal plasma at least one material selected from the group consisting of gaseous titanium precursor, liquid titanium precursor, and nanoparticles of titanium oxide.
using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title
Surface property or characteristic of web, sheet or block · CPC title
Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title
containing silicon · CPC title
of refractory metals or yttrium · CPC title
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