Apparatus for deposition of polycrystalline silicon comprising uniformly spaced filament rods and gas inlet orifices, and process for deposition of polycrystalline silicon using same

Patent metadata

Field	Value
Publication number	US-9534290-B2
Application number	US-201213618044-A
Country	US
Kind code	B2
Filing date	Sep 14, 2012
Priority date	Oct 7, 2011
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

The invention relates to an apparatus for deposition of polycrystalline silicon, including a reactor chamber with a reactor wall, at least 20 filament rods and gas inlet orifices for reaction gas in the reactor chamber, wherein each filament rod—except for the filament rods close to the reactor wall—has, at a distance of 150 to 450 mm, three further adjacent filament rods and one to three adjacent gas inlet orifices. The invention further relates to a process for depositing polycrystalline silicon on filament rods in such an apparatus, the gas inlet orifices are used to introduce a silicon-containing gas into the reactor chamber and the filament rods are heated to a temperature at which silicon is deposited thereon.

First claim

What is claimed is:

1. An apparatus for deposition of polycrystalline silicon, comprising a reactor chamber with a reactor wall, at least 20 filament rods and gas inlet orifices for reaction gas in the reactor chamber, wherein the filament rods are hexagonally arranged and each filament rod—except for the filament rods close to the reactor wall—has, at a distance of 150 to 450 mm, three further adjacent filament rods and one to three adjacent gas inlet orifices, and wherein the reactor chamber has a hexagonal cross-section matched to the number of filament rod.

2. The apparatus as claimed in claim 1 , wherein each filament rod—except for the filament rods close to the reactor wall—has, at a distance of 250 to 350 mm, three further adjacent filament rods and one to three adjacent gas inlet orifices.

3. The apparatus as claimed in claim 1 , wherein a difference in distances of any filament rod from the three further adjacent filament rods and the adjacent gas inlet orifices is less than 50%.

4. The apparatus as claimed in claim 1 , wherein a difference in distances of any filament rod from the three further adjacent filament rods and the adjacent gas inlet orifices is less than 25%.

5. The apparatus as claimed in claim 1 , wherein a difference in distances of any filament rod from the three further adjacent filament rods and the adjacent gas inlet orifices is less than 10%.

6. The apparatus as claimed in claim 1 , wherein an angle between directions from any filament rod to its three further adjacent filament rods and to its adjacent gas inlet orifices is 90-150°.

7. The apparatus as claimed in claim 1 , wherein an angle between directions from any filament rod to its three further adjacent filament rods and to its adjacent gas inlet orifices is 105-135°.

8. The apparatus as claimed in claim 1 , wherein an angle between directions from any filament rod to its three further adjacent filament rods and to its adjacent gas inlet orifices is 115-125°.

9. The apparatus as claimed in claim 1 , wherein a length of the filament rods is 5 to 15 times a distance between adjacent rods.

10. The apparatus as claimed in claim 1 , wherein a length of the filament rods is 8 to 12 times a distance between adjacent rods.

11. The apparatus as claimed in claim 1 , wherein the gas inlet orifices are nozzles which are directed vertically upward with respect to a base plate of the reactor chamber.

12. The apparatus as claimed in claim 1 , wherein the gas inlet orifices have a cross-sectional area of 1 to 10,000 mm 2 .

13. The apparatus as claimed in claim 1 , wherein at least one gas inlet orifice central with respect to a cross-section of the reactor chamber is provided, with one or more offgas orifices positioned next to and around that at least one central gas inlet orifice and/or between the reactor wall and the filament rods close to the reactor wall.

14. The apparatus as claimed in claim 1 , wherein one or more cooling bodies and/or one or more heating elements are present in the reactor chamber, these being arranged above gas inlet orifices or being positioned in the reactor chamber in place of gas inlet orifices.

15. A process for depositing polycrystalline silicon on filament rods in an apparatus as claimed in claim 1 , wherein the gas inlet orifices are used to introduce a silicon-containing gas into the reactor chamber and the filament rods are heated to a temperature at which silicon is deposited thereon.

Assignees

• Sofin Mikhail
• Wacker Chemie Ag

Inventors

• Sofin Mikhail

Classifications

• C23C16/24 Primary

  Deposition of silicon only · CPC title

• C01B33/035 Primary

  by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title

• C30B31/10

  Reaction chambers; Selection of materials therefor · CPC title

• C30B29/06

  Silicon · CPC title