Method for depositing low temperature phosphorous-doped silicon
US-11781243-B2 · Oct 10, 2023 · US
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Reaction chambers; Selection of materials therefor
Reaction chambers; Selection of materials therefor · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B31/10 |
| Official title | Reaction chambers; Selection of materials therefor |
| Display label | Reaction chambers; Selection of materials therefor |
| Total patents | 6 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2017 | 1 |
| 2019 | 1 |
| 2021 | 1 |
| 2022 | 2 |
| 2023 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of decomposing quartz sample, method of analyzing metal contamination of quartz sample, and method of manufacturing quartz member
US-11421342-B2 · Aug 23, 2022 · US
Wafer boat structure, as well as wafer boat assembly and diffusion furnace with same
US-2022148899-A1 · May 12, 2022 · US
Method for depositing low temperature phosphorous-doped silicon
US-2021254238-A1 · Aug 19, 2021 · US
Method of decomposing quartz sample, method of analyzing metal contamination of quartz sample, and method of manufacturing quartz member
US-2019368071-A1 · Dec 5, 2019 · US
Apparatus for deposition of polycrystalline silicon comprising uniformly spaced filament rods and gas inlet orifices, and process for deposition of polycrystalline silicon using same
US-9534290-B2 · Jan 3, 2017 · US