Chalcogenide glass

Patent metadata

Field	Value
Publication number	US-9533912-B2
Application number	US-201214128713-A
Country	US
Kind code	B2
Filing date	Jun 29, 2012
Priority date	Jul 1, 2011
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

Boron-containing network sulfide glass which may be useful in IR transmitting applications, such as IR optics, laser or fiber amplifiers doped with rare earths with emission in the near IR, and methods of making the same.

First claim

What is claimed is:

1. A glass consisting essentially of, in atomic percent:
0-40 Ge;
0-40 As, Sb, or As+Sb;
0-15 Ga, In, or Ga+In;
0 P;
0-40 Te;
greater than 0 B, in an amount up to 20;
50-85 S, Se, or S+Se;
0-15 Tl, Pb, Bi, Sn, or combinations thereof; and
0-20 of an alkali metal, alkaline earth metal, rare earth metal, or combinations thereof,
wherein an amount of B or Ge+B included in the glass is non-stoichiometric with respect to an amount of S, Se, or S+Se included in the glass.

2. The glass according to claim 1 , wherein the glass is substantially homogenous.

3. The glass according to claim 1 , wherein the glass is substantially oxygen free.

4. The glass according to claim 1 , wherein the Tl, Pb, Bi, Sn, or combination thereof is present in an amount ranging from 0.05-15 atomic percent of Tl, Pb, Bi, Sn, or combinations thereof.

5. The glass according to claim 1 , wherein the alkali metal, alkaline earth metal, rare earth metal, or combination thereof is present in an amount ranging from 0.05-20 atomic percent of an alkali metal, alkaline earth metal, rare earth metal, or combinations thereof.

6. The glass according to claim 1 , comprising 0.05-4 atomic percent Ge.

7. The glass according to claim 1 , comprising 10-15 percent Ge.

8. The glass according to claim 1 , comprising 24-40 percent Ge.

9. The glass according to claim 1 , consisting essentially of, in atomic percent:
greater than 0 Ge, in an amount up to 40;
greater than 0 B, in an amount up to 20; and
50-85 S, Se, or S+Se.

10. The glass according to claim 1 , consisting essentially of, in atomic percent:
greater than 0 Ge, in an amount up to 40;
greater than 0 As, in an amount up to 40;
greater than 0 B, in an amount up to 20; and
50-85 Se, or S+Se.

11. The glass according to claim 1 , consisting essentially of, in atomic percent:
greater than 0 Ge, in an amount up to 40;
greater than 0 Ga, in an amount up to 15;
greater than 0 B, in an amount up to 20; and
50-85 S, Se, or S+Se.

12. The glass according to claim 1 , consisting essentially of, in atomic percent:
greater than 0 Ge, in an amount up to 40;
greater than 0 B, in an amount up to 20; and
50-85 S, Se, or S+Se.

13. A method for making a glass, the method comprising:
providing a precursor glass or crystalline material comprising in atomic percent
0-40 Ge;
0-40 As, Sb, or As+Sb;
0-15 Ga, In, or Ga+In;
0-15 P;
0-40 Te;
greater than 0 B, in an amount up to 25; and
50-85 S, Se, or S+Se
combining the precursor glass or crystalline material with elemental B; and
melting the precursor glass or crystalline material with elemental B to form the glass.

14. The method according to claim 13 , wherein the providing the precursor glass or crystalline material comprises forming a powder of the precursor glass or crystalline material.

15. The method according to claim 13 , wherein the melting comprises heating the precursor glass or crystalline material with elemental B in a carbon vessel contained in silica.

16. The method according to claim 15 , wherein the vessel is a carbon crucible contained in an evacuated silica ampoule.

17. The method according to claim 13 , wherein the melting comprises heating the precursor glass or crystalline material with elemental B in a silica ampoule comprising an inert gas.

18. The method according to claim 13 , wherein the melting comprises heating the precursor glass or crystalline material with elemental B in a silicon lined vessel.

19. The method according to claim 18 , wherein the vessel is a silicon lined fused silica vessel.

20. The method according to claim 13 , wherein the glass comprises in atomic percent:
0-40 Ge;
0-40 As;
0-15 Ga;
0-15 P;
0-40 Te;
greater than 0 B, in an amount up to 25; and
55-75 S, Se, or S+Se.

21. A glass consisting essentially of, in atomic percent:
0 Ge;
greater than 0 As, Sb, or As+Sb in an amount up to 40;
0-15 Ga, In, or Ga+In;
0 P;
0-40 Te;
greater than 0 B, in an amount up to 25;
50-85 S, Se, or S+Se;
0-15 Tl, Pb, Bi, Sn, or combinations thereof; and
0-20 of an alkali metal, alkaline earth metal, rare earth metal, or combinations thereof,
wherein an amount of B+(As, Sb, or As+Sb) included in the glass is non-stoichiometric with respect to an amount of S, Se, or S+Se included in the glass.

Assignees

• Aitken Bruce Gardiner
• Currie Stephen Charles
• Youngman Randall Eugene
• Corning Inc

Inventors

• Aitken Bruce Gardiner
• Currie Stephen Charles
• Youngman Randall Eugene

Classifications

• C03B5/08

  Glass-melting pots · CPC title

• C03B5/2252

  under reduced pressure, e.g. with vacuum refiners · CPC title

• C03C3/321 Primary

  Chalcogenide glasses, e.g. containing S, Se, Te · CPC title

• C03B5/06

  in pot furnaces {(C03B5/02 takes precedence)} · CPC title

• C03C4/10

  for infrared transmitting glass · CPC title