Monolithic ceramic component and production method

Patent metadata

Field	Value
Publication number	US-9532454-B2
Application number	US-15980907-A
Country	US
Kind code	B2
Filing date	Jan 3, 2007
Priority date	Jan 5, 2006
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and a second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

First claim

The invention claimed is:

1. A monolithic sintered component with monolithic multi-layer structure, comprising:
a functional layer comprising a functional ceramic,
a tension layer comprising a dielectric material directly adjacent to the functional layer in the multi-layer structure, the tension layer including a plurality of crystalline domains disposed in a matrix, the matrix including a recrystallized material,
a first metallization plane and a second metallization plane, the functional layer being between the first metallization plane and the second metallization plane,
electrically conductive structures, which form a component function together with the functional layer, in the first and second metallization planes, and
wherein the functional ceramic has a sintering temperature which lies above a phase-change temperature of the dielectric material.

2. The monolithic sintered component of claim 1 , wherein the functional layer comprises several metallization planes with electrically conductive structures.

3. The monolithic sintered component of claim 2 , wherein the multi-layer structure comprises solderable electrical contact surfaces including via contacts on a bottom side of the multi-layer structure, the via contacts being configured to electrically connect the solderable electrical contacts to the electrically conductive structures in the interior or on the surface of the multi-layer structure.

4. The monolithic sintered component of claim 1 , wherein the recrystallized material comprises a glass ceramic.

5. The monolithic sintered component of claim 4 , wherein the tension layer comprises a glass ceramic made from alkali borosilicate, alumoborosilicate, alumosilicate, lanthanum borate titanate, or alkaline earth lanthanum borate.

6. The monolithic sintered component of claim 1 , wherein the component function includes a function of a component type selected from the group consisting of a resistor, a capacitor, an inductor, a varistor, and a thermistor, and
the functional ceramic is selected based on the component type from a group of materials consisting of a resistor material, a capacitor ceramic, a ferrite, a varistor material, and PTC or NTC ceramic.

7. The monolithic sintered component of claim 6 , further comprising a discrete electrical component mounted on a surface of the film stack and electrically connected to the component.

8. The monolithic sintered component of claim 1 , wherein the phase-change or recrystallization temperature of the dielectric material is at least 50 kelvin less than the sintering temperature of the functional ceramic.

9. The monolithic sintered component of claim 1 , further comprising a plurality of tension layers, and
wherein functional layer and the plurality of tension layers are arranged in an alternating sequence.

10. The monolithic sintered component of claim 9 , wherein the multi-layer structure is symmetrical in the stack direction with respect to the layer sequence and layer thicknesses.

11. The monolithic sintered component of claim 1 , wherein a thickness of the tension layer is between 15 and 300 μm.

12. The monolithic sintered component of claim 1 , wherein the multi-layer structure further comprises additional layers or comprises multiple functional layers.

13. The monolithic sintered component of claim 1 , wherein the crystalline domains are insulated phases that include a material selected from the group consisting of Al 2 O 3 , TiO 2 , and ZrO 2 .

14. The monolithic sintered component of claim 1 , wherein the functional ceramic has a sintering temperature above 950° C.

15. The monolithic sintered component of claim 1 , wherein:
the functional layer comprises a green film;
the tension layer comprises a green film; and
the green film for the tension layer has a phase-change temperature below a sintering temperature of the functional ceramic and at which the green film transitions into a recrystallized phase that remains in a solid phase above the sintering temperature of the functional ceramic.

16. The monolithic sintered component of claim 1 , wherein the crystalline domains include a mineral oxide.

17. The monolithic sintered component of claim 1 , wherein the functional ceramic has a sintering temperature greater than or equal to about 1000° C.

18. The monolithic sintered component of claim 1 , wherein the tension layer has a thickness sufficient to tension the functional layer during sintering of the functional layer.

Assignees

• Block Christian
• Dudesek Pavol
• Feichtinger Thomas
• Hoffmann Christian
• Pudmich Guenter
• Epcos Ag

Inventors

• Block Christian
• Dudesek Pavol
• Feichtinger Thomas
• Hoffmann Christian
• Pudmich Guenter

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W42/20

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• C04B2237/366

  Aluminium nitride · CPC title