DBF film as a thermal interface material

Patent metadata

Field	Value
Publication number	US-9530718-B2
Application number	US-201213727409-A
Country	US
Kind code	B2
Filing date	Dec 26, 2012
Priority date	Dec 26, 2012
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A die backside film including a matrix material; and an amount of filler particles to render the die backside film thermally conductive, wherein a thermal conductivity of the amount of filler particles is greater than a thermal conductivity of silica particles. A method including introducing a die backside film on a backside surface of a die, the die backside film including a matrix material including an elastomer an amount of filler particles to render the die backside film thermally conductive, wherein a thermal conductivity of the amount of filler particles is greater than a thermal conductivity of silica particles; and disposing the die in a package.

First claim

What is claimed is:

1. A die backside film comprising:
a matrix material;
an amount of filler particles to render the die backside film thermally conductive, wherein a thermal conductivity of the amount of filler particles is greater than a thermal conductivity of silica particles; and
an adhesion promoter having a property operable to improve an adhesion of the die backside film to a die,
wherein the film comprises a post-cure elastic modulus range of 1 gigaPascal to 3 gigaPascals.

2. The die backside film of claim 1 , wherein the amount of filler particles comprise particles of at least one of silica, zinc oxide, alumina, aluminum, copper, silver and graphite, with the proviso that if an amount of filler particles comprises silica, a second amount of particles of zinc oxide, alumina, aluminum, copper, silver and graphite is also present.

3. The die backside film of claim 1 , wherein the matrix material comprises an epoxy resin and an elastomer.

4. The die backside film of claim 1 , wherein the adhesion promoter is represented by the following formula:
X—R1-Si—(OR 2 ) 3

wherein X is selected from the group consisting of an aryl moiety, an amine moiety and a thiol moiety;
R 1 is a C1-C6 saturated or unsaturated chain; and
R 2 is a C1-C2 alkyl,
wherein X is selected for its affinity to the filler particles.

5. A method comprising:
introducing a die backside film on a backside surface of a die, the die backside film comprising a matrix material comprising an elastomer, an amount of filler particles to render the die backside film thermally conductive and an adhesion promoter having a property operable to improve an adhesion of the die backside film to the die, wherein a thermal conductivity of the amount of filler particles is greater than a thermal conductivity of silica particles; and
disposing the die in a package,
wherein the film comprises a post-cure elastic modulus range of 1 gigaPascal to 3 gigaPascals.

6. The method of claim 5 , wherein the amount of filler particles comprise particles of at least one of silica, zinc oxide, alumina, aluminum, copper, silver and graphite, with the proviso that if an amount of filler particles comprises silica, a second amount of particles of zinc oxide, alumina, aluminum, copper, silver and graphite is also present.

7. The method of claim 5 , wherein the matrix material comprises an epoxy resin.

8. The method of claim 5 , wherein the adhesion promoter is represented by the following formula:
X—R1-Si—(OR 2 ) 3

wherein X is selected from the group consisting of an aryl moiety, an amine moiety and a thiol moiety;
R 1 is a C1-C6 saturated or unsaturated chain; and
R 2 is a C1-C2 alkyl,
wherein X is selected for its affinity to the filler particles.

9. An apparatus comprising:
a package comprising a microprocessor disposed in a carrier, the microprocessor comprising a first side and an opposite second side comprising a device side, the carrier comprising a plurality of conductive posts;
a die backside film on the first side of the microprocessor, comprising a matrix material comprising an elastomer, an amount of filler particles to render the die backside film thermally conductive and an adhesion promoter having a property operable to improve an adhesion of the die backside film to the microprocessor, wherein a thermal conductivity of the amount of filler particles is greater than a thermal conductivity of silica particles and wherein the film comprises a post-cure elastic modulus range of 1 gigaPascal to 3 gigaPascals; and
a printed circuit board coupled to at least a portion of the plurality of conductive posts of the carrier.

10. The apparatus of claim 9 , wherein the amount of filler particles of the die backside film comprise particles of at least one of silica, zinc oxide, alumina, aluminum, copper, silver and graphite, with the proviso that if an amount of filler particles comprises silica, a second amount of particles of zinc oxide, alumina, aluminum, copper, silver and graphite is also present.

11. The apparatus of claim 9 , wherein the adhesion promoter is represented by the following formula:
X—R1-Si—(OR 2 ) 3

wherein X is selected from the group consisting of an aryl moiety, an amine moiety and a thiol moiety;
R 1 is a C1-C6 saturated or unsaturated chain; and
R 2 is a C1-C2 alkyl,
wherein X is selected for its affinity to the filler particles.

Assignees

• Arora Hitesh
• Oka Mihir A
• Jha Chandra M
• Intel Corp

Inventors

• Arora Hitesh
• Oka Mihir A
• Jha Chandra M

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W42/121

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H10W74/131

  the semiconductor body being only partially enclosed · CPC title

• H10W74/127

  characterised by arrangements for sealing or adhesion · CPC title

• H10W40/251 Primary

  Organics · CPC title