Device including two power semiconductor chips and manufacturing thereof
US-8975711-B2 · Mar 10, 2015 · US
US9530707B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9530707-B2 |
| Application number | US-201514877389-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 7, 2015 |
| Priority date | Oct 3, 2013 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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A semiconductor module includes a printed circuit board having an insulating plate, first and fourth wiring layers disposed on a principal surface of the insulating plate, second and third wiring layers disposed on another surface opposite to the principal surface, a first via disposed in the insulating plate and electrically and mechanically connected to the first and third wiring layers, and a second via disposed in the insulating plate and electrically and mechanically connected to the second and fourth wiring layers; a first insulating substrate disposed with a first circuit plate; a second insulating substrate disposed with a second circuit plate; a first semiconductor chip; a second semiconductor chip; a first heat release member fixed between the third wiring layer and the third circuit plate; and a second heat release member fixed between the fourth wiring layer and the first circuit plate.
Opening claim text (preview).
What is claimed is: 1. A semiconductor module, comprising: a printed circuit board having an insulating plate, a first wiring layer and a fourth wiring layer disposed on a principal surface of the insulating plate, a second wiring layer and a third wiring layer disposed on a surface opposite to the principal surface, a first via disposed in the insulating plate, and electrically and mechanically connected to the first wiring layer and third wiring layer, and a second via disposed in the insulating plate, and electrically and mechanically connected to the second wiring layer and the fourth wiring layer; a first insulating substrate disposed facing the first wiring layer, and having a first circuit plate on a surface facing the first wiring layer and the fourth wiring layer; a second insulating substrate disposed facing the second wiring layer, and having a second circuit plate facing the second wiring layer and a third circuit plate facing the third wiring layer; a first semiconductor chip sandwiched between the first wiring layer and the first circuit plate, and having a conductive joining material on two surfaces to fix to the first wiring layer and the first circuit plate; a second semiconductor chip sandwiched between the second wiring layer and the second circuit plate, and having a conductive joining material on two surfaces to fix to the second wiring layer and second circuit plate; a first heat release member sandwiched and fixed between the third wiring layer and the third circuit plate; and a second heat release member sandwiched and fixed between the fourth wiring layer and the first circuit plate. 2. The semiconductor module according to claim 1 , wherein the first via on the insulating plate has an area of 10% or more relative to an area of the first semiconductor chip. 3. The semiconductor module according to claim 1 , wherein the second via on the insulating plate has an area of 10% or more relative to an area of the second semiconductor chip. 4. The semiconductor module according to claim 1 , wherein the first heat release member and the second heat release member are a conductive joining material or a metal plate. 5. The semiconductor module according to claim 1 , wherein the second circuit plate and the third circuit plate are integrally formed, and the first heat release member is formed from a high thermal conductive insulator. 6. The semiconductor module according to claim 1 , further comprising a metal plate disposed on a surface, of the second insulating substrate, opposite to a surface disposed with the second circuit plate. 7. The semiconductor module according to claim 1 , further comprising a metal plate disposed on a surface, of the first insulating substrate, opposite to the surface disposed with the first circuit plate. 8. The semiconductor module according to claim 1 , wherein the first via and the second via are columnar conductors filled inside each of a plurality of through holes disposed in the insulating plate of the printed circuit board. 9. The semiconductor module according to claim 1 , wherein each of the joining materials and heat release members is a solder. 10. The semiconductor module according to claim 1 , further comprising an external terminal electrically connected to the first wiring layer or second wiring layer.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
characterised by arrangements for thermal management of the stacked chips · CPC title
the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL · CPC title
Configurations of stacked chips · CPC title
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