Temperature control in RF chamber with heater and air amplifier

Patent metadata

Field	Value
Publication number	US-9530656-B2
Application number	US-201313851793-A
Country	US
Kind code	B2
Filing date	Mar 27, 2013
Priority date	Oct 7, 2011
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.

First claim

What is claimed is:

1. A semiconductor manufacturing apparatus comprising:
an air amplifier coupled to pressurized gas, the air amplifier generating a flow of air when activated;
a heater coupled to the air amplifier, wherein the flow of air is heated when the heater is activated for processing in the plasma chamber;
a duct connected to an output of the heater;
a plenum disposed over a window of a plasma chamber, the plenum forms a partial enclosure having a top surface and…

Assignees

• Lam Res Corp

Inventors

• Mcchesney Jon
• Paterson Alex

Classifications

• H10P50/242

  Electricity · mapped topic

• H01J2237/334

  Electricity · mapped topic

• H01J2237/002

  Electricity · mapped topic

• H01J37/32238

  Electricity · mapped topic

• H01J37/3211

  Electricity · mapped topic