Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-9530641-B2
Application number	US-201314647290-A
Country	US
Kind code	B2
Filing date	Nov 11, 2013
Priority date	Nov 26, 2012
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

There is provided a method for manufacturing a semiconductor device, including: forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a prescribed number of times, the a cycle including:
(a) supplying a source gas to the substrate in a process chamber through a first nozzle;
(b) exhausting the source gas remained in the process chamber;
(c) supplying a reactive gas to the substrate in the process chamber through a second nozzle; and
(d) exhausting the reactive gas remained in the process chamber,
wherein in (a),
the source gas is supplied into the process chamber through the first nozzle when exhaust of the process chamber is substantially stopped, and thereafter
an inert gas is supplied into the process chamber through the first nozzle with a larger flow rate than a flow rate at the time of supplying the source gas, that when the exhaust of the process chamber and supply of the source gas are substantially stopped, and a time for supplying the inert gas when the exhaust of the process chamber and the supply of the source gas are substantially stopped becomes longer than a time for supplying the source gas.

2. The method of claim 1 , wherein in (a), pressure in the process chamber is set to be higher than pressure in the process chamber in (c).

3. The method of claim 1 , wherein in (a), pressure in the process chamber is set to be higher than pressure in the process chamber in (b), (c), and (d).

4. The method of claim 1 , wherein in (a), the exhaust of the process chamber is stopped, when the source gas is supplied, and when the inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

5. The method of claim 1 , wherein in (a), an exhaust stopped state of the process chamber is maintained, when the source gas is supplied, and when the inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

6. The method of claim 1 , wherein
in (b), the source gas remained in the process chamber is exhausted from an exhaust pipe in which an exhaust valve is provided, and
in (a), a substantially closed state of the exhaust valve provided in the exhaust pipe is maintained, when the source gas is supplied, and when an inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

7. The method of claim 6 , wherein in (a), the exhaust valve is closed, when the source gas is supplied, and when the inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

8. The method of claim 6 , wherein in (a), a closed state of the exhaust valve is maintained, when the source gas is supplied, and when the inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

9. The method of claim 6 , wherein in (a), the exhaust valve is slightly opened so that an exhaust rate of a gas supplied into the process chamber is smaller than a supply rate of the gas supplied into the process chamber, when the source gas is supplied, and when the inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

10. The method of claim 1 , wherein
an inert gas is supplied into the process chamber when the source gas is supplied into the process chamber, and
a flow rate of the inert gas supplied into the process chamber in a substantially stopped state of exhaust of the process chamber and supply of the source gas, is set to be larger than a flow rate of the inert gas supplied into the process chamber when the source gas is supplied into the process chamber.

11. The method of claim 1 , wherein the source gas includes amino-groups.

12. The method of claim 1 , wherein in (a), the process chamber is slightly exhausted so that an exhaust rate of a gas supplied into the process chamber is smaller than a supply rate of the gas supplied into the process chamber, when the source gas is supplied, and when the inert gas is supplied, the exhaust of the process chamber and the supply of the source gas are substantially stopped.

13. The method of claim 1 , wherein the first nozzle contains a long nozzle that rises from a lower part of the process chamber to an arrangement region of the substrate.

14. The method of claim 1 , wherein in the formation of the film on the substrate, a temperature of the substrate is set to a room temperature or more and 200□C or less.

15. The method of claim 1 , wherein in the formation of the film on the substrate, a temperature of the substrate is set to a room temperature.

16. A non-transitory computer readable recording medium recording a program configured to cause a substrate processing apparatus to execute forming a film on a substrate by performing a cycle a prescribed number of times by a computer, the cycle including:
(a) supplying a source gas to the substrate in a process chamber of the substrate processing apparatus through a first nozzle;
(b) exhausting the source gas remained in the process chamber;
(c) supplying a reactive gas to the substrate in the process chamber through a second nozzle; and
(d) exhausting the reactive gas remained in the process chamber,
wherein in (a),
the program is configured to cause the substrate processing apparatus to execute procedure by computer, the procedure including;
supplying the source gas into the process chamber through the first nozzle when exhaust of the process chamber is substantially stopped, and thereafter
supplying an inert gas into the process chamber through the first nozzle with a larger flow rate than a flow rate at the time of supplying the source gas, so that a time for supplying the inert gas during which the exhaust of the process chamber and supply of the source gas are substantially stopped becomes longer than a time for supplying the source gas.

17. A method for manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including:
(a) supplying a source gas to the substrate in a process chamber through a first nozzle;
(b) exhausting the source gas remained in the process chamber;
(c) supplying a reactive gas to the substrate in the process chamber through a second nozzle; and
(d) exhausting the reactive gas remained in the process chamber,
wherein in (a),
supplying the source gas into the process chamber through the first nozzle when exhaust of the process chamber is substantially stopped, and thereafter
supplying an inert gas into the process chamber through the first nozzle with a larger flow rate than a flow rate at the time of supplying the source gas when the exhaust of the process chamber and supply of the source gas are substantially stopped,
are repeated multiple number of times.

18. A method for manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including:
(a) supplying a source gas to the substrate in a process chamber through a first nozzle;
(b) exhausting the source gas remained in the process chamber;
(c) supplying a reactive gas to the substrate in the process chamber through a second nozzle; and
(d) exhausting the reactive gas remained in the process chamber,
wherein in (a),
the source gas is supplied into the process chamber with a first flow rate through the first nozzle when exhaust of the process chamber is substantially stopped, and thereafter

Assignees

• Hitachi Int Electric Inc

Inventors

• Hanashima Takeo
• Wang Jie
• Noda Takaaki

Classifications

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title