Method of preparing ZnO nanowire and ZnO nanowire prepared thereby

Patent metadata

Field	Value
Publication number	US-9530639-B2
Application number	US-201414537207-A
Country	US
Kind code	B2
Filing date	Nov 10, 2014
Priority date	Mar 28, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

A method of preparing a ZnO nanowire, and a ZnO nanowire prepared by the method are provided. The method of preparing a ZnO nanowire includes: preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent; applying the zinc chalcogenide solution onto a substrate; drying the zinc chalcogenide solution applied onto the substrate; and annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution.

First claim

What is claimed is:

1. A method of preparing a ZnO nanowire, the method comprising:
preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent;
applying the zinc chalcogenide solution onto a substrate;
drying the zinc chalcogenide solution applied onto the substrate; and
annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution,
wherein the preparing the zinc chalcogenide solution is performed via dimensional reduction of the zinc chalcogenide and comprises:
dissolving a chalcogen in the solvent to obtain a chalcogen solution;
adding the zinc chalcogenide to the chalcogen solution to obtain a first slurry;
heating the first slurry to dissolve the zinc chalcogenide in the chalcogen solution, thereby obtaining a second slurry including a zinc chalcogenide solution; and
filtering the second slurry.

2. The method of claim 1 , wherein the zinc chalcogenide is a p-type semiconductor.

3. The method of claim 1 , wherein the zinc chalcogenide comprises ZnTe, ZnSe, ZnS, or a combination thereof.

4. The method of claim 1 , wherein the solvent comprises hydrazine, hydrazine hydrate, methyl hydrazine, dimethyl hydrazine, ethylenediamine, 1,3-diaminopropane, phenylenediamine, ethylamine, propylamine, diethylamine, or a combination thereof.

5. The method of claim 1 , wherein the chalcogen comprises tellurium (Te), selenium (Se), sulfur (S), or a combination thereof.

6. The method of claim 1 , wherein the heating of the first slurry is performed at a temperature of from about 70° C. to about 200° C.

7. The method of claim 1 , wherein the preparing the zinc chalcogenide solution further comprises:
adding the filtered second slurry in an excess of a cleaning solvent to obtain a third slurry in which the zinc chalcogenide is precipitated;
filtering the third slurry to separate the precipitated zinc chalcogenide from the third slurry; and
dissolving the separated zinc chalcogenide in the solvent.

8. The method of claim 7 , wherein the cleaning solvent comprises methanol, ethanol, butanol, isopropanol, acetone, or a combination thereof.

9. The method of claim 1 , wherein a concentration of the zinc chalcogenide in the zinc chalcogenide solution is in a range of from about 10 −6 M to about 10M.

10. The method of claim 1 , wherein the applying the zinc chalcogenide solution onto the substrate comprises dropping the zinc chalcogenide solution onto the substrate, or dropping the zinc chalcogenide solution onto the substrate and spin-coating the same on the substrate.

11. The method of claim 1 , wherein the drying the zinc chalcogenide solution is performed at a temperature of from about 70° C. to about 200° C.

12. The method of claim 1 , wherein the annealing the substrate is performed in air.

13. The method of claim 1 , wherein the annealing the substrate is performed at a temperature of from about 100° C. to about 300° C.

14. The method of claim 1 , wherein the ZnO nanowire resulting from the annealing the substrate in the presence of oxygen is a free-standing nanowire that is not adhered to the substrate.

15. A ZnO nanowire prepared by the method of claim 1 and represented ZnX α O β ,
wherein X is tellurium (Te), selenium (Se), or sulfur (S);
α is a real number of from 0 to 0.95; and
β is a real number of from 0.05 to 1.

16. The ZnO nanowire of claim 15 , wherein the ZnO nanowire does not comprise an organic ligand.

17. The ZnO nanowire of claim 15 , wherein the ZnO nanowire is an n-type semiconductor.

Assignees

• Samsung Electronics Co Ltd
• Ajou Univ Industry-Academic Coop Found

Inventors

• Cho Kyunghoon
• Kim Sangwook
• Choi Donghyeok

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/203 Primary

  using transformation of metal, e.g. oxidation or nitridation · CPC title