Method for cleaning titanium alloy deposition

Patent metadata

Field	Value
Publication number	US-9530627-B2
Application number	US-201414484423-A
Country	US
Kind code	B2
Filing date	Sep 12, 2014
Priority date	Sep 26, 2013
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.

First claim

The invention claimed is:

1. A method for cleaning N-Metal film deposits in a processing chamber, the method comprising:
positioning a dummy substrate on a substrate support in the processing chamber;
heating the processing chamber to over at least 50 degrees Celsius and less than 500 degrees Celsius;
flowing chlorine gas into the processing chamber to remove the N-metal film deposits from the processing chamber; and
evacuating the chlorine gas from the processing chamber.

2. The method of claim 1 , wherein heating the processing chamber comprises:
flowing a fluid in a fluid channel of a lid and sidewalls of the processing chamber.

3. The method of claim 1 , wherein heating the processing chamber comprises:
energizing heater cartridges embedded in sidewalls of the processing chamber.

4. The method of claim 1 , wherein flowing chlorine gas further comprises:
flowing chlorine gas at a rate of at least 500 sccm into the processing chamber.

5. The method of claim 4 further comprising:
flowing argon gas with the chlorine gas into the processing chamber.

6. The method of claim 1 , wherein flowing chlorine gas further comprises:
flowing chlorine gas at a rate of about 1000 sccm into the processing chamber.

7. The method of claim 1 further comprising:
maintaining a chamber pressure greater than about 5 Torr while flowing the chlorine gas into the processing chamber.

8. The method of claim 1 further comprising:
removing the dummy substrate from the processing chamber;
positioning a substrate in the processing chamber after the dummy substrate has been removed; and
depositing a layer of N-Metal on the substrate disposed in the processing chamber.

9. The method of claim 8 , wherein depositing the layer of N-Metal on the substrate further comprises:
maintaining the processing chamber at a pressure less than that utilized to remove the N-Metal film deposits.

10. The method of claim 1 further comprising:
detecting the chlorine gas in a delivery line using an infrared based scanning electron microscope.

11. A method for cleaning N-Metal film deposits in a processing chamber, the method comprising:
depositing a layer of N-Metal on a substrate disposed on a substrate support positioned in the processing chamber;
removing the substrate from the processing chamber;
positioning a dummy substrate on the substrate support; and
performing a cleaning process while the dummy substrate is disposed in the processing chamber, the cleaning process comprising:
heating the processing chamber to over at least 50 degrees Celsius and less than 500 degrees Celsius; and
flowing chlorine gas into the processing chamber to remove the N-metal film deposits from the processing chamber.

12. The method of claim 11 , wherein flowing chlorine gas further comprises:
flowing chlorine gas at a rate of at least 500 sccm into the processing chamber.

13. The method of claim 12 further comprising:
flowing argon gas with the chlorine gas into the processing chamber.

14. The method of claim 11 further comprising:
maintaining a chamber pressure greater than about 5 Torr while flowing the chlorine gas into the processing chamber.

15. The method of claim 11 , wherein depositing the layer of N-Metal on the substrate further comprises:
maintaining the processing chamber at a pressure less than that utilized to remove the N-Metal film deposits from the processing chamber.

16. The method of claim 11 further comprising:
detecting the chlorine gas in a delivery line using an infrared based scanning electron microscope.

17. The method of claim 11 further comprising:
adjusting between deposition and cleaning, at least one or both of:
(a) a temperature of at least one of the sidewall and a lid of the processing chamber; and
(b) a pressure of gases disposed within the processing chamber.

18. A method for cleaning N-Metal film deposits in a processing chamber, the method comprising:
positioning a dummy substrate on a substrate support in the processing chamber;
heating the processing chamber to over at least 50 degrees Celsius, wherein heating the processing chamber comprises:
heating the processing chamber to between about 70 degrees Celsius to about 100 degrees Celsius;

flowing chlorine gas into the processing chamber to remove the N-metal film deposits from the processing chamber; and
evacuating the chlorine gas from the processing chamber.

19. A method for cleaning N-Metal film deposits in a processing chamber, the method comprising:
depositing a layer of N-Metal on a substrate disposed on a substrate support positioned in the processing chamber, wherein depositing the layer of N-Metal on the substrate comprises:
depositing a layer of titanium aluminide;

removing the substrate from the processing chamber;
positioning a dummy substrate on the substrate support; and
performing a cleaning process while the dummy substrate is disposed in the processing chamber, the cleaning process comprising:
heating the processing chamber to over at least 50 degrees Celsius; and
flowing chlorine gas into the processing chamber to remove the N-metal film deposits from the processing chamber.

20. A method for cleaning N-Metal film deposits in a processing chamber, the method comprising:
depositing a layer of N-Metal on a substrate disposed on a substrate support positioned in the processing chamber;
removing the substrate from the processing chamber;
positioning a dummy substrate on the substrate support; and
performing a cleaning process while the dummy substrate is disposed in the processing chamber, the cleaning process comprising:
heating the processing chamber to over at least 50 degrees Celsius, wherein heating the processing chamber comprises;
heating the processing chamber to between about 70 degrees Celsius to about 100 degrees Celsius; and
flowing chlorine gas into the processing chamber to remove the N-metal film deposits from the processing chamber.

Assignees

• Applied Materials Inc

Inventors

• Gandikota Srinivas
• Lu Xinliang
• Bu Kyoung-Ho
• Zhou Jing
• Ganguli Seshadri
• Thompson David

Classifications

• C23C16/4405

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• H01J37/32724

  Temperature · CPC title

• H01J37/32522

  Temperature · CPC title

• H01J37/32862 Primary

  In situ cleaning of vessels and/or internal parts · CPC title

• C23C16/08

  from metal halides · CPC title