Chucking system with recessed support feature

Patent metadata

Field	Value
Publication number	US-9529274-B2
Application number	US-201414570651-A
Country	US
Kind code	B2
Filing date	Dec 15, 2014
Priority date	Jul 2, 2009
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

In an imprint lithography system, a recessed support on a template chuck may alter a shape of a template positioned thereon providing minimization and/or elimination of premature downward deflection of outer edges of the template in a nano imprint lithography process.

First claim

What is claimed is:

1. An imprint lithography substrate chucking system, comprising:
a substrate chuck having a holding support section and a recessed support section, the recessed support section cincturing the holding support section, with
the holding support section having a plurality of lands for supporting a substrate, the lands extending a first height from the substrate chuck, and
the recessed support section having at least one recessed land for supporting the substrate, the recessed land extending a second height from the substrate chuck, wherein the second height is substantially less than the first height and wherein the height of the recessed land is configured to provide physical clearance of the substrate positioned thereon from a template positioned in superimposition with the substrate.

2. The chucking system of claim 1 , wherein the recessed land of the recessed support section extends from an outer edge of the substrate chuck.

3. The chucking system of claim 1 , further comprising a plurality of chambers formed between the recessed land of the recessed support section, lands of the holding support section, and portions of the substrate wherein the substrate is positioned on the substrate chuck.

4. The chucking system of claim 3 , wherein the plurality of chambers is configured to provide three zones: an outer bend zone, a hold zone, and a back pressure zone.

5. The chucking system of claim 4 , further comprising a pressure system in fluid communication with each chamber.

6. The chucking system of claim 1 , wherein the height of the recessed land as compared to the height of the lands of the holding support section is configured to reduce stress of the substrate positioned thereon.

7. The chucking system of claim 1 , wherein dimensions of the lands of the holding support section are configured to substantially flatten the substrate positioned thereon.

8. The chucking system of claim 1 , wherein the height of the recessed land is configured to provide outer edges of the substrate positioned thereon to curve towards the substrate chuck.

9. An imprint lithography substrate chucking system, comprising:
a substrate chuck having a back pressure zone;
a hold zone cincturing the back pressure zone; and
an outer bend zone cincturing the hold zone,
the hold zone having a plurality of lands for supporting a substrate, each land extending a height from the substrate chuck, and the outer bend zone having a recessed land positioned on an outer boundary of the substrate chuck, the recessed land extending from the substrate chuck a height substantially less than the height of the lands in the hold zone and wherein the substrate is positioned on the substrate chuck, and wherein the substrate is in superimposition with a template coupled to a template chuck, the template chuck having at least one recessed land positioned on an outer edge of the template chuck.

10. The chucking system of claim 9 , further comprising the substrate positioned on the substrate chuck wherein the height of the recessed land, as compared to the height of the lands of the hold zone, is configured to reduce stress of the substrate positioned thereon.

11. The chucking system of claim 9 , wherein dimensions of the lands of the hold zone are configured to substantially flatten the substrate positioned thereon.

12. The chucking system of claim 9 , wherein the back pressure zone, the hold zone, and the outer bend zone are in fluid communication with a pressure system.

13. An imprint lithography substrate chucking system, comprising:
a substrate chuck having a body having a holding support section and a recessed support section, the recessed support section cincturing the holding support section, with
the holding support section having a plurality of lands for supporting a substrate, the lands extending a first height from the substrate chuck body, and
the recessed support section having at least one recessed land at the outer edge of the substrate chuck, the recessed land extending from an outer edge of the substrate chuck body a second height from the substrate chuck body, with the second height being substantially less than the first height; and
a fluid pressure system configured to control pressure within distinct chambers formed between the recessed land of the recessed support section, the lands of the holding support section, and portions of the substrate when the substrate is positioned on the substrate chuck.

14. The chucking system of claim 13 wherein the pressure system is configured to independently apply pressure or vacuum force to the chambers.

15. The chucking system of claim 13 , wherein the chambers are configured to provide three zones: an outer bend zone, a hold zone, and a back pressure zone.

16. The chucking system of claim 13 , wherein the height of the recessed land as compared to the height of the lands of the holding support section is configured to reduce stress of the substrate positioned thereon.

17. The chucking system of claim 13 , wherein dimensions of the lands of the holding support section are configured to substantially flatten the substrate positioned thereon.

18. The chucking system of claim 13 , wherein the height of the recessed land is configured to provide outer edges of the substrate positioned thereon to curve towards the substrate chuck.

19. An imprint lithography substrate chucking system, comprising:
a substrate chuck having a holding support section and a recessed support section, the recessed support section cincturing the holding support section, with
the holding support section having a plurality of lands for supporting a substrate, the lands extending a first height from the substrate chuck, and
the recessed support section having at least one recessed land for supporting the substrate, the recessed land extending a second height from the substrate chuck, wherein the second height is substantially less than the first height, and
a plurality of distinct chambers formed between the recessed land of the recessed support section, lands of the holding support section, and portions of the substrate wherein the substrate is positioned on the substrate chuck.

20. The chucking system of claim 19 , wherein the recessed land of the recessed support section extends from an outer edge of the substrate chuck.

21. The chucking system of claim 19 , wherein the plurality of chambers is configured to provide three zones: an outer bend zone, a hold zone, and a back pressure zone.

22. The chucking system of claim 21 , further comprising a pressure system in fluid communication with each chamber.

23. The chucking system of claim 19 , wherein the height of the recessed land is configured to provide physical clearance of the substrate positioned thereon from a template positioned in superimposition with the substrate.

24. The chucking system of claim 19 , wherein the height of the recessed land as compared to the height of the lands of the holding support section is configured to reduce stress of the substrate positioned thereon.

25. The chucking system of claim 19 , wherein dimensions of the lands of the holding support section are configured to substantially flatten the substrate positioned thereon.

26. The chucking system of claim 19 , wherein the height of the recessed land is configured to provide outer edges of the positioned thereon to curve towards the substrate chuck.

Assignees

• Canon Nanotechnologies Inc
• Molecular Imprints Inc

Inventors

• Ganapathisubramanian Mahadevan
• Meissl Mario Johannes
• Panga Avinash
• Choi Byung-Jin

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G03F7/7035 Primary

  Proximity or contact printers · CPC title

• B25B11/005

  Vacuum work holders · CPC title

• G03F7/70375

  Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title