Programmable photolithography

Patent metadata

Field	Value
Publication number	US-9454086-B2
Application number	US-201214351465-A
Country	US
Kind code	B2
Filing date	Oct 15, 2012
Priority date	Oct 14, 2011
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A method of programmable photolithography includes positioning ( 910 ) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated ( 920 ) with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern. The programmable photomask is separated ( 930 ) from the photoresist layer and the photoresist layer is developed ( 940 ) to create the predetermined pattern in the photoresist layer.

First claim

What is claimed is:

1. A method of programmable photolithography, comprising:
positioning a programmable contact photomask in proximity to a photoresist layer on a sample;
illuminating the programmable contact photomask with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern;
separating the programmable contact photomask from the photoresist layer wherein the separating the programmable contact photomask allows for repeated reuse of the programmable contact photomask; and
developing the photoresist layer to create the predetermined pattern in the photoresist layer.

2. The method of claim 1 , further comprising moving the programmable contact photomask and the sample relative to one another, and illuminating the programmable contact photomask with the plurality of different wavelengths of light.

3. The method of claim 1 , further comprising ceasing to illuminate the programmable contact photomask with the plurality of different wavelengths of light for a predetermined period of time to allow the programmable contact photomask to return to a pre-illumination state.

4. The method of claim 1 , further comprising illuminating the programmable contact photomask with an individual of the plurality of different wavelengths of light to restore the programmable contact photomask to a pre-illumination state.

5. The method of claim 1 , wherein the programmable contact photomask comprises an absorbance modulation layer configured to change opacity when illuminated by one of the plurality of different wavelengths of light.

6. The method of claim 5 , wherein the absorbance modulation layer is a bistable absorbance modulation layer configured to return to or maintain an original opacity when illuminated by another one of the plurality of different wavelengths of light.

7. The method of claim 5 , wherein the programmable contact photomask further includes a transparent mask substrate, which is transparent to the plurality of different wavelengths of light.

8. The method of claim 1 , further comprising redirecting the plurality of different wavelengths of light to a different position on the contact photomask photomask.

9. The method of claim 1 , wherein the step of illuminating further comprises overlapping the plurality of different wavelengths of light and wherein the predetermined pattern is exposed at a portion of the programmable contact photomask illuminated by one of the plurality of different wavelengths of light in a region of non-overlap by another of the plurality of different wavelengths of light.

10. The method of claim 1 , wherein the predetermined pattern comprises a dot shape and the step of illuminating the programmable contact photomask with the plurality of different wavelengths of light comprises illuminating the programmable contact photomask with a ring-shaped pattern of one of the plurality of different wavelengths of light.

11. The method of claim 1 , wherein the developing the photoresist layer to create the predetermined pattern further comprises alternately and repeatedly exposing the photoresist layer and recovering and reprogramming the programmable contact photomask.

12. A programmable photolithography system, comprising:
a sample stage configured to support a sample;
a programmable contact photomask comprising an absorbance modulation layer supported over the sample stage wherein the programmable contact photomask allows for repeated reuse of the programmable contact photomask;
a first light source configured to direct light of a first wavelength toward the absorbance modulation layer; and
a second light source configured to direct light of a second wavelength toward the absorbance modulation layer simultaneously with the first wavelength of light from the first light source.

13. The system of claim 12 , further comprising a transmissive spatial light modulator in a path of the light from the second light source configured to pattern the light from the second light source.

14. The system of claim 13 , wherein the light from the first light source is unpatterned.

15. The system of claim 12 , further comprising a dichroic beam combiner for combining the first and second wavelengths of light.

16. The system of claim 12 , wherein the absorbance modulation layer is supported by a transparent mask substrate, which is transparent to the first and second wavelength of light.

17. The system of claim 12 , wherein the light from the second light source is directed toward the absorbance modulation layer at an angle relative to a direction at which the light from the first light source is directed toward the absorbance modulation layer.

18. The system of claim 12 , further comprising a heat source configured to heat the absorbance modulation layer to restore an original state of the absorbance modulation layer before illumination from the first light source.

19. A method of programmable photolithography, comprising:
positioning a programmable contact photomask in contact with a photoresist layer on a sample;
illuminating the programmable contact photomask with a plurality of different wavelengths of light simultaneously to expose the photoresist layer and the sample in a predetermined pattern, said photomask including a transparent mask substrate supporting an absorbance modulation layer configured to change opacity when illuminated by at least one of the plurality of different wavelengths of light; and
separating the programmable contact photomask from the photoresist layer wherein the separating the programmable contact photomask allows for repeated reuse of the programmable contact photomask.

20. The method of claim 19 , further comprising:
restoring the programmable contact photomask to a pre-illumination state after the separating the programmable contact photomask; and
developing the photoresist layer to create the predetermined pattern in the photoresist layer.

Assignees

• Univ Utah Res Found

Inventors

• Menon Rajesh

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/70

  Microphotolithographic exposure; Apparatus therefor (photo-masks G03F1/00) · CPC title

• G03F7/2051

  Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source (G03F7/70 takes precedence) · CPC title

• G03F7/7035

  Proximity or contact printers · CPC title

• G03F7/70291 Primary

  Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices · CPC title