Systems and methods for forming nanowires using anodic oxidation

Patent metadata

Field	Value
Publication number	US-9528194-B2
Application number	US-201414315421-A
Country	US
Kind code	B2
Filing date	Jun 26, 2014
Priority date	Mar 31, 2014
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.

First claim

What is claimed is:

1. A method for forming one or more nanowires on a substrate, the method comprising:
forming a first protruding structure on the substrate;
placing the substrate including the first protruding structure in an electrolytic solution; and
forming the one or more nanowires inside the first protruding structure by oxidizing the first protruding structure, wherein the first protruding structure is oxidized via an anodic oxidation that uses the substrate as part of an anode electrode, the one or more nanowires being surrounded by a first dielectric material formed during the anodic oxidation, and wherein the oxidizing of the first protruding structure comprises oxidizing a bottom portion of the first protruding structure at a higher rate than a top portion of the first protruding structure.

2. The method of claim 1 , wherein the anode electrode further includes a conductive material configured to be electrically connected to a power supply and be in contact with the substrate.

3. The method of claim 1 , wherein:
the anode electrode further includes a conductive material and a metal electrode, the metal electrode being disposed between the substrate and the conductive material; and
the conductive material is configured to be electrically connected to a power supply and be in contact with the substrate and the metal electrode.

4. The method of claim 1 , wherein:
the first protruding structure has a width and a height;
an aspect ratio of the first protruding structure is equal to the height divided by the width; and
the aspect ratio is larger than an aspect-ratio threshold.

5. The method of claim 1 , wherein the performing anodic oxidation using the substrate as part of the anode electrode includes:
performing a first oxidation process to oxidize part of the first protruding structure using the substrate as part of the anode electrode;
forming a metal material on the partially oxidized first protruding structure; and
performing a second oxidation process to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

6. The method of claim 1 , wherein the performing anodic oxidation using the substrate as part of the anode electrode includes:
forming a metal material on the first protruding structure; and
performing the anodic oxidation to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

7. The method of claim 1 , wherein one or more second protruding structures are formed on the substrate for nanowire formation through the anodic oxidation.

8. A method for forming one or more nanowires on a substrate, the method comprising:
forming a first protruding structure on the substrate;
placing the substrate including the first protruding structure in an electrolytic solution; and
forming the one or more nanowires inside the first protruding structure by oxidizing the first protruding structure, wherein the first protruding structure is oxidized via an anodic oxidation that uses the substrate as part of an anode electrode, the one or more nanowires being surrounded by a first dielectric material formed during the anodic oxidation, and the anode electrode being configured to be electrically connected to a power supply and to be in contact with the substrate, and wherein the oxidizing of the first protruding structure comprises oxidizing a bottom portion of the first protruding structure at a higher rate than a top portion of the first protruding structure.

9. The method of claim 8 , wherein:
the anode electrode further includes a conductive material and a metal electrode, the metal electrode being disposed between the substrate and the conductive material; and
the conductive material is configured to be electrically connected to a power supply and be in contact with the substrate and the metal electrode.

10. The method of claim 8 , wherein:
the first protruding structure has a width and a height;
an aspect ratio of the first protruding structure is equal to the height divided by the width; and
the aspect ratio is larger than an aspect-ratio threshold.

11. The method of claim 8 , wherein the performing anodic oxidation using the substrate as part of the anode electrode includes:
performing a first oxidation process to oxidize part of the first protruding structure using the substrate as part of the anode electrode;
forming a metal material on the partially oxidized first protruding structure; and
performing a second oxidation process to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

12. The method of claim 8 , wherein the performing anodic oxidation using the substrate as part of the anode electrode includes:
forming a metal material on the first protruding structure; and
performing the anodic oxidation to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

13. The method of claim 8 , wherein one or more second protruding structures are formed on the substrate for nanowire formation through the anodic oxidation.

14. A method for forming one or more nanowires on a substrate, the method comprising:
forming a first protruding structure on the substrate;
placing the substrate including the first protruding structure in an electrolytic solution; and
forming the one or more nanowires inside the first protruding structure by oxidizing the first protruding structure, wherein the first protruding structure is oxidized via an anodic oxidation that uses the substrate as part of an anode electrode, the one or more nanowires being surrounded by a first dielectric material formed during the anodic oxidation, and the anode electrode including a conductive material, and wherein the oxidizing of the first protruding structure comprises closing off a conduction channel of charges to a top portion of the first protruding structure by oxidizing a bottom portion of the first protruding structure, the closing off of the conduction channel stopping an oxidizing of the top portion.

15. The method of claim 14 , wherein the anode electrode is configured to be electrically connected to a power supply and be in contact with the substrate.

16. The method of claim 14 , wherein:
the anode electrode further includes a conductive material and a metal electrode, the metal electrode being disposed between the substrate and the conductive material; and
the conductive material is configured to be electrically connected to a power supply and be in contact with the substrate and the metal electrode.

17. The method of claim 14 , wherein:
the first protruding structure has a width and a height;
an aspect ratio of the first protruding structure is equal to the height divided by the width; and
the aspect ratio is larger than an aspect-ratio threshold.

18. The method of claim 14 , wherein the performing anodic oxidation using the substrate as part of the anode electrode includes:
performing a first oxidation process to oxidize part of the first protruding structure using the substrate as part of the anode electrode;
forming a metal material on the partially oxidized first protruding structure; and
performing a second oxidation process to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

19. The method of claim 14 , wherein the performing anodic oxidation using the substrate as part of the anode electrode includes:
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Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Univ Nat Taiwan
• Taiwan Semiconductor Mfg Company Ltd & Nat Taiwan Univ

Inventors

• Hwu Jenn-Gwo
• Tian Wei-Cheng
• Tseng Po-Hao

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• C25D17/06

  Suspending or supporting devices for articles to be coated · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• C25D5/02

  Electroplating of selected surface areas · CPC title