Power switching systems comprising high power e-mode GaN transistors and driver circuitry

Patent metadata

Field	Value
Publication number	US-9525413-B2
Application number	US-201615099459-A
Country	US
Kind code	B2
Filing date	Apr 14, 2016
Priority date	Mar 12, 2014
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

Driver circuitry for switching systems comprising enhancement mode (E-Mode) GaN power transistors with low threshold voltage is disclosed. An E-Mode high electron mobility transistor (HEMT) D 3 has a monolithically integrated GaN driver, comprising smaller E-Mode GaN HEMTs D 1 and D 2 , and a discrete dual-voltage pre-driver. In operation, D 1 provides the gate drive voltage to the gate of the GaN switch D 3 , and D 2 clamps the gate of the GaN switch D 3 to the source, via an internal source-sense connection closely coupling the source of D 3 and the source of D 2 . An additional source-sense connection is provided for the pre-driver. Boosting the drive voltage to the gate of D 1 produces firm and rapid pull-up of D 1 and D 3 for improved switching performance at higher switching speeds. High current handling components of the driver circuitry are integrated with the GaN switch and closely coupled to reduce inductance, while the discrete pre-driver can be thermally separated from the GaN chip.

First claim

The invention claimed is:

1. A GaN transistor switching device comprising:
an enhancement mode (E-Mode) GaN switch having an integrated GaN driver;
the E-Mode GaN switch comprising a GaN transistor switch D 3 fabricated on a substrate and the integrated GaN driver being integrated monolithically with the GaN transistor switch D 3 on the substrate, wherein:
the integrated GaN driver comprises a first, pull-up, E-Mode GaN driver transistor D 1 and a second, pull-down, E-Mode GaN driver transistor D 2 , the drain of the D 1 being coupled to Vcc, and the source of D 1 being coupled to the drain of D 2 at a node N, and node N being coupled to the gate of D 3 , and an internal source-sense connection closely coupling the source of D 3 and the source of D 2 , such that the first transistor D 1 operates to deliver a drive voltage to the gate of the GaN transistor switch D 3 , and the second transistor D 2 operates to clamp the gate of the GaN transistor switch D 3 to Vss by means of the internal source-sense connection SS internal ;
inputs for coupling to a pre-driver supplying gate drive voltages to the gates of D 1 and D 2 and, optionally, to the gate of D 3 , and
an external source-sense connection SS external for coupling to the pre-driver.

2. The device of claim 1 wherein D 3 is a large gate width E-Mode GaN HEMT having a threshold voltage of ˜1.5V and D 1 and D 2 are smaller gate width E-Mode GaN HEMTs.

3. A method of operating the GaN switching device D 3 having integrated GaN driver circuitry comprising D 1 and D 2 , as defined in claim 1 , comprising:
providing, from a pre-driver, dual voltage drive outputs comprising a first drive voltage 0-Vcc 1 for driving the gate of D 1 and a second drive voltage 0-Vcc 2 for driving the gate of D 2 , wherein Vcc 1 is greater than Vcc 2 .

4. A GaN power switching system comprising:
an enhancement mode (E-Mode) GaN switch and driver circuitry comprising an integrated GaN driver and a discrete pre-driver;
the E-Mode GaN switch comprising a GaN transistor switch (D 3 ) fabricated on a first substrate and the integrated GaN driver being integrated monolithically with the GaN transistor D 3 on the GaN chip, wherein:
the integrated GaN driver comprises a first, pull-up, E-mode GaN driver transistor D 1 and a second, pull-down, E-mode GaN driver transistor D 2 , the drain of D 1 being coupled to the supply voltage Vcc, and the source of D 1 being coupled to the drain of D 2 at node N, which is coupled to the gate of D 3 , such that the first transistor D 1 operates to deliver a drive voltage to the gate of the GaN transistor switch D 3 , and an internal source-sense connection closely coupling the source of D 3 and the source of D 2 , such that the second transistor D 2 operates to clamp the gate of the GaN transistor switch D 3 to source by means of the internal source-sense connection SS internal ;
external gate inputs for supplying gate drive voltages from the pre-driver to each of the gates of D 1 and D 2 , and optionally to the gate of D 3 ; and an external source-sense connection SS external for coupling to the pre-driver circuit; and
the pre-driver is fabricated on a second, pre-driver, substrate 102 , the pre-driver having an input for receiving an input voltage Vin and outputs for delivering gate drive voltages to the gate connections of each of GaN driver transistors D 1 and D 2 of the integrated GaN driver.

5. The system of claim 4 , wherein the pre-driver further comprises an output for delivering a gate drive voltage to the gate of D 3 .

6. The system of claim 4 , wherein D 3 is a large gate width E-Mode GaN HEMT having a threshold voltage of ˜1.5V and D 1 and D 2 are smaller gate width E-Mode GaN HEMTs.

7. The system of claim 6 , wherein the pre-driver is a dual voltage pre-driver configured with non-inverting pre-driver circuitry to supply a first drive voltage 0-Vcc 1 to the gate of D 1 , inverting pre-driver circuitry to supply a second drive voltage 0-Vcc 2 to the gate of D 2 , and when there is a gate connection to the gate of D 3 , non-inverting pre-driver circuitry to supply the second drive voltage 0-Vcc 2 to the gate of D 3 , and wherein the first supply voltage Vcc 1 is higher than the second supply voltage Vcc 2 .

8. The system of claim 7 wherein the pre-driver supplies a gate drive voltage Vcc 2 of 0-6V and a gate drive voltage Vcc 1 of 0-10V.

9. The system of claim 7 wherein the pre-driver comprises a voltage doubler that develops a voltage supply Vcc 1 of 12V from a voltage supply Vcc 2 of 6V.

10. The system of claim 4 wherein the pre-driver comprises first, second and third discrete pre-driver components Pd 1 , Pd 2 and Pd 3 coupled in parallel paths between the input for Vin and respective outputs for gate voltages to D 1 , D 2 and D 3 ; Pd 1 and Pd 2 being non-inverting and configured so that when Vin is high a gate drive voltage is supplied to turn on the driver transistor D 1 which provides a gate voltage to the gate of D 3 to turn on the power switch D 3 , and Pd 3 being an inverting element configured so that when Vin is low a gate drive voltage is supplied to D 2 to turn on D 2 to clamp the power switch D 3 off.

11. The system of claim 10 wherein the Pd 1 pre-driver is a 10V non-inverting driver and Pd 2 is a 6V non-inverting driver and Pd 3 is a 6V inverting driver.

12. The system of claim 10 wherein the discrete pre-driver components comprise CMOS pre-drivers.

13. The system of claim 4 wherein the pre-driver provides a single supply voltage Vcc, first, second and third pre-driver circuit components Pd 1 , Pd 2 and Pd 3 , and a large p-channel MOSFET M 1 , wherein the source of the M 1 is coupled to Vcc, the drain of the MOSFET M 1 coupled to the gate of D 3 for pulling the gate to the power supply voltage Vcc; Pd 1 being a non-inverting driver being coupled between the input for Vin and output to the gate of D 1 for driving the gate of D 1 ; Pd 3 being an inverting driver being coupled between the input for Vin and output to the gate of D 2 for driving the gate of D 2 ; and Pd 2 being an inverting driver coupled between the input for Vin and the gate of the p-channel MOSFET M 1 for driving the gate of M 1 , such that M 1 drives the gate of D 3 .

14. The system of any claim 4 wherein the pre-driver comprises an integrated circuit using a single supply voltage Vcc; first, second and third integrated pre-driver circuit elements Pd 1 , Pd 2 and Pd 3 , and a large p-channel MOSFET structure M 1 , wherein the source of the M 1 is coupled to Vcc, the drain of the MOSFET is coupled to the gate of D 3 for pulling the gate to the power supply voltage Vcc; Pd 1 being a non-inverting driver being coupled between the input for Vin and output to the gate of D 1 for driving the gate of D 1 ; Pd 3 being an inverting driver being coupled between the input for Vin and output to the gate of D 2 for driving the gate of D 2 ; and Pd 2 being an inverting driver coupled between the input for Vin and the gate of the p-channel MOSFET M 1 , such that M 1 drives the gate of M 1 .

15. The system of claim 4 wherein the pre-driver comprises voltage boost circuitry for developing a supply voltage Vcc 1 from a supply voltage Vcc, wherein Vcc 1 >Vcc; and wherein the pre-driver is configured to provide a first output drive voltage of 0-Vcc 1 to the gate of D 1 and a second output voltage 0-Vcc to the gate of D 2 .

16. The system of claim 15 wherein the pre-driver provides outputs to the gates of D 1 and D 3 , and wherein the pre-driver further comprises circuit elements P 1

Assignees

• Gan Systems Inc

Inventors

• Roberts John
• Scott Iain H

Classifications

• H10D84/05

  using Group III-V technology · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D84/82

  of only field-effect components · CPC title

• H10D84/01

  Manufacture or treatment · CPC title

• H10D30/4755

  having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title