Electromechanical transducer and method of producing the same

Patent metadata

Field	Value
Publication number	US-9525121-B2
Application number	US-201213436400-A
Country	US
Kind code	B2
Filing date	Mar 30, 2012
Priority date	Apr 6, 2011
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

An electromechanical transducer includes a first electrode; a silicon oxide film disposed on the first electrode; and a vibration film including a silicon nitride film disposed on the silicon oxide film with a space therebetween and a second electrode disposed on the silicon nitride film so as to oppose the first electrode.

First claim

What is claimed is:

1. An electromechanical transducer comprising a plurality of cells, the cell including:
a first electrode;
a silicon oxide film;
a vibration film that includes a silicon nitride film and a second electrode; and
a voltage-applying unit for applying a voltage between the first electrode and the second electrode;
the voltage-applying unit applies a voltage so that the silicon nitride film is applied with an electric field intensity of 2 MV/cm or less;
wherein a space is formed between the silicon oxide film and the silicon nitride film in a direction in which the silicon oxide film and the silicon nitride film are stacked,
wherein the silicon oxide film is contacted with the first electrode and the space,
wherein the silicon nitride film is contacted with the second electrode and the space, and
wherein the voltage-applying unit applies the voltage so that a potential of the first electrode is lower than a potential of the second electrode.

2. The electromechanical transducer according to claim 1 , wherein the silicon nitride film has a tensile stress higher than 0 MPa and not higher than 300 MPa.

3. The electromechanical transducer according to claim 1 , wherein the vibration film further includes a silicon nitride film disposed on the second electrode on the opposite side of the space.

4. The electromechanical transducer according to claim 1 , wherein the silicon oxide film has a thickness of 50 to 200 nm.

5. The electromechanical transducer according to claim 1 , wherein the silicon nitride film has a thickness of 300 to 800 nm.

6. The electromechanical transducer according to claim 1 , wherein a ratio of silicon to nitrogen in the silicon nitride film is higher than 3:4.

7. The electromechanical transducer according to claim 1 , wherein a ratio of silicon to oxygen in the silicon oxide film is close to 1:2.

8. The electromechanical transducer according to claim 1 , wherein the space has a depth of 50 nm to 300 nm.

9. The electromechanical transducer according to claim 1 , wherein the first electrode has a root mean surface roughness (Rms) of 2 nm or less.

10. The electromechanical transducer according to claim 1 , wherein the silicon oxide film has a root mean surface roughness (Rms) of 2 nm or less.

11. The electromechanical transducer according to claim 1 , wherein the first electrode contains at least one of titanium and aluminum.

12. The electromechanical transducer according to claim 1 , wherein the second electrode contains titanium.

13. The electromechanical transducer according to claim 1 , wherein a variation among the cells in bending is ±2 nm or less.

14. The electromechanical transducer according to claim 1 , wherein a variation among the cells in sensitivity is 1 dB or less.

15. The electromechanical transducer according to claim 1 , further comprising a plurality of elements which has the plurality of cells,
wherein a variation among the elements in effective voltage applied between the first electrode and the second electrode is 0.1 V or less.

16. The electromechanical transducer according to claim 1 , wherein the space is not filled with a solid.

17. The electromechanical transducer according to claim 1 , wherein the silicon nitride film has a tensile stress higher than 0 MPa and not higher than 200 MPa.

18. The electromechanical transducer according to claim 1 , wherein at least one of the first electrode and the second electrode of each of the plurality of cells is a common electrode.

19. The apparatus according to claim 1 , wherein the space is sealed.

20. The electromechanical transducer according to claim 1 , wherein the plurality of cells is two-dimensionally arranged to form an element.

21. The electromechanical transducer according to claim 1 , wherein at least one of the first electrode and the second electrode is a common electrode shared by the plurality of cells.

22. The electromechanical transducer according to claim 1 , wherein the first electrode has a negative voltage.

23. The electromechanical transducer according to claim 1 , wherein the electromechanical transducer receives an ultrasonic wave while the voltage-applying unit applies a DC voltage so as to cause a potential difference between the first electrode and the second electrode.

24. The electromechanical transducer according to claim 1 , wherein the electromechanical transducer transmits an ultrasonic wave while the voltage-applying unit applies a DC voltage to the first electrode and an AC voltage to the second electrode.

25. An electromechanical transducer comprising a plurality of cells, the plurality of cells including:
a first electrode;
a first insulating film; and
a vibration film that includes a second insulating film and a second electrode;
wherein the first electrode, the first insulating film, the second insulating film and the second electrode are arranged in order from the first electrode, wherein
the second insulating film has a tensile stress of higher than 0 MPa and not higher than 300 MPa,
wherein the first insulating film has a higher potential barrier than that of the second insulating film,
wherein a space is formed between the first insulating film and the second insulating film in a direction in which the first insulating film and the second insulating film are stacked,
wherein the first insulating film is contacted with the first electrode and the space, and
wherein the second insulating film is contacted with the second electrode and the space.

26. The electromechanical transducer according to claim 25 , wherein a voltage is applied between the first electrode and the second electrode so that the potential of the first electrode is lower than the potential of the second electrode.

27. The electromechanical transducer according to claim 25 , wherein a voltage is applied between the first electrode and the second electrode so that the silicon nitride film is applied with an electric field intensity of 2 MV/cm or less.

28. The electromechanical transducer according to claim 25 , wherein the first insulating film is silicon oxide film.

29. The electromechanical transducer according to claim 25 , wherein the second insulating film is silicon nitride film.

30. The electromechanical transducer according to claim 28 , wherein a ratio of silicon to oxygen is close to 1:2.

31. The electromechanical transducer according to claim 29 , wherein a ratio of silicon to nitrogen is higher than 3:4.

32. The electromechanical transducer according to claim 25 , further comprising a first insulating film disposed on the first electrode on the opposite side of the space.

33. The electromechanical transducer according to claim 25 , wherein the first insulating film has a root mean surface roughness (Rms) of 2 nm or less.

34. The electromechanical transducer according to claim 25 , wherein the first insulating film has a thickness of 50 to 200 nm.

35. The electromechanical transducer according to claim 25 , wherein the second insulating film has a thickness of 300 to 800 nm.

Assignees

• Torashima Kazutoshi
• Akiyama Takahiro
• Tomiyoshi Toshio
• Canon Kk

Inventors

• Torashima Kazutoshi
• Akiyama Takahiro
• Tomiyoshi Toshio

Classifications

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• H01L41/0973

  Electricity · mapped topic

• H02N1/08 Primary

  with conductive charge carrier, i.e. capacitor machines · CPC title

• H01L41/332

  Electricity · mapped topic

• Y10T29/42

  Piezoelectric device making · CPC title