Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

Patent metadata

Field	Value
Publication number	US-9524874-B2
Application number	US-201113991924-A
Country	US
Kind code	B2
Filing date	Dec 7, 2011
Priority date	Dec 10, 2010
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1) m /(B2) n Y] p (I), wherein the indices and the variables have the following meaning: m, n, and p integers≧1; R hydrogen atom or monovalent or polyvalent organic residue, except C 5 -C 20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C 5 -C 20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

First claim

We claim:

1. An aqueous polishing composition, comprising:
an abrasive particle comprising ceria; and
an amphiphilic non-ionic surfactant,
wherein the amphiphilic non-ionic surfactant is selected from the group consisting of a water-soluble linear polyoxyalkylene block polymer, a water-soluble branched polyoxyalkylene block copolymer, a water-dispersible linear polyoxyalklene block polymer, and a water-dispersible branched polyoxyalkylene block copolymer of formula (I):
R[(B1) m /(B2) n Y] p   (I),

wherein m is an integer ≧1;
n is an integer ≧1;
p is an integer ≧1;
R is hydrogen or a monovalent or polyvalent organic residue, other than a linear or branched alkyl group having 5 to 20 carbon atoms;
(B1) is a block consisting essentially of at least one oxyethylene monomer unit;
(B2) is a block consisting essentially of at least one substituted oxyalkylene monomer unit; and
Y is hydrogen or a monovalent organic residue, other than a linear or branched alkyl group having 5 to 20 carbon atoms, and
wherein a substituent of the at least one substituted oxyalkylene monomer unit is selected from the group consisting of at least two methyl groups, an alkyl group having at least two carbon atoms, a cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl, and alkyl-cycloalkyl-aryl group and
with the proviso that when the amphiphilic non-ionic surfactant comprises more than one block (B1) or (B2) then two blocks of (B1), if present, are separated from each other by a block of (B2) and two blocks of (B2), if present, are separated from each other by a block of (B1).

2. The aqueous polishing composition according to claim 1 , wherein the at least one substituted oxyalkylene monomer unit of the block (B2) is derived from at least one substituted oxirane wherein a substituent of the at least one substituted oxirane monomer unit selected from the group consisting of at least two methyl groups, an alkyl group having at least two carbon atoms, a cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl, and alkyl-cycloalkyl-aryl group.

3. The aqueous polishing composition according to claim 2 , wherein the substituent of the at least one substituted oxirane is selected from the group consisting of at least two methyl groups, an alkyl group having 2 to 10 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms in spirocyclic configuration, exocyclic configuration, annealed configuration, and a combination thereof, an aryl group having 6 to 10 carbon atoms, an alkyl-cycloalkyl group having 6 to 20 carbon atoms, an alkyl-aryl group having 7 to 20 carbon atoms, a cycloalkyl-aryl group 11 to 20 carbon atoms, and an alkyl-cycloalkyl-aryl group having 12 to 30 carbon atoms.

4. The aqueous polishing composition according to claim 3 , wherein the at least one substituted oxirane is selected from the group consisting of 2-ethyl, 2,3-dimethyl, and 2,2-dimethyl oxirane.

5. The aqueous polishing composition according to claim 1 , wherein the amphiphilic non-ionic surfactant has an HLB value of from 3 to 20.

6. The aqueous polishing composition according to claim 1 , wherein average degrees of polymerization of the block (B1) and the block (B2) are independently from 5 to 100.

7. The aqueous polishing composition according to claim 1 , wherein a weight average molecular weight of the amphiphilic non-ionic surfactant is from 1000 to 10,000 Dalton.

8. The aqueous polishing composition according to claim 1 , comprising the amphiphilic non-ionic surfactant in an amount of from 0.001 to 5% by weight based on a complete weight of the aqueous polishing composition.

9. The aqueous polishing composition according to claim 1 , comprising the abrasive particle in an amount of from 0.005 to 10% based on a complete weight of the aqueous polishing composition.

10. The aqueous polishing composition according to claim 1 , further comprising:
a functional component, wherein the functional component is different from the abrasive particle or the amphiphilic non-ionic surfactant, and
wherein the functional component is selected from the group consisting of an organic abrasive particle, an inorganic abrasive particle, and a hybrid organic-inorganic abrasive particle different from the abrasive particle, a material having a lower critical solution temperature LCST or an upper critical solution temperature UCST, an oxidizing agent, a passivating agent, a charge reversal agent, an organic polyol having at least 2 hydroxy groups that are not dissociable in an aqueous medium, an oligomer, and a polymer formed from at least one monomer having at least 2 hydroxy groups that are not dissociable in the aqueous medium, a complexing or chelating agent, a fictive agent, a stabilizing agent, a rheology agent, a surfactant, a metal cation, an anti-microbial agent, and an organic solvent.

11. The aqueous polishing composition according to claim 10 , wherein the functional component is a charge reversal agent.

12. The aqueous polishing composition according to claim 10 , wherein the functional component is a charge reversal agent selected from the group consisting of a monomeric compound, an oligomeric compound, and a polymeric compound comprising at least one anionic group selected from the group consisting of a carboxylate group, a sulfinate group, a sulfate group, a phosphonate group, and a phosphate group.

13. The aqueous polishing composition according to claim 10 , wherein the functional component is a charge reversal agent comprising a water-soluble condensed phosphate.

14. A process for polishing a substrate comprising:
contacting the substrate at least once with the aqueous polishing composition according to claim 1 ; and
polishing the substrate until a desired planarity is achieved, wherein the substrate is suitable for an electrical device, a mechanical device or an optical device.

15. The process according to claim 14 , wherein the substrate comprises a film comprising a silicon oxide dielectric material and a film comprising polysilicon.

16. The process according to claim 15 , wherein the substrate further comprises a film comprising silicon nitride.

17. The process according to claim 14 ,
wherein the electrical device is an integrated circuit device, a liquid crystal panel, an organic electroluminescent panel, a printed circuit board, a micro machine, a DNA chip, a micro plant, or a magnetic head;
the mechanical device is a high precision mechanical device; and
the optical device is an optical glass, a lens and a prism, an inorganic electro-conductive film, an optical integrated circuit, an optical switching element, an optical waveguide, an optical monocrystal, a solid laser monocrystal, a sapphire substrate for a blue laser LED, a semiconductor monocrystal, or a glass substrate for a magnetic disk.

Assignees

• Venkataraman Shyam Sundar
• Su Eason Yu-Shen
• Kingma Arend Jouke
• Noller Bastian Marten
• Basf Se

Inventors

• Venkataraman Shyam Sundar
• Su Eason Yu-Shen
• Kingma Arend Jouke
• Noller Bastian Marten

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402 Primary

  of semiconductor materials · CPC title

• H10P14/61

  using masks · CPC title

• H01L21/31053

  Electricity · mapped topic

• C09K3/1463

  Aqueous liquid suspensions · CPC title