Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9524847-B2
Application number	US-201314060964-A
Country	US
Kind code	B2
Filing date	Oct 23, 2013
Priority date	Jun 24, 2010
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
an accommodating chamber which accommodates the substrate;
a lower electrode which is disposed inside the accommodating chamber and on which the substrate is held;
an upper electrode which faces the lower electrode, wherein a dielectric is buried in at least a portion of the upper electrode, and one of the upper electrode and the lower electrode is moveable with respect to the other;
a high frequency power s…

Assignees

• Tokyo Electron Ltd

Inventors

• Wada Nobuhiro
• Kobayashi Makoto
• Tsujimoto Hiroshi
• Tamura Jun
• Naoi Mamoru
• Oyabu Jun

Classifications

• H01J37/32091 Primary

  Electricity · mapped topic

• H01J37/3255

  Electricity · mapped topic

• H01J37/04 Primary

  Electricity · mapped topic

• H01J37/32568

  Electricity · mapped topic

• H10P50/267

  Electricity · mapped topic