Positive resist composition and patterning process

Patent metadata

Field	Value
Publication number	US-2016147149-A1
Application number	US-201514927690-A
Country	US
Kind code	A1
Filing date	Oct 30, 2015
Priority date	Nov 25, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

An androstane or estrane-substituted cholane as base resin is combined with an acid generator to formulate a positive resist composition, especially chemically amplified positive resist composition.

First claim

1 . A positive resist composition comprising a resin and an acid generator, the resin having the general formula (1)-1 and/or (1)-2:

wherein R 1 and R 3 each are a single bond or a straight, branched or cyclic C 1 -C 20 alkylene group which may have an ether or ester moiety, Y 1 and Y 3 each are oxygen or —NH—, Y 2 and Y 4 are single bonds when R 1 and R 3 are single bonds, and otherwise —C(═O)—O—, X 1 to X 6 are each independently hydrogen, hydroxy, alkoxy, acyloxy or carbonyl, R 2 and R 4 each are an acid labile group selected from the following formulae (1)-3 to (1)-7:

wherein R 5 to R 9 are each independently a straight, branched or cyclic C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl group, R 10 is hydroxy, alkoxy or acyloxy, m is 1 or 2, the line segment protruding out of the bracket denotes a valence bond.

2 . The positive resist composition of claim 1 , further comprising an organic solvent.

3 . The positive resist composition of claim 1 , further comprising a basic compound and/or surfactant.

4 . A pattern forming process comprising the steps of coating a substrate with the positive resist composition of claim 1 , baking the composition to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in a developer.

Assignees

• Shinetsu Chemical Co

Inventors

• Hatakeyama Jun

Classifications

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/2041

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

• G03F7/0045 Primary

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title