Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device

Patent metadata

Field	Value
Publication number	US-9523913-B2
Application number	US-201314093781-A
Country	US
Kind code	B2
Filing date	Dec 2, 2013
Priority date	May 30, 2011
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.

First claim

The invention claimed is:

1. A pattern forming method comprising:
(i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing:
(A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group,
(B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and
(C) a solvent,

(ii) a step of exposing the film, and
(iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern,

wherein
the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the following formula (I):

in formula (I),
Xa represents a hydrogen atom or an alkyl group, and
Rx represents a hydrogen atom or a group capable of decomposing and leaving by the action of an acid;
the repeating unit having a non-phenolic aromatic group is a repeating unit represented by the following formula (II):

in formula (II),
R 01 represents a hydrogen atom or an alkyl group,
X represents a single bond or a divalent linking group,
Ar represents a non-phenolic aromatic group, and
R 4 represents a single bond or an alkylene group;
the repeating unit having a group capable of decomposing by the action of an acid to produce a polar group is a repeating unit represented by the following formula (III):

in formula (III),
R 0 represents a hydrogen atom or an alkyl group,
each of R 1 to R 3 independently represents an alkyl group or a cycloalkyl group, and
two members out of R 1 to R 3 may combine to form a monocyclic or polycyclic cycloalkyl group;
the resin (A) does not contain a repeating unit having an acid group, wherein the acid group is selected from the group consisting of a carboxyl group, a sulfonamide group, a sulfonylimide group, a bissulfonylimide group, and an aliphatic alcohol substituted with an electron-withdrawing group at the α-position; and
the content of the repeating unit having a non-phenolic aromatic group is from 10 to 70 mol % based on all repeating units in the resin (A).

2. The pattern forming method as claimed in claim 1 , wherein (ii) the step of exposing the film is performed with a KrF excimer laser, an EUV light or an electron beam.

3. The pattern forming method as claimed in claim 1 , wherein (ii) the step of exposing the film is performed with a KrF excimer laser.

4. The pattern forming method as claimed in claim 1 , wherein the resin (A) does not contain the repeating unit represented by formula (I).

5. The pattern forming method as claimed in claim 1 , wherein in formula (II), X is —COO— or —CONH—.

6. The pattern forming method as claimed in claim 1 , wherein the content of the repeating unit represented by formula (III) is from 20 to 90 mol % based on all repeating units in the resin (A).

7. The pattern forming method as claimed in claim 1 , wherein the developer is a developer containing at least one kind of an organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent and an ether-based solvent.

8. A method for manufacturing an electronic device, comprising the pattern forming method claimed in claim 1 .

9. An electronic device manufactured by the method for manufacturing an electronic device claimed in claim 8 .

10. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
(A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group,
(B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and
(C) a solvent,

wherein
the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the following formula (I):

in formula (I),
Xa represents a hydrogen atom or an alkyl group, and
Rx represents a hydrogen atom or a group capable of decomposing and leaving by the action of an acid;
the repeating unit having a non-phenolic aromatic group is a repeating unit represented by the following formula (II):

in formula (II),
R 01 represents a hydrogen atom or an alkyl group,
X represents a single bond or a divalent linking group,
Ar represents a non-phenolic aromatic group, and
R 4 represents a single bond or an alkylene group;
the repeating unit having a group capable of decomposing by the action of an acid to produce a polar group is a repeating unit represented by the following formula (III):

in formula (III),
R 0 represents a hydrogen atom or an alkyl group,
each of R 1 to R 3 independently represents an alkyl group or a cycloalkyl group, and
two members out of R 1 to R 3 may combine to form a monocyclic or polycyclic cycloalkyl group;
the resin (A) does not contain a repeating unit having an acid group, wherein the acid group is selected from the group consisting of a carboxyl group, a sulfonamide group, a sulfonylimide group, a bissulfonylimide group, and an aliphatic alcohol substituted with an electron-withdrawing group at the α-position; and
the content of the repeating unit having a non-phenolic aromatic group is from 10 to 70 mol % based on all repeating units in the resin (A).

11. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 10 , wherein the content of the repeating unit having a non-phenolic aromatic group is from 20 to 60 mol % based on all repeating units in the resin (A).

12. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 10 , wherein the content of the repeating unit having a non-phenolic aromatic group is from 30 to 50 mol % based on all repeating units in the resin (A).

Assignees

• Fujifilm Corp

Inventors

• Kato Keita
• Shirakawa Michihiro
• Takahashi Hidenori
• Saitoh Shoichi
• Yoshino Fumihiro

Classifications

• H10P76/00

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• G03F7/0382 Primary

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title