Composition for imprints, pattern and patterning method
US-8980404-B2 · Mar 17, 2015 · US
US9522998B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9522998-B2 |
| Application number | US-201314391064-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 9, 2013 |
| Priority date | Apr 10, 2012 |
| Publication date | Dec 20, 2016 |
| Grant date | Dec 20, 2016 |
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Provided are: a resin mold material and a resin replica mold material composition for imprinting having a superior mold releasability; a resin mold and a resin replica mold resulting from containing the material composition; and a method for producing them. The resin mold material or resin replica mold material composition for imprinting contains 100 parts by weight of a mold resin or replica mold resin for imprinting and 0.1 to 10 parts by weight of a curable fluoropolymer (A). Preferably, the fluoropolymer (A) has a weight-average molecular weight of 3,000 to 20,000 and results from including as repeating units (a1) an α-position substituted acrylate having a fluoroalkyl group having 4 to 6 carbon atoms and (a2) and 5 to 120 parts by weight of a high-softening-point monomer exhibiting a glass transition point or softening point of at least 50° C. in the homopolymer state.
Opening claim text (preview).
The invention claimed is: 1. A resin mold material composition for imprinting which comprises 0.1 to 10 parts by weight of a curable fluoropolymer (A) with respect to 100 parts by weight of a curable resin or curable monomer which is able to form a mold resin or a replica mold resin for imprinting, wherein the curable fluoropolymer (A) comprises as a repeating unit: (a1) an α-position substituted acrylate having a fluoroalkyl group with a carbon number of 4 to 6 wherein a substituent group at the α-position is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a CFX 1 X 2 group (wherein X 1 and X 2 are a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom or an iodine atom), a cyano group, a linear or branched fluoroalkyl group with a carbon number of 1 to 20, a substituted or unsubstituted benzyl group, a substituted or unsubstituted phenyl group, or a linear or branched alkyl group with a carbon number of 1 to 20; and the curable fluoropolymer (A) has a weight-average molecular weight of 3,000 to 20,000. 2. The material composition according to claim 1 , wherein the fluoroalkyl group is a perfluoroalkyl group with a carbon number of 4. 3. The material composition according to claim 1 , which is a mold release agent composition for a mold imprinting. 4. The material composition according to claim 1 , which comprises the fluoropolymer (A); the curable resin or monomer (B); a crosslinking catalyst (C); optionally a solvent (D); and optionally a crosslinking agent (E). 5. The material composition according to claim 4 , wherein the curable resin or monomer (B) is an ultraviolet curable resin or monomer (B), and the crosslinking catalyst (C) is a photo-crosslinking catalyst (C). 6. A manufacturing process for a resin replica mold, which comprises steps of: applying the material composition according to claim 1 on a silicon substrate or quartz or a resin substrate or a resin film to form a coating film, pressing an original mold block made of an inorganic material and formed with a fine pattern on its surface against the coating film to form a transferred pattern, curing the transferred pattern, and releasing a resin replica mold having the transferred pattern from the original mold block. 7. The manufacturing process according to claim 6 , wherein the step of curing the transferred pattern is curing by exposure to ultraviolet light. 8. A manufacturing process for a resin mold, which comprises steps of: applying the material composition according to claim 1 on a silicon substrate or quartz or a resin substrate or a resin film to form a coating film, pressing a resin replica mold formed with a fine pattern on its surface against the coating film to form a transferred pattern, curing the transferred pattern, and releasing a resin mold having the transferred pattern from the resin replica mold. 9. The manufacturing process according to claim 8 , wherein the step of curing the transferred pattern is curing by exposure to ultraviolet light. 10. A manufacturing process for a silicon semiconductor substrate formed with a pattern, which comprises steps of: applying the material composition according to claim 1 on a silicon substrate to form a resist layer, and pressing an original mold block made of an inorganic material or a resin mold formed with a fine pattern on its surface against the resist layer to transfer the fine pattern, curing the transferred pattern to obtain a cured resist having a fine structured pattern, releasing the original mold block made of the inorganic material or the resin mold formed with the fine pattern on its surface from the cured resist onto which the pattern is transferred, optionally subjecting the cured resist layer to oxygen ashing to leave only a convex pattern in the cured resist layer, and subjecting thus obtained substrate to etching to obtain a silicon semiconductor substrate wherein the fine structured pattern is formed on a surface of the silicon substrate. 11. The manufacturing process according to claim 10 , wherein the step of curing the transferred pattern to obtain a cured resist having a fine structured pattern is curing by exposure to electromagnetic radiation to obtain the cured resist having the fine structured pattern. 12. A manufacturing process for a structure having a patterned shape on a substrate surface, which comprises steps of: applying the material composition according to claim 1 on a substrate to form a resist layer, and pressing an original mold block made of an inorganic material or a resin mold formed with a fine pattern on its surface against the resist layer to transfer the fine pattern, curing the transferred pattern to obtain a cured resist having a fine structured pattern, releasing the original mold block made of the inorganic material or the resin mold formed with the fine pattern on its surface from the cured resist onto which the pattern is transferred, optionally subjecting the cured resist layer to oxygen ashing to leave only a convex pattern in the cured resist layer, and subjecting thus obtained substrate to etching to obtain a structure wherein the fine structured pattern is formed on a substrate surface. 13. The manufacturing process according to claim 12 , wherein the step of curing the transferred pattern to obtain a cured resist having a fine structured pattern is curing by exposure to electromagnetic radiation to obtain the cured resist having the fine structured pattern. 14. The material composition according to claim 1 , wherein the curable fluoropolymer (A) corresponds to a fluoropolymer (A2) which comprises as repeating units: (a1) an α-position substituted acrylate having a fluoroalkyl group with a carbon number of 4 to 6, at 100 parts by weight wherein a substituent group at the α-position is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a CFX 1 X 2 group (wherein X 1 and X 2 are a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom or an iodine atom), a cyano group, a linear or branched fluoroalkyl group with a carbon number of 1 to 20, a substituted or unsubstituted benzyl group, a substituted or unsubstituted phenyl group, or a linear or branched alkyl group with a carbon number of 1 to 20, (a3-1) a crosslinking group-containing monomer containing an epoxy group at 5 to 60 parts by weight, and (a5) an alkyleneoxy group-containing monomer represented by a formula (R 1 O) n R 2 (wherein R 1 is —(CH 2 ) 2 — or —(CH 2 ) 3 —, R 2 is hydrogen or a methyl group, and n is 1 to 10) at 10 to 40 parts by weight; and the fluoropolymer (A2) has a weight-average molecular weight of 3,000 to 20,000. 15. The material composition according claim 14 , wherein the fluoropolymer (A2) further comprises as a repeating unit (a4) an SiO-containing monomer at 2 to 20 parts by weight. 16. The material composition according to claim 14 , wherein a hydroxyl group at a terminal of (a5) the alkyleneoxy group-containing monomer of the fluoropolymer (A2) is reacted with an isocyanate group-containing unsaturated compound. 17. The material composition according to claim 14 wherein the fluoroalkyl group is a perfluoroalkyl group with a carbon number of 4. 18. The material composition according to claim 1 , wherein the curable fluoropolymer (A) corresponds to a fluoropolymer (A2)′ which comprises as repeating units: (a1) an α-position substituted acrylate having a fluoroalkyl group with a carbon number of 4 to 6, at 100 parts by weight wherein a substituent group at the α-position is a fluorine atom, a c
characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title
characterised by their composition, e.g. multilayer masks or materials · CPC title
by making impressions of one or more parts of models, e.g. shaped articles and including possible subsequent assembly of the parts · CPC title
Moulding surfaces provided with means for marking or patterning (for injection moulding B29C45/372) · CPC title
having improved processability or containing aids for moulding methods · CPC title
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