Hall effect device

Patent metadata

Field	Value
Publication number	US-9520551-B2
Application number	US-201514933351-A
Country	US
Kind code	B2
Filing date	Nov 5, 2015
Priority date	Sep 13, 2012
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

First claim

The invention claimed is:

1. A Hall effect device, comprising:
an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions, and
at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element that are spatially distinct from one another,
wherein each switchable supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal,
wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and
wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

2. The Hall effect device according to claim 1 , wherein the sense contact elements and the switchable supply contact elements are formed to be separately connected to the active Hall region.

3. The Hall effect device according to claim 1 , wherein the triangular active sub-regions jointly form the resulting active Hall region.

4. The Hall effect device according to claim 1 , further comprising:
a control circuit for controlling an operation of the Hall effect device.

5. The Hall effect device according to claim 4 , wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region.

6. A Hall effect device, comprising:
an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions,
at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, and
a control circuit for controlling an operation of the Hall effect device;
wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal,
wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and
wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements,
wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region, and
wherein the control circuit is configured to selectively switch on one of the supply contact elements for feeding a biasing current in a predetermined current direction through the active Hall region, and to selectively switch off the remaining supply contact elements during each of the different phases of a spinning current operation.

7. A Hall effect device, comprising:
an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions,
at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, and
a control circuit for controlling an operation of the Hall effect device,
wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal,
wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and
wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements,
wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region, and
wherein the control circuit is configured to apply a first to fourth phase of the spinning current operation to the terminal structures at the active Hall region, and to continuously cyclically rotate the biasing current direction through the active Hall region and to continuously cyclically rotate the measurement direction for detecting a Hall voltage at the pairs of sense contact elements.

8. The Hall effect device according to claim 4 , wherein the control circuit is configured to apply at least one mode of a calibration operation to the terminal structures at the active Hall region.

9. The Hall effect device according to claim 1 , wherein the transistor element is a bipolar junction transistor or a field effect transistor.

10. The Hall effect device according to claim 1 , wherein the sense contact elements and the switchable supply contact elements are separate contact elements which are directly connected to the active Hall region.

11. The Hall effect device according to claim 1 , wherein the second transistor terminals extend in the active Hall region and are part of the active Hall region.

12. The Hall effect device according to claim 1 , wherein, in a direction parallel to a flowing direction of a control or biasing current through the active Hall region, the switchable supply contact elements are broader than the sense contact elements.

13. The Hall effect device according to claim 1 , wherein the sense contact elements and the switchable supply contact elements are positioned in pairs at the boundary of the triangular active regions.

Assignees

• Infineon Technologies Ag
• Infineon Tecnologies Ag

Inventors

• Kolb Stefan
• Eckinger Markus

Classifications

• G01R33/0035

  Calibration of single magnetic sensors, e.g. integrated calibration · CPC title

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• H01L43/065 Primary

  Electricity · mapped topic

• G01R33/075

  Hall devices configured for spinning current measurements · CPC title

• H01L27/22

  Electricity · mapped topic