3D high voltage charge pump

Patent metadata

Field	Value
Publication number	US-9520506-B2
Application number	US-201414338354-A
Country	US
Kind code	B2
Filing date	Jul 23, 2014
Priority date	Jul 23, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A capacitor and method of forming a capacitor are presented. The capacitor includes a substrate having a capacitor region in which the capacitor is disposed. The capacitor includes first, second and third sub-capacitors (C 1 , C 2 and C 3 ). The C 1 comprises a metal oxide semiconductor (MOS) capacitor which includes a gate on the substrate. The gate includes a gate electrode over a gate dielectric. A first C 1 plate is served by the gate electrode, a second C 1 plate is served by the substrate of the capacitor region and a C 1 capacitor dielectric is served by the gate dielectric. The C 2 includes a back-end-of-line (BEOL) vertical capacitor disposed in ILD layers with metal levels and via levels. A plurality of metal lines are disposed in the metal levels. The metal lines of a metal level are grouped in alternating first and second groups, the first group serves as first C 2 plates and second group serves as second C 2 plates and the dielectric layers between the first and second groups serve as C 2 capacitor dielectrics. The C 3 includes a first C 3 plate served by the gate electrode, a second C 3 plate served by second group lines in the first metal level of the ILD layers, and a C 3 capacitor dielectric is served by the first via level dielectric below M 1 and above the gate electrode. A first capacitor terminal is coupled to first capacitor plates of C 1 , C 2 and C 3 and a second capacitor terminal is coupled to second capacitor plates of C 1 , C 2 and C 3.

First claim

What is claimed is:

1. A non-volatile memory (NVM) charge pump capacitor comprising:
a substrate including a capacitor region in which the capacitor is disposed, the capacitor includes
a first sub-capacitor (C 1 ), the first sub-capacitor comprises a high voltage (HV) metal oxide semiconductor (MOS) capacitor which includes a HV gate on the substrate, the HV gate includes a HV gate electrode over a HV gate dielectric, wherein
a first C 1 plate is served by the HV gate electrode,
a second C 1 plate is served by the substrate of the capacitor region, and
a C 1 capacitor dielectric is served by the HV gate dielectric,

a second sub-capacitor (C 2 ), the second sub-capacitor comprises a back-end-of-line (BEOL) vertical capacitor disposed in interlevel dielectric (ILD) layers with metal levels and via levels, wherein a plurality of metal lines are disposed in the metal levels, the metal lines of a metal level are grouped in alternating first and second groups, the first group serves as first C 2 plates and second group serves as second C 2 plates and the dielectric layers between the first and second groups serve as C 2 capacitor dielectrics, and
a third sub-capacitor (C 3 ), wherein
a first C 3 plate is served by the HV gate electrode,
a second C 3 plate is served by metal lines of the second group in a first metal level (M 1 ) of the ILD layers, and
a C 3 capacitor dielectric is served by a first via level dielectric below M 1 and above the HV gate electrode;

a first capacitor terminal coupled to first capacitor plates of C 1 , C 2 and C 3 ; and
a second capacitor terminal coupled to second capacitor plates of C 1 , C 2 and C 3 .

2. The NVM charge pump capacitor of claim 1 wherein the first capacitor terminal is a positive terminal and the second capacitor terminal is a negative terminal.

3. The NVM charge pump capacitor of claim 1 wherein the HV gate enables the capacitor to function as a NVM charge pump.

4. The NVM charge pump capacitor of claim 1 wherein the BEOL vertical capacitor comprises a lower portion and an upper portion, wherein the lower portion comprises first to fourth metal levels and the upper portion comprises at least the fifth metal level.

5. The NVM charge pump capacitor of claim 4 wherein the lower portion comprises a plurality of metal lines in each metal level and the metal lines are arranged into the alternating first and second groups, wherein the first group of metal lines is connected at a first end of the lines while the second group of metal lines is connected at a second end of the lines.

6. The NVM charge pump capacitor of claim 5 wherein the lines in a metal level are coupled to lines of adjacent metal level by interconnections in a via level in between adjacent metal levels.

7. The NVM charge pump capacitor of claim 6 wherein the interconnections in the via level comprises via contacts, via bars or a combination thereof.

8. The NVM charge pump capacitor of claim 7 wherein the via contacts or via bars are arranged as groups of vias, aligned or staggered.

9. The NVM charge pump capacitor of claim 1 wherein the first capacitor terminal is coupled to the HV gate of the HV MOS capacitor and the second capacitor terminal is coupled to the substrate in the capacitor region.

10. A non-volatile memory (NVM) charge pump comprising:
a pump circuit; and
a high voltage (HV) pump capacitor, wherein the HV pump capacitor comprises
a substrate including a capacitor region in which the HV capacitor is disposed, the HV capacitor includes
a first sub-capacitor (C 1 ), the first sub-capacitor comprises a HV metal oxide semiconductor (MOS) capacitor which includes a HV gate on the substrate, the HV gate includes a HV gate electrode over a HV gate dielectric, wherein
a first C 1 plate is served by the HV gate electrode,
a second C 1 plate is served by the substrate of the capacitor region, and
a C 1 capacitor dielectric is served by the HV gate dielectric,

a second sub-capacitor (C 2 ), the second sub-capacitor comprises a back-end-of-line (BEOL) vertical capacitor disposed in ILD layers with metal levels and via levels, wherein a plurality of metal lines are disposed in the metal levels, the metal lines of a metal level are grouped in alternating first and second groups, the first group serves as first C 2 plates and second group serves as second C 2 plates and the dielectric layers between the first and second groups serve as C 2 capacitor dielectrics,
a third sub-capacitor (C 3 ), wherein
a first C 3 plate is served by the HV gate electrode,
a second C 3 plate is served by metal lines of the second group in a first metal level (M 1 ) of the ILD layers, and
a C 3 capacitor dielectric is formed by a first via level dielectric below M 1 and above the HV gate electrode,

a first capacitor terminal coupled to first capacitor plates of C 1 , C 2 and C 3 , and
a second capacitor terminal coupled to second capacitor plates of C 1 , C 2 and C 3 .

11. The NVM charge pump of claim 10 wherein the first capacitor terminal is coupled to the HV gate of the HV MOS capacitor and the second capacitor terminal is coupled to the substrate in the capacitor region.

12. The NVM charge pump of claim 11 wherein the first capacitor terminal is a positive terminal and the second capacitor terminal is a negative terminal.

13. The NVM charge pump of claim 11 wherein the HV gate of the HV MOS capacitor enables the capacitor to function as the NVM charge pump.

14. A non-volatile memory (NVM) charge pump capacitor comprising:
a substrate including a capacitor region in which the capacitor is disposed, wherein the capacitor includes
a first sub-capacitor (C 1 ), the first sub-capacitor comprises a high voltage (HV) metal oxide

semiconductor (MOS) capacitor,
a second sub-capacitor (C 2 ), the second sub-capacitor comprises a back-end-of line (BEOL) vertical capacitor disposed in interlevel dielectric (ILD) layers with metal levels and via levels over the substrate, and
a third sub-capacitor (C 3 ), the third sub-capacitor is disposed in between C 1 and C 2 , a first C 3 plate is served by a HV gate electrode of the HV MOS capacitor, a second C 3 plate is served by one group of metal lines in the lowest metal level of the ILD layers and a C 3 capacitor dielectric is formed by a dielectric layer of the ILD layers above the HV gate electrode.

15. The NVM charge pump capacitor of claim 14 wherein the BEOL vertical capacitor comprises a lower portion and an upper portion, wherein the lower portion comprises first to fourth metal levels and the upper portion comprises at least the fifth metal level.

16. The NVM charge pump capacitor of claim 15 , wherein metal lines in a metal level are coupled to metal lines of adjacent metal level by interconnections in a via level in between adjacent metal levels and wherein the interconnections in the via level comprise via contacts, via bars or a combination thereof and wherein the via contacts or via bars are arranged as groups of vias, aligned or staggered.

17. The NVM charge pump capacitor of claim 16 wherein alternating first and second metal lines in a metal level form first and second plates of a capacitor in the lower or upper portion of the BEOL vertical capacitor.

18. The NVM charge pump capacitor of claim 14 wherein the first, second and third sub-capacitors are coupled in parallel.

19. The NVM charge pump capacitor of claim 18 wherein each of the first, second and third sub-capacitors comprises first and second terminals, wherein th

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Luo Laiqiang
• Cai Xinshu
• Shum Danny
• Zhang Fan
• Lim Khee Yong
• Tan Juan Boon
• Zhang Shaoqiang

Classifications

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10D84/212

  of only capacitors · CPC title

• H10D1/716

  having vertical extensions · CPC title

• H10D1/714

  having horizontal extensions · CPC title

• H10D1/047

  of conductor-insulator-semiconductor capacitors, e.g. trench capacitors · CPC title