Transistor, heat sink structure thereof and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9520338-B2
Application number	US-201314653693-A
Country	US
Kind code	B2
Filing date	Aug 23, 2013
Priority date	Dec 19, 2012
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.

First claim

What is claimed is:

1. A transistor, comprising: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device comprises a semiconductor compound layer ( 2 ), a metal layer ( 3 ), a heat conducting layer ( 4 ), a thermocouple heat conducting device and a heat sink layer ( 9 ), the semiconductor compound layer ( 2 ) is grown on the semiconductor growth substrate, the metal layer ( 3 ) is grown on the semiconductor compound layer ( 2 ), the heat conducting layer ( 4 ) is grown on the metal layer ( 3 ), the thermocouple heat conducting device is grown on the heat conducting layer ( 4 ), and the heat sink layer ( 9 ) is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer ( 4 ); and the thermocouple heat conducting device may further contain power supply arms ( 5 ) which are grown on the heat conducting layer ( 4 ) and are electrically connected with the thermocouple heat conducting device;
wherein the thermocouple heat conducting device comprises groups of N type thermocouples and P type thermocouples, multiple channels ( 11 ) arranged in sequence are set on the metal layer ( 3 ), the openings of the channels are located on the opposite side of the bonding surface of the metal layer ( 3 ) and the semiconductor compound layer ( 2 ), the heat conducting layer ( 4 ) is grown at the bottom of each channel, multiple groups of N type thermocouples and P type thermocouples are grown on the heat conducting layer ( 4 ) along the channels ( 11 ), the N type thermocouples and the P type thermocouples in each group are electrically connected with each other, the N type thermocouple and the P type thermocouple in adjacent groups are electrically connected with each other to form a path of N type thermocouple to P type thermocouple to N type thermocouple, and the power supply arms ( 5 ) are electrically connected with the N type thermocouple at one end of each channel ( 11 ) and the P type thermocouple at the other end of that channel.

2. The transistor according to claim 1 , wherein the thermocouple heat conducting device may further comprise first power supply electrodes ( 6 ) and second power supply electrodes ( 8 ), the first power supply electrodes ( 6 ) are grown at the tops of the N type thermocouple and the P type thermocouple in the adjacent groups on the heat conducting layer ( 4 ) in the channels ( 11 ) and in the position between them and are electrically connected with the N type thermocouple and the P type thermocouple in the adjacent groups; and the second power supply electrodes ( 8 ) are grown at the bottoms of the N type thermocouple and the P type thermocouple in each group and in the position between them and are electrically connected with the N type thermocouple and the P type thermocouple in each group.

3. The transistor according to claim 2 , wherein the thermocouple heat conducting device further comprise a temperature detection point ( 10 ) which is grown on the heat conducting layer ( 4 ) on the metal layer ( 3 ).

4. The transistor according to claim 1 , wherein the thermocouple heat conducting device further comprise a temperature detection point ( 10 ) which is grown on the heat conducting layer ( 4 ) on the metal layer ( 3 ).

5. A heat sink structure of a transistor, comprising: a printed circuit board, a heat fin substrate and a transistor, wherein the printed circuit board is bonded on the heat fin substrate, the transistor is connected with the printed circuit board and comprises a semiconductor growth substrate and a semiconductor thermoelectric effect device, the semiconductor thermoelectric effect device comprises a semiconductor compound layer ( 2 ), a metal layer ( 3 ), a heat conducting layer ( 4 ), a thermocouple heat conducting device and a heat sink layer ( 9 ), the semiconductor compound layer ( 2 ) is grown on the semiconductor growth substrate, the metal layer ( 3 ) is grown on the semiconductor compound layer ( 2 ), the heat conducting layer ( 4 ) is grown on the metal layer ( 3 ), the thermocouple heat conducting device is grown on the heat conducting layer ( 4 ), and the heat sink layer ( 9 ) is grown on the other side of the thermocouple heat conducting device opposite to the heat conducting layer ( 4 ), the metal layer ( 3 ) of the transistor is welded with the heat fin on the heat fin substrate, the heat sink layer ( 9 ) is contacted with the heat fin, and the thermocouple heat conducting device may further contain power supply arms ( 5 ) which are grown on the heat conducting layer ( 4 ) and are electrically connected with the thermocouple heat conducting device.

6. The heat sink structure of a transistor according to claim 5 , wherein the thermocouple heat conducting device comprises groups of N type thermocouples and P type thermocouples, multiple channels ( 11 ) arranged in sequence are set on the metal layer ( 3 ), the openings of the channels ( 11 ) are located on the opposite side of the bonding surface of the metal layer ( 3 ) and the semiconductor compound layer ( 2 ), the heat conducting layer ( 4 ) is grown at the bottom of each channel ( 11 ), multiple groups of N type thermocouples and P type thermocouples are grown on the heat conducting layer ( 4 ) along the channels, the N type thermocouples and the P type thermocouples in each group are electrically connected with each other, the N type thermocouple and the P type thermocouple in adjacent groups are electrically connected with each other to form a path of N type thermocouple to P type thermocouple to N type thermocouple, and the power supply arms ( 5 ) are electrically connected with the N type thermocouple at one end of each channel ( 11 ) and the P type thermocouple at the other end of that channel ( 11 ).

7. The heat sink structure of a transistor according to claim 6 , wherein the thermocouple device further comprise first power supply electrodes ( 6 ) and second power supply electrodes ( 8 ), wherein the first power supply electrodes ( 6 ) are grown at the tops of the N type thermocouple and the P type thermocouple in the adjacent groups on the heat conducting layer ( 4 ) in the channels ( 11 ) and in the position between them and are electrically connected with the N type thermocouple and the P type thermocouple in the adjacent groups; and the second power supply electrodes ( 8 ) are grown at the bottoms of the N type thermocouple and the P type thermocouple in each group and in the position between them and are electrically connected with the N type thermocouple and the P type thermocouple in each group.

8. The heat sink structure of a transistor according to claim 7 , further comprising a direct current power supply device and a temperature detection and control chip, wherein the thermocouple heat conducting device may further comprise a temperature detection point ( 10 ) which is grown on the heating conducting layer ( 4 ) on the metal layer ( 3 ), and the temperature detection and control chip is connected with the temperature detection point ( 10 ) and the direct current power supply device respectively.

9. The heat sink structure of a transistor according to claim 6 , further comprising a direct current power supply device and a temperature detection and control chip, wherein the thermocouple heat conducting device may further comprise a temperature detection point ( 10 ) which is grown on the heating conducting layer ( 4 ) on the metal layer ( 3 ), and the temperature detection and control chip is connected with the temperature detection point ( 10 ) and the direct current power supply device respectively.

10. The heat sink structure of a transistor according to claim 5 , further comprising a direct c

Assignees

• Zte Corp

Inventors

• Wang Dapeng
• Zhao Zhiyong
• Zeng Wu
• Mu Xuelu
• Zong Baiqing
• Cui Yijun

Classifications

• H10W70/658

  for devices provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W40/226

  characterised by projecting parts, e.g. fins to increase surface area (leadframes for cooling H10W70/461) · CPC title

• H10W40/22

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title

• H10W40/00

  Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title