Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems

Patent metadata

Field	Value
Publication number	US-9520295-B2
Application number	US-201514612750-A
Country	US
Kind code	B2
Filing date	Feb 3, 2015
Priority date	Feb 3, 2015
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.

First claim

What is claimed is:

1. A method for depositing a metal-doped amorphous carbon hardmask film, comprising:
arranging a substrate on a pedestal in a processing chamber;
supplying a carrier gas to the processing chamber;
supplying a hydrocarbon precursor gas to the processing chamber;
supplying a metal-based precursor gas to the processing chamber;
providing, to the pedestal, first RF power at a first frequency;
providing, to the pedestal, second RF power at a second frequency less than the first frequency;
one of creating plasma in or supplying plasma to the processing chamber; and
depositing a metal-doped amorphous carbon hardmask film on the substrate, wherein the carbon hardmask film includes metal carbide.

2. The method of claim 1 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.

3. The method of claim 1 , wherein the metal-based precursor gas comprises a metal halide precursor gas.

4. The method of claim 3 wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl C , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.

5. The method of claim 1 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.

6. The method of claim 1 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.

7. The method of claim 1 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.

8. The method of claim 1 , wherein the hydrocarbon precursor gas comprises C x H y , wherein x is an integer from 2 to 10 and y is an integer from 2 to 24.

9. The method of claim 1 , wherein the hydrocarbon precursor gas is selected from a group consisting of methane, acetylene, ethylene, propylene, butane, cyclohexane, benzene and toluene.

10. The method of claim 1 , wherein the metal-based precursor gas comprises tungsten hexafluoride, the hydrocarbon precursor gas comprises methane and the carrier gas comprises molecular hydrogen.

11. A method for depositing a metal-doped amorphous silicon hardmask film, comprising:
arranging a substrate in a processing chamber;
supplying a carrier gas to the processing chamber;
supplying a silicon precursor gas to the processing chamber;
supplying a metal-based precursor gas to the processing chamber;
one of creating plasma in or supplying plasma to the processing chamber; and
depositing a metal-doped amorphous silicon hardmask film on the substrate.

12. The method of claim 11 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.

13. The method of claim 11 , wherein the metal-based precursor gas comprises a metal halide precursor gas.

14. The method of claim 13 , wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl c , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.

15. The method of claim 11 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.

16. The method of claim 11 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.

17. The method of claim 11 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.

18. The method of claim 11 , wherein the silicon precursor gas is selected from a group consisting of silane and tetraethylorthosilicate.

19. A substrate processing system for depositing a metal-doped amorphous carbon hardmask film, comprising:
a processing chamber including a substrate support configured to support a substrate;
a gas supply system configured to selectively supply process gas to the processing chamber;
a plasma generator configured to selectively create plasma in or supply plasma to the processing chamber;
a controller configured to control the gas supply system and the plasma generator and configured to:
supply a carrier gas to the processing chamber;
supply a hydrocarbon precursor gas to the processing chamber;
supply a metal-based precursor gas to the processing chamber;
provide, to the substrate support, first RF power at a first frequency;
provide, to the substrate support, second RF power at a second frequency less than the first frequency;
control the plasma generator to create plasma in or supply plasma to the processing chamber; and
deposit a metal-doped amorphous carbon hardmask film on the substrate, wherein the carbon hardmask film includes metal carbide.

20. The substrate processing system of claim 19 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.

21. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises a metal halide precursor gas.

22. The substrate processing system of claim 21 , wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl c , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.

23. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.

24. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.

25. The substrate processing system of claim 19 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.

26. The substrate processing system of claim 19 , wherein the hydrocarbon precursor gas comprises C x H y , wherein x is an integer from 2 to 10 and y is an integer from 2 to 24.

27. The substrate processing system of claim 19 , wherein the hydrocarbon precursor gas is selected from a group consisting of methane, acetylene, ethylene, propylene, butane, cyclohexane, benzene and toluene.

28. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises tungsten hexafluoride, the hydrocarbon precursor gas comprises methane and the carrier gas comprises molecular hydrogen.

29. A substrate processing system for depositing a metal-doped amorphous silicon hardmask film, comprising:
a processing chamber including a substrate support configured to support a substrate;
a gas supply system configured to selectively supply process gas to the processing chamber;
a plasma generator configured to selectively create plasma in or supply plasma to the processing chamber;
a controller configured to control the gas supply system and the plasma generator and configured to:
supply a carrier gas to the processing chamber;
supply a silicon precursor gas to the processing chamber;
supply a metal-based precursor gas to the processing chamber;
control the plasma generator to create plasma in or supply plasma to the processing chamber; and
deposit a metal-doped amorphous silicon hardmask film on the substrate.

Assignees

• Lam Res Corp

Inventors

• Shaikh Fayaz
• Reddy Sirish
• Hollister Alice

Classifications

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/416

  of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10P76/00 Primary

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title