Static electricity protection circuit, electro-optic device and electronic device

Patent metadata

Field	Value
Publication number	US-9515064-B2
Application number	US-201414314808-A
Country	US
Kind code	B2
Filing date	Jun 25, 2014
Priority date	Jul 1, 2013
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

In a static electricity protection circuit according to the invention, a first wiring is electrically connected to a drain of a first p-type transistor and a gate and a source of a first n-type transistor; a second wiring is electrically connected to a gate and a source of the first p-type transistor, a drain of the first n-type transistor, a drain of a second p-type transistor and a gate and a source of a second n-type transistor; and a third wiring is electrically connected to a gate and a source of the second p-type transistor and a drain of the second n-type transistor.

First claim

What is claimed is:

1. A static electricity protection device comprising:
a first p-type transistor;
a first n-type transistor;
a second p-type transistor;
a second n-type transistor;
a low electric potential wiring supplied with a first electric potential;
a signal wiring supplied with a second electric potential higher than the first electric potential; and
a high electric potential wiring supplied with a third electric potential higher than both the first electric potential and the second electric potential,
wherein
the first electric potential is supplied to one of a source and a drain of the first p-type transistor, a gate of the first n-type transistor, and one of a source and a drain of the first n-type transistor, through the low electric potential wiring,
the second electric potential is supplied to a gate of the first p-type transistor, the other one of the source and the drain of the first p-type transistor, the other one of the source and the drain of the first n-type transistor, one of a source and a drain of the second p-type transistor, a gate of the second n-type transistor, and one of a source and a drain of the second n-type transistor, through the signal wiring,
the third electric potential is supplied to a gate of the second p-type transistor, the other one of the source and the drain of the second p-type transistor and the other one of the source and the drain of the second n-type transistor, through the high electric potential wiring, and
the signal wiring is disposed between the low electric potential wiring and the high electric potential wiring.

2. The static electricity protection device according to claim 1 , wherein an amount of capacitance of the low electric potential wiring and an amount of capacitance of the high electric potential wiring are each larger than an amount of capacitance of the signal wiring.

3. An electro-optic device comprising the static electricity protection device according to claim 1 .

4. An electronic device comprising the static electricity protection device according to claim 1 .

5. An electronic device comprising the electro-optic device according to claim 3 .

6. The static electricity protection device according to claim 1 , wherein the gate of the first p-type transistor is connected to the gate of the second n-type transistor as a same layer wiring.

7. The static electricity protection device according to claim 1 , wherein an on-state electric current of the first p-type transistor is the same as a current of the second p-type transistor.

8. The static electricity protection device according to claim 1 ,
wherein an on-state electric current of the first n-type transistor is the same as a current of the second n-type transistor.

9. The static electricity protection device according to claim 1 ,
wherein a channel length of the first p-type transistor is the same as a channel length of the second p-type transistor.

10. The static electricity protection device according to claim 1 ,
wherein a channel length of the first n-type transistor is the same as a channel length of the second n-type transistor.

11. A static electricity protection device comprising:
a first p-type transistor;
a first n-type transistor;
a second p-type transistor;
a second n-type transistor;
a first wiring line supplying a first electric potential;
a second wiring line supplying a data signal to a panel; and
a third wiring line supplying a second electric potential higher than the first electric potential,
wherein
the first p-type transistor is disposed between the first wiring line and the second wiring line, one of a source and a drain of the first p-type transistor and a gate of the first p-type transistor are connected to the second wiring line, and the other one of the source and the drain of the first p-type transistor is connected to the first wiring line;
the first n-type transistor is disposed between the first wiring line and the second wiring line, one of a source and a drain of the first n-type transistor and a gate of the first n-type transistor are connected to the first wiring line, and the other one of the source and the drain of the first n-type transistor is connected to the second wiring line;
the second p-type transistor is disposed between the third wiring line and the second wiring line, one of a source and a drain of the second p-type transistor and a gate of the second p-type transistor are connected to the third wiring line, and the other one of the source and the drain of the second p-type transistor is connected to the second wiring line; and
the second n-type transistor disposed between the third wiring line and the second wiring line, one of a source and a drain of the second n-type transistor and a gate of the second n-type transistor are connected to the second wiring line, and the other one of the source and the drain of the second n-type transistor is connected to the third wiring line.

12. An electronic device comprising the static electricity protection device according to claim 11 .

13. An electro-optic device comprising the static electricity protection device according to claim 11 .

14. An electronic device comprising the electro-optic device according to claim 13 .

15. A static electricity protection device comprising:
a first p-type transistor;
a first n-type transistor;
a second p-type transistor;
a second n-type transistor;
a low electric potential wiring supplied with a first electric potential;
a signal wiring supplied with a second electric potential higher than the first electric potential; and
a high electric potential wiring supplied with a third electric potential higher than both the first electric potential and the second electric potential,
wherein
the first p-type transistor is disposed between the low electric potential wiring and the signal wiring, one of a source and a drain of the first p-type transistor and a gate of the first p-type transistor are connected to the signal wiring, and the other one of the source and the drain of the first p-type transistor is connected to the low electric potential wiring;
the first n-type transistor is disposed between the low electric potential wiring and the signal wiring, one of a source and a drain of the first n-type transistor and a gate of the first n-type transistor are connected to the low electric potential wiring, and the other one of the source and the drain of the first n-type transistor is connected to the signal wiring;
the second p-type transistor disposed between the high electric potential wiring and the signal wiring, one of a source and a drain of the second p-type transistor and a gate of the second p-type transistor are connected to the high electric potential wiring, and the other one of the source and the drain of the second p-type transistor is connected to the signal wiring; and
the second n-type transistor disposed between the high electric potential wiring and the signal wiring, one of a source and a drain of the second n-type transistor and a gate of the second n-type transistor are connected to the signal wiring, and the other one of the source and the drain of the second n-type transistor is connected to the high electric potential wiring.

16. An electronic device comprising the static electricity protection device according to claim 15 .

17. An electro-optic device comprising the static electricity protection device according to claim 15 .

18. An electronic device comprising the electro-optic device according to claim 17 .

Assignees

• Seiko Epson Corp

Inventors

• Sokabe Hidenori
• Yoshii Masahito

Classifications

• H10D86/443

  adapted for preventing breakage, peeling or short circuiting · CPC title

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D89/811 Primary

  using FETs as protective elements · CPC title

• H01L27/1203

  Electricity · mapped topic