Power converter package with integrated output inductor

Patent metadata

Field	Value
Publication number	US-9515014-B2
Application number	US-201514855665-A
Country	US
Kind code	B2
Filing date	Sep 16, 2015
Priority date	Oct 8, 2014
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

In one implementation, a semiconductor package includes a first patterned conductive carrier including partially etched segments. The semiconductor package also includes a control FET having a control drain attached to a first partially etched segment of the first patterned conductive carrier. In addition, the semiconductor package includes a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of the first patterned conductive carrier. The semiconductor package further includes a second patterned conductive carrier having a switch node segment situated over a control source of the control FET and over a sync drain of the sync FET, as well as an inductor coupled between the switch node segment and an output segment of the second patterned conductive carrier.

First claim

The invention claimed is:

1. A semiconductor package comprising:
a first patterned conductive carrier;
a control field-effect transistor (FET) having a control drain attached to a first partially etched segment of said first patterned conductive carrier;
a synchronous (sync) FET having a sync source and a sync gate attached to respective second and third partially etched segments of said first patterned conductive carrier;
a second patterned conductive carrier having a switch node segment situated over a control source of said control FET and over a sync drain of said sync FET; and
an inductor coupled between said switch node segment and an output segment of said second patterned conductive carrier.

2. The semiconductor package of claim 1 , wherein said first, second, and third partially etched segments of said first patterned conductive carrier are substantially half-etched.

3. The semiconductor package of claim 1 , wherein said switch node segment of said second patterned conductive carrier is partially etched.

4. The semiconductor package of claim 1 , wherein said control FET, said sync FET, and said inductor form an output stage of a power converter.

5. The semiconductor package of claim 1 , wherein at least one of said first patterned conductive carrier and said second patterned conductive carrier comprises at least a portion of a lead frame.

6. The semiconductor package of claim 1 , wherein said second patterned conductive carrier comprises at least a portion of a lead frame.

7. The semiconductor package of claim 1 , wherein said control FET and said sync FET comprise silicon power FETs.

8. The semiconductor package of claim 1 , wherein said control FET and said sync FET comprise group III-Nitride FETs.

9. The semiconductor package of claim 1 , wherein said control FET and said sync FET comprise group III-Nitride high electron mobility transistors (HEMTs).

10. The semiconductor package of claim 1 , further comprising a driver integrated circuit for driving at least one of said control FET and said sync FET.

11. A semiconductor package comprising:
a first patterned conductive carrier;
a control field-effect transistor (FET) having a control drain attached to a first partially etched segment of said first patterned conductive carrier;
a synchronous (sync) FET having a sync source and a sync gate;
a second patterned conductive carrier having a switch node segment situated over a control source of said control FET and over a sync drain of said sync FET; and
an inductor coupled between said switch node segment and an output segment of said second patterned conductive carrier.

12. The semiconductor package of claim 11 , wherein said switch node segment of said second patterned conductive carrier is partially etched.

13. The semiconductor package of claim 11 , wherein said control FET, said sync FET, and said inductor form an output stage of a power converter.

14. The semiconductor package of claim 11 , wherein at least one of said first patterned conductive carrier and said second patterned conductive carrier comprises at least a portion of a lead frame.

15. The semiconductor package of claim 11 , wherein said second patterned conductive carrier comprises at least a portion of a lead frame.

16. The semiconductor package of claim 11 , wherein said control FET and said sync FET comprise silicon power FETs.

17. The semiconductor package of claim 11 , wherein said control FET and said sync FET comprise group III-Nitride FETs.

18. The semiconductor package of claim 11 , wherein said control FET and said sync FET comprise group III-Nitride high electron mobility transistors (HEMTs).

19. The semiconductor package of claim 11 , further comprising a driver integrated circuit for driving at least one of said control FET and said sync FET.

Assignees

• Infineon Technologies Americas Corp

Inventors

• Cho Eung San
• Clavette Dan

Classifications

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/5525

  comprising copper [Cu] · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/811 Primary

  Multiple chips on leadframes · CPC title