Copper filling-up method

Patent metadata

Field	Value
Publication number	US-9512534-B2
Application number	US-201313974113-A
Country	US
Kind code	B2
Filing date	Aug 23, 2013
Priority date	May 18, 2009
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

There is provided a method of well filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate in a short period of time, and the method comprises using an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide and filling copper in the non-through hole by periodic current reversal copper plating.

First claim

The invention claimed is:

1. A method of completely filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate, the method comprising carrying out periodic current reversal copper plating with an acidic copper plating bath to completely fill copper in the non-through hole without a void in the copper after filling, wherein the periodic current reversal plating is set to be repeated in the order of positive electrolysis and reverse electrolysis or in the order of positive electrolysis, reverse electrolysis, and pause, the positive electrolysis is set to take a time period of 60 to 500 msec., the reverse electrolysis is set to take a time period of 1/100 to ⅕ times the time period of the positive electrolysis, and the pause is set to take a time period of 5 to 300 msec., and wherein the acidic copper plating bath comprises a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide, the copolymer containing a diallylamine constituent unit of the general formula (I),

wherein each of R 1 and R 2 is independently a hydrogen atom or an alkyl group having 1 or 2 carbon atoms, and X − is a chlorine, a bromine or an iodine ion,
and a sulfur dioxide constituent unit of the formula (II),

2. The method of completely filling copper as recited in claim 1 , wherein the acidic copper plating bath further contains a carrier.

3. The method of completely filling copper as recited in claim 1 , wherein the substrate is a substrate comprising a silicon layer.

4. The method of completely filling copper as recited claim 1 , wherein the substrate is a substrate that is micro-contact-printing-treated in advance.

5. The method of completely filling copper as recited in claim 1 , wherein a current density during positive electrolysis in the periodic current reversal copper plating is 3.5 mA/cm 2 or more.

6. The method of completely filling copper as recited in claim 5 , wherein a current density during reverse electrolysis in the periodic current reversal copper plating is 1 to 5 times the current density during the positive electrolysis.

Assignees

• Univ Osaka Prefect Public Corp
• Nitto Boseki Co Ltd

Inventors

• Kondo Kazuo
• Saito Takeyasu
• Okamoto Naoki
• Bunya Masaru
• Takeuchi Minoru

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/052

  by treatments not introducing additional elements therein · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title