Processing a sacrificial material during manufacture of a microfabricated product

Patent metadata

Field	Value
Publication number	US-9511560-B2
Application number	US-201213446159-A
Country	US
Kind code	B2
Filing date	Apr 13, 2012
Priority date	Apr 13, 2012
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

A method for processing a sacrificial material of an intermediate microfabricated product includes forming a hydrogen-containing carbon layer on a surface of a base structure and releasing hydrogen from the hydrogen-containing carbon layer to obtain a hydrogen-released (i.e., densified) carbon layer with low shrink. The method further includes forming a structural layer on at least a portion of a surface of the hydrogen-released carbon layer, and oxidizing the hydrogen-released (densified) carbon layer to release the structural layer. In this manner, a cavity is formed between the base structure and the structural layer. The ashing of the hydrogen-released carbon layer leaves substantially no residues within the cavity of the intermediate or final microfabricated product. Further embodiments provide a method for manufacturing a microfabricated product, to an intermediate microfabricated product, and to a microfabrication equipment.

First claim

What is claimed is:

1. A method for processing a sacrificial material of an intermediate microfabricated product, the method comprising:
forming a hydrogen-containing and nitrogen-containing carbon layer as the sacrificial material on a surface of a base structure, wherein the forming occurs in a hydrocarbon-nitrogen atmosphere;
forming a structural layer on at least a portion of a surface of the hydrogen-containing and nitrogen-containing carbon layer, wherein the structural layer is a flexible membrane; and
oxidizing the hydrogen-containing and nitrogen-containing carbon layer to release the structural layer to define an air gap between the flexible membrane and the base structure.

2. The method according to claim 1 , wherein forming the hydrogen-containing and nitrogen-containing carbon layer comprises forming by at least one of:
a chemical vapor deposition,
a plasma-enhanced chemical vapor deposition,
a plasma-enhanced chemical vapor deposition with hydrogen-diluting gas added to a hydrocarbon gas used for the plasma-enhanced chemical vapor deposition,
a plasma-enhanced chemical vapor deposition at elevated temperatures up to 1200 degrees Celsius,
a plasma-enhanced chemical vapor deposition with enhanced ion-bombardment, plasma-enhanced chemical vapor deposition with tuned low pressure, and annealing after deposition.

3. The method according to claim 1 , wherein the forming the hydrogen-containing and nitrogen-containing carbon layer is performed by depositing the hydrogen-containing and nitrogen-containing carbon layer in the hydrocarbon-nitrogen atmosphere.

4. The method according to claim 1 , wherein the hydrogen-containing and nitrogen-containing carbon layer is nitrogen-doped.

5. The method according to claim 1 , wherein oxidizing the hydrogen-released carbon layer comprises performing at least one of an oxygen plasma etching, a hydrogen plasma etching, and a combined oxygen-hydrogen plasma etching.

6. The method according to claim 1 , further comprising pre-treating the surface of the base structure prior to depositing the hydrogen-containing and nitrogen-containing carbon layer, wherein pre-treating comprises at least one of: modifying a surface roughness of the base structure, modifying a surface topology of the base structure, microcleaning the surface of the base structure, performing a plasma treatment, and removing oxygen and OH groups from the surface of the base structure.

7. The method according to claim 1 , further comprising forming a carbide forming intermediate layer as an adhesion promoter prior or subsequent to the depositing of the hydrogen-containing and nitrogen-containing carbon layer.

8. The method according to claim 1 , further comprising:
forming a hard mask on at least a portion of the hydrogen-containing and nitrogen-containing carbon layer; and
patterning the hydrogen-containing and nitrogen-containing carbon layer using the hard mask.

9. The method according to claim 1 , wherein the structural layer comprises at least one of silicon, metal, and nitride.

10. The method according to claim 1 , wherein the hydrogen-containing and nitrogen-containing carbon layer has a hydrogen content of less than or equal to 50%.

11. A method for manufacturing a microfabricated product, the method comprising:
forming a hydrogen-containing and nitrogen-containing carbon layer on a surface of a base structure, the hydrogen-containing and nitrogen-containing carbon layer serving as a sacrificial layer in the manufacturing of the microfabricated product, wherein the forming occurs in a hydrocarbon-nitrogen atmosphere, and wherein the microfabricated product is an electromechanical transducer, wherein the base structure comprises a counter electrode of the electromechanical transducer and wherein the hydrogen-content of the hydrogen-containing and nitrogen-containing carbon layer is less than 50%;
forming a structural layer on at least a portion of a surface of the hydrogen-containing and nitrogen-containing carbon layer, wherein the structural layer is a flexible membrane; and
removing the hydrogen-containing and nitrogen-containing carbon layer by means of a dry etching process to define an air gap between the flexible membrane and the counter electrode.

12. The method according to claim 11 , wherein forming the hydrogen-containing and nitrogen-containing carbon layer comprises performing a chemical vapor deposition or a plasma-enhanced chemical vapor deposition.

13. The method according to claim 11 , wherein forming the hydrogen-containing and nitrogen-containing carbon layer is performed by depositing the hydrogen-containing and nitrogen-containing carbon layer in the hydrocarbon-nitrogen atmosphere.

14. The method according to claim 11 , wherein the hydrogen-containing and nitrogen-containing carbon layer is nitrogen-doped.

15. The method according to claim 11 , further comprising pre-treating the surface of the base structure prior to depositing the hydrogen-containing and nitrogen-containing carbon layer, wherein the pre-treating comprises at least one of modifying a surface roughness of the base structure, modifying a surface topology of the base structure, microcleaning the surface of the base structure, and removing oxygen and OH groups from the surface of the base structure.

16. The method according to claim 11 , further comprising depositing a silicon-based intermediate layer as an adhesion promoter prior or subsequent to the depositing of the hydrogen-containing and nitrogen-containing carbon layer.

Assignees

• Denifl Guenter
• Maurer Daniel
• Grille Thomas
• Hirschler Joachim
• Kahn Markus
• Infineon Technologies Ag

Inventors

• Denifl Guenter
• Maurer Daniel
• Grille Thomas
• Hirschler Joachim
• Kahn Markus

Classifications

• H10P50/283

  by chemical means · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/26 Primary

  Deposition of carbon only · CPC title

• Y10T428/24562

  Interlaminar spaces · CPC title

• B32B9/04

  comprising such {particular} substance as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00)} · CPC title