Imaging element and imaging device
US-2024388815-A1 · Nov 21, 2024 · US
US9105547B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9105547-B2 |
| Application number | US-201414289213-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 28, 2014 |
| Priority date | Oct 3, 2007 |
| Publication date | Aug 11, 2015 |
| Grant date | Aug 11, 2015 |
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Official abstract text for this publication.
A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a solid state imaging device having a sensor section formed in a semiconductor substrate in order to convert incident light into an electric signal, the method comprising the step of: forming a layer having negative fixed electric charges that is formed on a light incident side of the sensor section in order to form a hole accumulation layer on a light receiving surface of the sensor section. 2. The method of…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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