Transparent contacts for stacked compound photovoltaic cells

Patent metadata

Field	Value
Publication number	US-9508881-B2
Application number	US-201213649238-A
Country	US
Kind code	B2
Filing date	Oct 11, 2012
Priority date	Oct 11, 2012
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

First claim

What is claimed is:

1. A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell comprising:
a first photovoltaic cell over a second photovoltaic cell, wherein the first photovoltaic cell comprises:
a first semiconductor junction over a first contact layer, wherein the first semiconductor junction comprises InGaP, and wherein the first contact layer comprises InGaP; and
a back surface field (BSF) layer over the first contact layer, wherein the BSF layer comprises AlGaInP, wherein the BSF layer is in physical contact with the first contact layer;

wherein the second photovoltaic cell comprises:
a second semiconductor junction, wherein the second semiconductor junction has a bandgap that is less than a bandgap of the first semiconductor junction; and

an electrical isolation layer between the first photovoltaic cell and the second photovoltaic cell.

2. The MEM-PV cell of claim 1 , further comprising a window layer over the first semiconductor junction.

3. The MEM-PV cell of claim 2 , wherein the window layer comprises InAlP.

4. The MEM-PV cell of claim 1 , further comprising a second contact layer over the first semiconductor junction.

5. The MEM-PV cell of claim 4 , wherein the second contact layer comprises GaAs.

6. The MEM-PV cell of claim 1 , wherein the second semiconductor junction comprises GaAs.

7. The MEM-PV cell of claim 1 , further comprising a first metal stack applied to the first contact layer, wherein the metal stack comprises AuBe/Ni/Au.

8. The MEM-PV cell of claim 4 , further comprises a second metal stack applied to the second contact layer, wherein the second metal stack comprises Au/Ge/Ni/Au.

9. A microsystems-enabled multi junction photovoltaic (MEM-PV) cell comprising:
a first photovoltaic cell over a second photovoltaic cell, wherein the first photovoltaic cell comprises:
a first semiconductor junction over a back surface field (BSF) layer; and
a first contact layer over the first semiconductor junction,

wherein the first semiconductor junction comprises InGaP and the first contact layer comprises GaAs;
wherein the second photovoltaic cell comprises:
a second semiconductor junction over a second contact layer;
a third contact layer over the second semiconductor junction;

an electrical isolation layer over the second photovoltaic cell, and
a fourth contact layer between the BSF layer and the electrical isolation layer, wherein the fourth contact layer comprises InGaP, wherein the fourth contact layer is in physical contact with the BSF layer.

10. The MEM-PV cell of claim 9 , wherein the BSF layer comprises AlGaInP.

11. The MEM-PV cell of claim 9 , further comprising a window layer between the first semiconductor junction and the first contact layer, wherein the window layer comprises InAlP.

12. The MEM-PV cell of claim 9 , wherein at least one of the second semiconductor junction or the second contact layer comprises InGaAs.

13. The MEM-PV cell of claim 9 , wherein the third contact layer comprises InAlGaAs.

14. The MEM-PV cell of claim 9 , wherein a bandgap of the second semiconductor junction is less than a bandgap of the first semiconductor junction.

15. The MEM-PV cell of claim 9 , wherein the fourth contact layer is in physical contact with the BSF layer.

Assignees

• Sandia Corp

Inventors

• Tauke-Pedretti Anna
• Cederberg Jeffrey
• Nielson Gregory N
• Okandan Murat
• Cruz-Campa Jose Luis

Classifications

• H01L31/1844

  Electricity · mapped topic

• H01L31/0693

  Electricity · mapped topic

• H01L31/0687

  Electricity · mapped topic

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/043 Primary

  Electricity · mapped topic