Semiconductor device

Patent metadata

Field	Value
Publication number	US-9508787-B2
Application number	US-201514931895-A
Country	US
Kind code	B2
Filing date	Nov 4, 2015
Priority date	Jan 23, 2015
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

Two rows of resistive bodies, first resistive body and second resistive body, having slits are provided on an input matching circuit substrate. Since a high-frequency signal flows through not only the resistive bodies but also a transmission line pattern formed in the slits, the burnout of the resistive bodies can be prevented.

First claim

What is claimed is:

1. A semiconductor device comprising:
a package;
an input electrode fixed to the package;
an input matching circuit substrate provided in the package;
a transmission line pattern formed on the input matching circuit substrate;
a first resistive body formed on the input matching circuit substrate, the first resistive body having a first slit formed therein;
a second resistive body formed on the input matching circuit substrate, the second resistive body having a second slit formed therein;
an amplifier provided in the package;
a first connecting body for electrically connecting the input electrode and the transmission line pattern; and
a second connecting body for electrically connecting the transmission line pattern and the amplifier,
wherein the transmission line pattern exists in the first slit and the second slit, and
the first resistive body and the second resistive body are located between a first connection point and a second connection point, the first connection point being a point at which the first connecting body contacts the transmission line pattern, the second connection point being a point at which the second connecting body contacts the transmission line pattern.

2. The semiconductor device according to claim 1 , wherein the transmission line pattern exists between the first resistive body and the second resistive body.

3. The semiconductor device according to claim 1 , wherein a width of the first resistive body and a width of the second resistive body are equal to each other.

4. The semiconductor device according to claim 1 , wherein a width of the first resistive body and a width of the second resistive body are different from each other.

5. The semiconductor device according to claim 1 , wherein a portion of the first resistive body on a right side of the first slit and a portion of the first resistive body on a left side of the first slit are formed to be shifted from each other, and a portion of the second resistive body on a right side of the second slit and a portion of the second resistive body on a left side of the second slit are formed to be shifted from each other.

6. The semiconductor device according to claim 1 , wherein
each portion of the first resistive body is located such that distances from the first connection point to different portions of the first resistive body are closer to each other than in the case where the first resistive body is formed in a linear shape, and
each portion of the second resistive body is located such that distances from the first connection point to different portions of the second resistive body are closer to each other than in the case where the second resistive body is formed in a linear shape.

Assignees

• Mitsubishi Electric Corp

Inventors

• Yoshioka Takaaki

Classifications

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W44/251

  for monolithic microwave integrated circuits [MMIC] · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W44/216

  Waveguides, e.g. strip lines · CPC title

• H10W44/20 Primary

  at high-frequency [HF] or radio frequency [RF] · CPC title