High frequency power amplifier

Patent metadata

Field	Value
Publication number	US-9071199-B2
Application number	US-201314095446-A
Country	US
Kind code	B2
Filing date	Dec 3, 2013
Priority date	Mar 13, 2013
Publication date	Jun 30, 2015
Grant date	Jun 30, 2015

Abstract

A high frequency power amplifier includes an FET chip, a wire connected at a first end to the FET chip, an input-side matching circuit substrate, a resistive element on the input-side matching circuit substrate and connected in series with the FET chip, a transmission portion of a conductive material on the input-side matching circuit substrate, in contact with one end of the resistive element, and connected to an input electrode, a wire connection portion of a conductive material on the input-side matching circuit substrate, in contact with a second end of the resistive element, and connected to a second end of the wire, and a shorting portion of a conductive material having a smaller width than the resistive element and on the resistive element, connecting the transmission portion to the wire connection portion.

First claim

What is claimed is:

1. A high frequency power amplifier comprising:
an FET chip;
a wire connected at a first end to said FET chip;
an input-side matching circuit substrate;
a resistive element located on said input-side matching circuit substrate and connected in series with said FET chip; and
a conductive material located on said input-side matching circuit substrate, wherein said conductive material includes
a transmission portion in contact with a first end of said resistive element and connected to an input electrode,
a wire connection portion in contact with a second end of said resistive element, and connected to a second end of said wire, and
a shorting portion having a smaller width than said resistive element, located on said resistive element, and connecting said transmission portion of said conductive material to said wire connection portion of said conductive material.

2. The high frequency power amplifier according to claim 1 , including a plurality of said shorting portions located on said resistive element.

3. The high frequency power amplifier according to claim 1 , wherein said shorting portion has a length longer than a minimum length required to connect said wire connection portion to said transmission portion.

4. The high frequency power amplifier according to claim 1 , wherein said wire connection portion has a length, as measured along a transmission direction of a high frequency signal being transmitted through said high frequency amplifier, in a range from 50 μm to 100 μm.

5. The high frequency power amplifier according to claim 1 , wherein said resistive element comprises TaN.

Assignees

• Mitsubishi Electric Corp

Inventors

• Miwa Shinichi

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/932

  Plan-view shape, i.e. in top view · CPC title

• H03F3/16 Primary

  with field-effect devices · CPC title

• H03F3/245 Primary

  with semiconductor devices only · CPC title