Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9508619-B2
Application number	US-201313912309-A
Country	US
Kind code	B2
Filing date	Jun 7, 2013
Priority date	Sep 7, 2007
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor element;
a first sealing layer covering the semiconductor element at least partly, the first sealing layer including a first fiber and a first organic resin layer;
a conductive film electrically connected with the semiconductor element with the first sealing layer interposed between the conductive film and the semiconductor element; and
a second sealing layer covering the semiconductor element, the second sealing layer including a second fiber and a second organic resin layer, wherein the semiconductor element is interposed between the first sealing layer and the second sealing layer,
wherein the first sealing layer and the second sealing layer contact with each other at least at a first portion and a second portion, the semiconductor element being located between the first portion and the second portion.

2. A semiconductor device according to claim 1 ,
wherein in the first fiber and the second fiber, warp yarns and weft yarns in each of which a plurality of single yarns of one of an organic compound and an inorganic compound are bundled are closely woven.

3. A semiconductor device according to claim 1 ,
wherein each of the first fiber and the second fiber is one of a woven fabric and a nonwoven fabric.

4. A semiconductor device according to claim 1 ,
wherein each of the first fiber and the second fiber includes one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

5. A semiconductor device according to claim 1 ,
wherein each of the first organic resin layer and the second organic resin layer includes one of a thermosetting resin, a thermoplastic resin, and a UV curable resin.

6. A semiconductor device according to claim 5 ,
wherein the thermosetting resin is one of an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, and a cyanate resin.

7. A semiconductor device according to claim 5 ,
wherein the thermoplastic resin is one of a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

8. A semiconductor device according to claim 1 ,
wherein the conductive film is an antenna formed over a base material.

9. A semiconductor device according to claim 8 ,
wherein the antenna includes at least one of silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium (Ti), and aluminum (Al).

10. A semiconductor device according to claim 1 ,
wherein the first sealing layer is bonded to the conductive film by an adhesive material.

11. A semiconductor device according to claim 1 , wherein the semiconductor element is electrically connected to the conductive film through a conductive resin.

12. A semiconductor device according to claim 1 , wherein the semiconductor element includes a thin film transistor.

13. A semiconductor device according to claim 1 ,
wherein the second sealing layer is in contact with the first sealing layer.

14. A semiconductor device comprising:
a semiconductor element including a transistor;
a first sealing layer covering the semiconductor element at least partly, the first sealing layer including a first fiber and a first organic resin layer;
an antenna electrically connected with the semiconductor element with the first sealing layer interposed between the antenna and the semiconductor element; and
a second sealing layer covering the semiconductor element, the second sealing layer including a second fiber and a second organic resin layer, wherein the semiconductor element is interposed between the first sealing layer and the second sealing layer,
wherein the first sealing layer and the second sealing layer contact with each other at least at a first portion and a second portion, the semiconductor element being located between the first portion and the second portion.

15. A semiconductor device according to claim 14 ,
wherein the first sealing layer is bonded to the antenna by an adhesive material.

16. A semiconductor device according to claim 14 , wherein the semiconductor element is electrically connected to the antenna through a conductive resin.

17. A semiconductor device according to claim 14 ,
wherein the first fiber includes a carbon fiber.

18. A semiconductor device according to claim 14 ,
wherein the second fiber includes a carbon fiber.

19. A semiconductor device according to claim 14 ,
wherein each of the first organic resin layer and the second organic resin layer includes one of a thermosetting resin, a thermoplastic resin, and a UV curable resin.

20. A semiconductor device according to claim 14 ,
wherein the antenna includes at least one of silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium (Ti), and aluminum (Al).

Assignees

• Semiconductor Energy Lab

Inventors

• Aoki Tomoyuki
• Tsurume Takuya
• Adachi Hiroki
• Horikoshi Nozomi
• Ohtani Hisashi

Classifications

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/012

  of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills · CPC title

• H10W70/695

  Organic materials · CPC title