Photoresists and methods for use thereof

Patent metadata

Field	Value
Publication number	US-9508553-B2
Application number	US-201113341359-A
Country	US
Kind code	B2
Filing date	Dec 30, 2011
Priority date	Dec 30, 2010
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

New photoresists are provided that comprise a multi-keto component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride, hafnium silicate, zirconium silicate and other inorganic surfaces.

First claim

What is claimed is:

1. A method for providing an ion-implanted semiconductor substrate comprising:
providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
wherein the chemically-amplified positive-acting photoresist composition comprises 1) a resin, 2) a photoactive component and 3) a multi-keto resin comprising as a polymerized unit at least one monomer of the following Formula (I):

where in Formula (I) R is hydrogen or optionally substituted alkyl; and X is hydrogen or a non-hydrogen substituent; and
applying ions to the substrate.

2. The method of claim 1 wherein the resin 1) comprises photoacid-labile groups.

3. The method of claim 1 wherein X is a moiety that provides a photoacid-labile group.

4. The method of claim 1 wherein the multi-keto resin comprises a polymerized unit of at least one monomer selected from the group consisting of the following monomers:

5. A coated substrate comprising:
a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises 1) a resin, 2) a photoactive component and 3) a multi-keto resin comprising as a polymerized unit at least one monomer of the following Formula (I):

where in Formula (I) R is hydrogen or optionally substituted alkyl; and X is hydrogen or a non-hydrogen substituent; and
the semiconductor wafer having applied dopant ions.

6. The substrate of claim 5 wherein X is a moiety that provides a photoacid-labile group.

7. The substrate of claim 5 wherein the multi-keto resin comprises a polymerized unit of at least one monomer selected from the group consisting of the following monomers:

8. A method for forming a photoresist relief image comprising:
(a) applying on a substrate a photoresist comprising 1) a resin, 2) a photoactive component and 3) a multi-keto resin comprising as a polymerized unit at least one monomer of the following Formula (I):

where in Formula (I) R is hydrogen or optionally substituted alkyl; and X is hydrogen or a non-hydrogen substituent; and
(b) exposing the photoresist to patterned activating radiation.

9. The method of claim 8 wherein the patterned activating radiation has a wavelength of 193 nm.

10. The photoresist composition of claim 9 wherein the resin 1) comprises photoacid-labile groups.

11. The method of claim 8 wherein the photoresist is applied on an inorganic surface.

12. The method of claim 8 wherein X is a moiety that provides a photoacid-labile group.

13. The method of claim 8 wherein the multi-keto resin comprises a polymerized unit of at least one monomer selected from the group consisting of the following monomers:

14. A photoresist composition comprising: 1) a resin, 2) a photoactive component and 3) a multi-keto resin comprising as a polymerized unit at least one monomer of the following Formula (I):

where in Formula (I) R is hydrogen or optionally substituted alkyl; and X is hydrogen or a non-hydrogen substituent.

15. The photoresist composition of claim 14 wherein X is a moiety that provides a photoacid-labile group.

16. The photoresist composition of claim 14 wherein the multi-keto resin comprises a polymerized unit of at least one monomer selected from the group consisting of the following monomers:

Assignees

• Pohlers Gerd
• Caporale Stefan J
• Rohm & Haas Elect Mat

Inventors

• Pohlers Gerd
• Caporale Stefan J

Classifications

• H10P30/22 Primary

  using masks · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• H01L21/266 Primary

  Electricity · mapped topic

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title