Atomic-layer deposition apparatus using compound gas jet

Patent metadata

Field	Value
Publication number	US-9506147-B2
Application number	US-201514621426-A
Country	US
Kind code	B2
Filing date	Feb 13, 2015
Priority date	Feb 13, 2015
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

An apparatus for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes a chamber having an atmosphere and a moveable substrate. A stationary support is located in the chamber that supports the moveable substrate. A pressurized-fluid source provides a compound fluid flow including an inert fluid surrounding a reactive fluid that flows simultaneously through the stationary support and impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.

First claim

The invention claimed is:

1. An apparatus for depositing a thin film on a substrate using atomic-layer deposition, comprising:
a chamber having an atmosphere;
a moveable substrate;
a stationary support located in the chamber proximate to the moveable substrate; and
a compound fluid flow forming apparatus that provides a collinear compound fluid flow including an inert fluid surrounding a reactive fluid that flow simultaneously through the stationary support and impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the reactive fluid in the collinear compound fluid flow to deposit a thin film on the moveable substrate;
wherein the inert fluid flow and the reactive fluid flow in the collinear compound fluid flow are compositionally segregated and travel along substantially parallel paths such that a chemical composition of the fluid in the collinear compound fluid flow varies within a cross-section of the collinear compound fluid flow;
wherein the moveable substrate undergoes fluidic levitation due to a Bernoulli lift force caused by the impingement of the collinear compound fluid flow onto the moveable substrate; and
wherein the moveable substrate has a levitation stabilizing structure attached to and protruding from the moveable substrate that defines an enclosed interior impingement area of the moveable substrate into which the collinear compound fluid flow impinges.

2. The apparatus of claim 1 , wherein the chamber atmosphere is at a pressure substantially equal to the air pressure outside the chamber.

3. The apparatus of claim 1 , wherein the chamber atmosphere has a pressure greater than 1 psig.

4. The apparatus of claim 1 , wherein the collinear compound fluid flow is a collimated fluid flow.

5. The apparatus of claim 1 , wherein the reactive fluid is surrounded in one dimension by the inert fluid.

6. The apparatus of claim 1 , wherein the collinear compound fluid flow is a columnar compound fluid jet.

7. The apparatus of claim 6 , wherein the columnar compound fluid jet is a co-axial fluid jet.

8. The apparatus of claim 1 , wherein the collinear compound fluid flow includes a third fluid and the third fluid is separated in at least one dimension from the reactive fluid.

9. The apparatus of claim 8 , wherein the third fluid is reactive.

10. The apparatus of claim 8 , wherein the third fluid is a cleaning fluid.

11. The apparatus of claim 8 , wherein the third fluid is surrounded by the inert fluid.

12. The apparatus of claim 1 , wherein the compound fluid flow forming apparatus includes a plurality of axially parallel tubes.

13. The apparatus of claim 12 , wherein the plurality of axially parallel tubes have a common axis and the axially parallel tubes are concentric.

14. The apparatus of claim 1 , wherein the direction of the collinear compound fluid flow is orthogonal to the substrate.

15. The apparatus of claim 1 , wherein the stationary support includes a plurality of fluid collimating conduits through which the collinear compound fluid flow.

16. The apparatus of claim 1 , wherein the stationary support includes a plurality of fluid collimating conduits through which the compound fluid flows, wherein the plurality of fluid collimating conduits is tilted with respect to the substrate such that the direction of the collinear compound fluid flow is tilted with respect to the substrate.

17. The apparatus of claim 1 , wherein the stationary support includes a plurality of fluid collimating conduits through which the compound fluid flows, wherein two of the plurality of fluid collimating conduits are tilted with respect to the substrate such that the direction of the collinear compound fluid flow through the tilted fluid collimating conduits is tilted with respect to the substrate and one of the plurality of fluid collimating conduits is orthogonal to the substrate such that the direction of the collinear compound fluid flow through the orthogonal fluid collimating conduits is orthogonal to the substrate.

18. The apparatus of claim 1 , wherein the stationary support includes a plurality of fluid collimating conduits, wherein two of the plurality of fluid collimating conduits are tilted with respect to the substrate and through which an inert fluid flows and one of the plurality of fluid collimating conduits is orthogonal to the substrate and through which the compound fluid flows.

19. The apparatus of claim 18 , wherein the tilted fluid collimating conduits are arranged symmetrically around the orthogonal fluid collimating conduit.

Assignees

• Eastman Kodak Co

Inventors

• Sieber Kurt D
• Ng Kam Chuen
• Cok Ronald Steven

Classifications

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• C23C16/453

  passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD (C23C16/513 takes precedence; for flame or plasma spraying of coating material in the molten state C23C4/00) · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title