Semiconductor device manufacturing method and semiconductor device manufactured using the same
US-2024395745-A1 · Nov 28, 2024 · US
US9502453B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502453-B2 |
| Application number | US-201313829126-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2013 |
| Priority date | Mar 14, 2013 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Official abstract text for this publication.
A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of image sensors. A color filter including a plurality of color filter segments is disposed above the semiconductor substrate. Each of the color filter segments corresponds to one of the image sensors. Further, a plurality of partitions is disposed between the color filter segments. Each of the partitions is disposed between any two adjacent color filter segments. The partition has a height smaller than the height of the color filter segment, wherein the height of the partition is based on the bottom of the color filter segment to the top of the partition, and the height of the color filter segment is based on the bottom of the color filter segment to the top of the color filter segment.
Opening claim text (preview).
What is claimed is: 1. A solid-state imaging device, comprising: a color filter including a first color filter segment having a first height measured from a bottom surface of the first color filter segment to a top surface of the first color filter segment; and a second color filter segment having a second height measured from a bottom surface of the second color filter segment to a top surface of the second color filter segment; a partition disposed between the first and second…
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