Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

Patent metadata

Field	Value
Publication number	US-9502450-B2
Application number	US-201214001652-A
Country	US
Kind code	B2
Filing date	Feb 23, 2012
Priority date	Mar 2, 2011
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12 , an insulating film 21 forms an embedded element separating unit 19 . The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30 , within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

First claim

The invention claimed is:

1. A solid-state imaging device comprising:
a substrate;
first and second photoelectric converters included in the substrate;
a groove portion disposed between and laterally separating the first and second photoelectric converters in a depth direction in the substrate; and
an element separating unit provided in the groove portion and formed such that a portion of the element separating unit contacts a well layer at a side opposite from a light-input side of the substrate, the element separating unit including an insulating film having a fixed charge and coating a portion of a semiconductive, inwardly facing inner wall face of the groove portion, the portion of the semiconductive, inwardly facing inner wall face extending in a depth direction of the groove portion, the element separating unit contacting a laterally central portion of the well layer along a surface of the well layer, the surface of the well layer substantially extending parallel to a main light input side surface of the substrate.

2. The solid-state imaging device according to claim 1 , wherein the element separating unit is formed in a grid shape so as to surround each photoelectric converter.

3. The solid-state imaging device according to claim 1 , wherein a light-blocking layer is further formed within the groove portion.

4. The solid-state imaging device according to claim 1 , wherein a pixel transistor on a front face side of the substrate is formed on the well layer.

5. The solid-state imaging device according to claim 1 , wherein a portion of the element separating unit is configured to pass through the substrate.

6. The solid-state imaging device according to claim 1 , wherein the portion of the element separating unit is configured to pass through the substrate, and wherein a light-blocking layer passes through the substrate and is connected to a wiring layer formed on a front face side of the substrate.

7. The solid-state imaging device according to claim 1 , wherein a light-blocking layer is formed on a back face side of the substrate, and is electrically connected to a light-blocking film configured to block light in an interface region between adjacent photoelectric converters.

8. The solid-state imaging device according to claim 1 , wherein the insulating film having the fixed charge is formed within the groove portion while being formed to coat a back face of the substrate.

9. A method of manufacturing an imaging device, comprising:
forming first and second photoelectric converters in a substrate;
forming a groove portion disposed laterally between the first and second photoelectric converters and extending in a depth direction in the substrate; and
forming an element separating unit in the groove portion, the element separating unit including an insulating film having a fixed charge, the insulating film coating a portion of a semiconductive, inwardly facing inner wall face of the groove portion, the portion of the semiconductive, inwardly facing inner wall face extending in a depth direction of the groove portion, the insulating film contacting a laterally central portion of a well layer along a surface of the well layer that is substantially extended parallel to a main light-input-side surface of said substrate.

10. The method of manufacturing according to claim 9 , wherein the element separating unit is formed in a grid shape so as to surround each photoelectric converter.

Assignees

• Yanagita Takeshi
• Oshiyama Itaru
• Enomoto Takayuki
• Ikeda Harumi
• Izawa Shinichiro
• Yamamoto Atsuhiko
• Ota Kazunobu
• Sony Corp

Inventors

• Yanagita Takeshi
• Oshiyama Itaru
• Enomoto Takayuki
• Ikeda Harumi
• Izawa Shinichiro
• Yamamoto Atsuhiko
• Ota Kazunobu

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/813

  Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels · CPC title

• H10F39/805

  Coatings · CPC title

• H10F39/8057

  Optical shielding · CPC title

• H10F39/807 Primary

  Pixel isolation structures · CPC title