Method of forming an interconnect structure

Patent metadata

Field	Value
Publication number	US-9502288-B2
Application number	US-201213420728-A
Country	US
Kind code	B2
Filing date	Mar 15, 2012
Priority date	Jan 7, 2010
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.

First claim

What is claimed is:

1. A method of forming an interconnect structure comprising:
providing an interconnect dielectric material having a dielectric constant of 4.0 or less, said interconnect dielectric material having opposing upper and lower surfaces, said surfaces having at least one opening that is filled with a Cu-containing material, said Cu-containing material having an exposed upper surface that is co-planar with an upper surface of said interconnect dielectric material;
forming a metal layer M directly on at least the exposed upper surface of the Cu-containing material, wherein said metal layer is composed of a metal having a higher affinity for oxygen than copper and copper oxide;
annealing to react any oxygen within the Cu-containing material with the metal layer M forming a composite M-MOx cap, wherein said composite M-MOx cap includes an upper region that is composed of said metal M and a lower region that is composed of a non-stoichiometric oxide MOx of said metal; and
forming a dielectric capping material directly on at least an upper surface of the composite M-MOx cap.

2. The method of claim 1 wherein said forming the metal layer includes a selective deposition process.

3. The method of claim 2 wherein said selective deposition process includes chemical vapor deposition, plasma enhanced chemical vapor deposition, or plasma enhanced atomic layer deposition.

4. The method of claim 1 wherein said forming the metal layer includes a non-selective deposition process.

5. The method of claim 4 wherein said non-selective deposition process comprises plating, sputtering or chemical solution deposition.

6. The method of claim 1 wherein said forming the metal layer includes selecting one of Mn, Ta, Nb, Ti, Zr, Al, Ru, Co, Zn, Fe and Sn.

7. The method of claim 1 wherein said forming the metal layer includes selecting Mn as said metal layer.

8. The method of claim 1 wherein said annealing includes thermal annealing, UV curing, a low rf power plasma treatment or a combination thereof.

9. The method of claim 1 wherein said forming the dielectric capping material includes selecting a non-oxygen containing dielectric capping material.

10. The method of claim 1 wherein said composite M-MOx cap has vertical edges that do not extend beyond vertical edges of said Cu-containing material.

Assignees

• Nguyen Son Van
• Grill Alfred
• Haigh Jr Thomas J
• Shobha Hosadurga
• Vo Tuan A
• Globalfoundries Inc

Inventors

• Nguyen Son Van
• Grill Alfred
• Haigh Jr Thomas J
• Shobha Hosadurga
• Vo Tuan A

Classifications

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/055

  by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition · CPC title

• H10W20/035

  combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers · CPC title

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10W20/037 Primary

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title